Thin-film saw device with multilayer waveguide
In at least one embodiment, the SAW device comprises a carrier substrate ( 1 ), a piezoelectric thin-film ( 2 ) on the carrier substrate, an interdigital electrode structure ( 3 ) on the piezoelectric thin-film and a layer stack ( 4 ) of waveguide layers. The layer stack is arranged between the carrier substrate and the piezoelectric thin-film. The layer stack comprises a first waveguide layer ( 41 ) and second waveguide layer ( 42 ), wherein a sound velocity in the first waveguide layer is at least 1.5 times as great as in the second waveguide layer. The device may comprise a temperature compensating layer ( 5 ) and a trap rich layer ( 6 ) between the layer stack and the carrier substrate.
1. A SAW device comprising:
a carrier substrate,
a piezoelectric thin-film on the carrier substrate,
an interdigital electrode structure on the piezoelectric thin-film,
a layer stack of waveguide layers, the layer stack being arranged between the carrier substrate and the piezoelectric thin-film, wherein
the layer stack comprises a first waveguide layer and a second waveguide layer,
a sound velocity in the first waveguide layer is at least 1.5 times as great as a sound velocity in the second waveguide layer, and
a TCF compensating layer having a positive temperature coefficient of frequency arranged between the layer stack and the carrier substrate.
2. The SAW device according to claim 1 ,
wherein the layer stack comprises several of the first waveguide layers and several of the second waveguide layers, wherein the first waveguide layers and the second waveguide layers are arranged alternately.
3. The SAW device according to claim 1 , wherein:
the sound velocity in the first waveguide layer is greater than a sound velocity in the piezoelectric thin-film, and
the sound velocity in the second waveguide layer is smaller than the sound velocity in the piezoelectric thin-film.
4. The SAW device according to claim 1 , wherein a mean thickness of the first and/or second waveguide layer is at most λ/4, wherein λ is the wavelength of a main sound wave during operation of the SAW device.
5. The SAW device according to claim 4 , wherein a mean thickness of the piezoelectric thin-film is at most 0.6λ.
6. The SAW device according to claim 1 , wherein:
the first waveguide layer comprises one or more of the following materials: AlN, SiC, Al 2 O 3 , diamond like carbon, TiN, and
the second waveguide layer comprises one or more of the following materials: SiO 2 , Si 3 N 4 , doped SiO 2 , GeO 2 .
7. The SAW device according to claim 1 , wherein a polycrystalline silicon layer is arranged between the layer stack and the carrier substrate.
8. The SAW device according to claim 1 , wherein the SAW device comprises a SAW resonator, the interdigital electrode structure on the piezoelectric thin-film forming an interdigital transducer of the SAW resonator.
9. The SAW device according to claim 8 , wherein the SAW resonator has a resonant frequency of at least 2.5 GHz.
10. A SAW device comprising:
a carrier substrate;
a piezoelectric thin-film on the carrier substrate;
an interdigital electrode structure on the piezoelectric thin-film;
a layer stack of waveguide layers, the layer stack being arranged between the carrier substrate and the piezoelectric thin-film, wherein
the layer stack comprises a first waveguide layer and a second waveguide layer, and
a sound velocity in the first waveguide layer is at least 1.5 times as great as a sound velocity in the second waveguide layer; and
a dielectric ion blocking layer arranged between the layer stack and the carrier substrate.
11. The SAW device according to claim 10 , wherein the dielectric ion blocking layer comprises polycrystalline silicon.
12. The SAW device according to claim 10 , wherein:
the first waveguide layer comprises at least one or more of the following materials: AlN, SiC, Al 2 O 3 , diamond like carbon, TiN; and
the second waveguide layer comprises at least one or more of the following materials: SiO 2 , Si 3 N 4 , doped SiO 2 , GeO 2 .
13. The SAW device according to claim 10 , wherein the SAW device comprises a SAW resonator, the interdigital electrode structure on the piezoelectric thin-film forming an interdigital transducer of the SAW resonator.
14. The SAW device according to claim 10 ,
wherein the layer stack comprises several of the first waveguide layer and several of the second waveguide layer arranged alternately with the several of the first waveguide layer.
15. The SAW device according to claim 10 , wherein:
the sound velocity in the first waveguide layer is greater than a sound velocity in the piezoelectric thin-film, and
the sound velocity in the second waveguide layer is smaller than the sound velocity in the piezoelectric thin-film.