ELECTRO-ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME

1 . An electro-acoustic resonator, comprising:

a carrier substrate,

an acoustic mirror disposed on the carrier substrate;

a bottom electrode disposed on the acoustic mirror;

a piezoelectric layer disposed on the bottom electrode;

a seed layer comprising aluminum disposed on the piezoelectric layer;

a structured silicon dioxide layer disposed on the seed layer; and

a top electrode disposed on the piezoelectric layer.

2 . The electro-acoustic resonator according to claim 1 , wherein the structured silicon dioxide layer surrounds a region in which the top electrode is disposed.

3 . The electro-acoustic resonator according to claim 1 , wherein the structured silicon dioxide layer surrounds a region in which the silicon dioxide layer is removed and in which the top electrode is disposed.

4 . The electro-acoustic resonator according to claim 1 , wherein the top electrode comprises a layer stack comprising a bottom layer of tungsten, an intermediate layer of a composition of aluminum and copper and a top layer of a metal nitride.

5 . The electro-acoustic resonator according to claim 1 , further comprising a metal overlap layer disposed on the structured silicon dioxide layer and extending underneath a portion of the top electrode layer, wherein the metal overlap layer is disposed between the top electrode and the piezoelectric layer at said portion.

6 . The electro-acoustic resonator according to claim 5 , wherein the metal overlap layer comprises a layer stack of titanium and tungsten.

7 . The electro-acoustic resonator according to claim 1 , wherein the piezoelectric layer comprises one of aluminum nitride and aluminum scandium nitride.

8 . The electro-acoustic resonator according to claim 1 , wherein the seed layer consists of aluminum and the thickness of the seed layer is in the range of 5 nm to 10 nm or the thickness of the seed layer is 8 nm.

9 . The electro-acoustic resonator according to claim 1 , wherein the piezoelectric layer comprises aluminum scandium nitride having a scandium portion at most 35 weight-% or of 5 weight-% to 15 weight-% or of 7 weight-%.

10 . A method for manufacturing an electro-acoustic resonator, comprising:

providing a carrier substrate and an acoustic mirror disposed on the carrier substrate;

forming a structured bottom electrode on the acoustic mirror;

forming a piezoelectric layer on the bottom electrode;

forming a seed layer comprising aluminum on the piezoelectric layer;

forming a layer of silicon dioxide on the seed layer;

removing a portion of the silicon dioxide layer in a region opposite the bottom electrode thereby exposing the seed layer;

forming a top electrode in the region of the exposed seed layer.

11 . The method according to claim 10 , wherein the step of forming a layer of silicon dioxide comprises depositing the layer of silicon dioxide on an aluminum seed layer by physical vapor deposition subjecting a silicon target to an atmosphere containing oxygen.

12 . The method according to claim 10 , after the step of removing a portion of the silicon dioxide layer and before the step of forming a top electrode, performing a step of forming an overlap layer made of metal and removing a portion of the overlap layer in a region opposite the bottom electrode so that the overlap layer is disposed between the top electrode and the seed layer in a region where the portion of the silicon dioxide layer is removed.

13 . A radio frequency (RF) filter, comprising:

a first and a second port;

a series path coupled between the first and second ports, the series path comprising a serial connection of a plurality of electro-acoustic resonators; and

one or more shunt paths coupled to at least one of the plurality of resonators of the series path, the one or more shunt paths each including at least one electro-acoustic resonator.