Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.
1. An optoelectronic semiconductor device comprising:
an optoelectronic semiconductor chip for emitting radiation,
an optical element disposed optically downstream of the semiconductor chip, and
potting body in which said semiconductor chip and said optical element are embedded,
wherein
the optical element comprises a structured, contiguous and optically effective area which is located inside the optical element directly at an optical contrast region, so that a refractive index jump of at least 0.4 is present between the optically effective area and the optical contrast region,
the optically effective area completely covers a radiation exit area of the semiconductor chip, and
the potting body directly surrounds the semiconductor chip and the optical element all around laterally in a form-fitting manner.
2. The optoelectronic semiconductor device according to claim 1 ,
wherein
the optical contrast region is an evacuated or gas-filled cavity,
said semiconductor chip is a surface emitting laser diode, and
the potting body and the optical element are flush with one another in a direction away from the semiconductor chip, so that the optical element remains free of the potting body on a light exit side.
3. The optoelectronic semiconductor device according to claim 1 ,
wherein the optical element comprises a base plate and a cover plate and the base plate is located between the semiconductor chip and the cover plate,
wherein the base plate and the cover plate are connected to each other by means of a frame so that the optical contrast region is tightly enclosed by the base plate, the cover plate and the frame, and
wherein the base plate and the cover plate comprise planar outer surfaces.
4. The optoelectronic semiconductor device according to claim 3 ,
wherein the optically effective area is limited to an inner side of the cover plate.
5. The optoelectronic semiconductor device according to claim 3 ,
wherein an inner side of the base plate is provided with a continuous and structured further optically effective area, and
wherein the optically effective area and the further optically effective area are the only areas of the optical element that are structured and intended for an optical effect.
6. The optoelectronic semiconductor device according to claim 3 ,
wherein the outer side of the cover plate is a flat surface lying in a device front side,
wherein outer sides of the frame are completely and directly covered by the potting body.
7. The optoelectronic semiconductor device according to claim 1 ,
in which the potting body and the optical element are directly and jointly followed by a protective cover, so that the protective cover forms a device front side of the semiconductor device.
8. The optoelectronic semiconductor device according to claim 1 ,
wherein the optical element is arranged spaced apart from the semiconductor chip, so that a region between the radiation exit area and the optical element is completely filled by the potting body.
9. The optoelectronic semiconductor device according to claim 1 ,
wherein the optical element is directly attached to the radiation exit area such that a distance between the radiation exit area and the optical element is at most 5 μm.
10. The optoelectronic semiconductor device according to claim 1 ,
wherein the optical element is a diffractive optical element or a multi-lens array such that an average structure size of optically effective structure elements of the optically effective area is between 0.1 μm and 2 μm inclusive, and
wherein the structure elements are arranged regularly.
11. The optoelectronic semiconductor device according to claim 1 ,
in which the optically effective area comprises a lateral extent greater than the semiconductor chip by at least a factor of 1.5, so that the semiconductor chip, as seen in plan view, lies completely within the optically effective area.
12. The optoelectronic semiconductor device according to claim 1 , further comprising a carrier on which the semiconductor chip and the potting body are attached,
wherein the carrier comprises a plurality of electrical contact vias such that electrical contact regions on a carrier front side with the semiconductor chip are electrically connected to electrical contact surfaces on a carrier rear side.
13. The optoelectronic semiconductor device according to claim 1 , further comprising at least two lead frame parts,
wherein the semiconductor chip is mounted on a first of the lead frame parts and electrically connected with a second of the lead frame parts, and
wherein the lead frame parts are mechanically connected to each other exclusively by means of the potting body.
14. The optoelectronic semiconductor device according to claim 1 , further comprising at least two lead frame parts and a housing base body,
wherein the semiconductor chip is mounted on a first of the lead frame parts and electrically connected with a second of the lead frame parts,
wherein the lead frame parts are mechanically connected to each other by means of the housing base body, and
wherein the semiconductor chip, the optical element and the potting body are placed in a recess of the housing base body.
15. The optoelectronic semiconductor device according to claim 1 , which is surface mountable,
wherein the optical element is oriented parallel to a mounting side of the semiconductor device,
wherein the only region within the semiconductor device through which the radiation emitted by the semiconductor chip passes and which is not formed by condensed matter is said cavity, and
wherein at least 98% of the radiation emitted from the semiconductor chip passes through the optically effective area.
16. A method for producing the optoelectronic semiconductor device according to claim 1 , the method comprising:
providing a carrier,
attaching the semiconductor chip on the carrier,
placing the optical element on the semiconductor chip, and
producing the potting body,
wherein the potting body is produced by film-assisted injection molding or transfer molding so that the optical element and the potting body are flush with each other in the direction away from the semiconductor chip.
17. An optoelectronic semiconductor device comprising:
an optoelectronic semiconductor chip for emitting radiation,
an optical element disposed optically downstream of the semiconductor chip, and
a potting body in which said semiconductor chip and said optical element are embedded,
wherein
the optical element comprises a structured, contiguous and optically effective area which is located inside the optical element directly at an optical contrast region, so that a refractive index jump of at least 0.4 is present between the optically effective area and the optical contrast region,
the optically effective area completely covers a radiation exit area of the semiconductor chip,
the potting body and the optical element are flush with one another in a direction away from the semiconductor chip, so that the optical element remains free of the potting body on a light exit side, and
the potting body directly surrounds the semiconductor chip and the optical element all around laterally in a form-fitting manner.
18. The optoelectronic semiconductor device according to claim 1 ,
wherein the potting body directly adjoins the optical element and the semiconductor chip.