Semiconductor light-emitting device

1. A semiconductor light emitting device, comprising:

a semiconductor light emitting chip having electrodes;

a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and

conductive parts provided in the through holes for electrical communication with the electrodes,

wherein a metal is exposed on the surface of the through holes to serve as a seed for forming the conductive parts,

wherein the semiconductor light emitting device further comprises:

a heat dissipation metal layer, which is formed on a lower side of the bottom portion and has a pattern corresponding to a design pattern on the lower side of the bottom portion, wherein the lower side of the bottom portion has a third surface roughness higher than the first surface roughness.

2. The semiconductor light emitting device of claim 1 , wherein the heat dissipation metal layer is connected with the conductive parts.

3. The semiconductor light emitting device of claim 1 , further comprising:

upper metal layers, which are formed on the upper side of the bottom portion, sticking out of the through holes, and electrically bonded with the electrodes and conductive parts.

4. A semiconductor light emitting device comprising:

a semiconductor light emitting chip having electrodes;

a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and

conductive parts provided in the through holes for electrical communication with the electrodes,

wherein the conductive parts are formed by electroless plating, and the mold contains at least one LDS additive that is activated by a laser beam and serves as a seed for the electroless plating.

5. The semiconductor light emitting device of claim 4 , wherein the mold comprises a reflective layer on a side facing the semiconductor light emitting chip to reflect light emitted by the semiconductor light emitting chip.

6. A semiconductor light emitting device, comprising:

a semiconductor light emitting chip having electrodes;

a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and

conductive parts provided in the through holes for electrical communication with the electrodes,

wherein the conductive parts are formed by electroless plating, and the mold contains a first additive that is activated by a laser beam and serves as a seed for the electroless plating and a second additive that is activated by a laser beam and serves as a seed for the electroless plating, with the second additive having better heat dissipation performance than the first additive against heat generated from the semiconductor light emitting chip.

7. The semiconductor light emitting device of claim 6 , wherein the first additive comprises at least one selected from the group consisting of: Pd-based heavy metal complexes and metal oxides, metal oxide-coated fillers, CuO·Cr 2 O 3 spinel, copper salts, copper hydroxyphosphate, copper phosphate, cuprous thiocyanate, spinel-based metal oxides, CuO·Cr 2 O 3 , organometallic complexes, antimony (Sb) doped Sn oxide, and metal oxides containing Cu, Zn, Sn, Mg, Al, Au, Ag, Ni, Cr, Fe, V, Co, or Mn.

8. The semiconductor light emitting device of claim 6 , wherein the second additive comprises at least one selected from the group consisting of: AlN, AlC, Al 2 O 3 , AlON, BN, MgSiN 2 , Si 3 N 4 , SiC, graphite, graphene, carbon fiber, ZnO, CaO, or MgO.

9. A semiconductor light emitting device comprising a semiconductor light emitting chip having electrodes;

a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and

conductive parts provided in the through holes for electrical communication with the electrodes,

wherein the conductive parts are formed by electroless plating, and the mold contains a first additive that is activated by a laser beam and serves as a seed for the electroless plating and a third additive that has a higher reflectance than the first additive for light emitted by the semiconductor light emitting chip.

10. The semiconductor light emitting device of claim 9 , wherein the third additive comprises at least one selected from the group consisting of: TiO 2 , ZnO, BaS, and CaCO 3 .

11. The semiconductor light emitting device of claim 9 , wherein the first additive is contained in a greater amount in the lower region of the mold than that in the upper region of the mold.

12. The semiconductor light emitting device of claim 9 , wherein the first additive comprises at least one selected from the group consisting of: Pd-based heavy metal complexes and metal oxides, metal oxide-coated fillers, CuO·Cr 2 O 3 spinel, copper salts, copper hydroxyphosphate, copper phosphate, cuprous thiocyanate, spinel-based metal oxides, CuO·Cr 2 O 3 , organometallic complexes, antimony (Sb) doped Sn oxide, and metal oxides containing Cu, Zn, Sn, Mg, Al, Au, Ag, Ni, Cr, Fe, V, Co, or Mn.

13. A semiconductor light emitting device, comprising:

a semiconductor light emitting chip having electrodes;

a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and

conductive parts provided in the through holes for electrical communication with the electrodes,

wherein the mold is activated by a laser beam and serves as a seed for forming the conductive parts, with the mold containing an additive that reflects light emitted by the semiconductor light emitting chip, in an amount of at least 50 wt. %.

14. The semiconductor light emitting device of claim 13 , wherein the additive is TiO 2 .