SEMICONDUCTOR LASER DEVICE

1 . A semiconductor laser device, comprising:

semiconductor laser elements each of which emits a light beam having a different wavelength;

a deflection element that deflects at least one of emitted light beams from the semiconductor laser elements; and

a wavelength dispersion element that wavelength-couples the emitted light beams onto a same optical axis,

wherein the deflection element has planes each corresponding to the emitted light beams; and

the emitted light beams overlap one another on the wavelength dispersion element.

2 . The semiconductor laser device according to claim 1 ,

wherein the emitted light beams each have a divergence angle in a first axis direction and a divergence angle in a second axis direction orthogonal to the first axis direction,

the semiconductor laser device further comprises lenses each of which converts at least one of the divergence angle in the first axis direction or the divergence angle in the second axis direction,

at least one plane among the planes is inclined with respect to an optical axis of a corresponding one of the emitted light beams, and

the semiconductor laser elements are arranged in one axis direction of the first axis direction and the second axis direction.

3 . The semiconductor laser device according to claim 1 , further comprising:

a partial reflection mirror that reflects a part of the emitted light beams wavelength-coupled by the wavelength dispersion element, transmits another part of the emitted light beams, and forms an external resonator with the semiconductor laser elements.

4 . The semiconductor laser device according to claim 2 ,

wherein the lenses include a first lens that reduces the divergence angle of a laser beam in the first axis direction.

5 . The semiconductor laser device according to claim 4 ,

wherein the lenses include a second lens that reduces the divergence angle of the emitted light beams in the second axis direction.

6 . The semiconductor laser device according to claim 5 ,

wherein the second lens is disposed between the first lens and the wavelength dispersion element.

7 . The semiconductor laser device according to claim 2 ,

wherein a beam parameter product of each of the emitted light beams is 1 [mm·mrad] or less in the one axis direction.

8 . The semiconductor laser device according to claim 1 ,

wherein the deflection element has an incident surface on which the emitted light beams are incident, and an emitting surface from which the emitted light beams incident on the incident surface are emitted, and

the planes are transmission surfaces that transmit the emitted light beams, and are included in at least one of the incident surface or the emitting surface.

9 . The semiconductor laser device according to claim 1 ,

wherein the planes are reflective surfaces that reflect the emitted light beams, respectively.

10 . The semiconductor laser device according to claim 5 ,

wherein the one axis direction is the first axis direction,

the first lens is a fast axis collimator, and

the second lens is a slow axis collimator.

11 . The semiconductor laser device according to claim 10 , further comprising:

packages in each of which a corresponding one of the semiconductor laser elements is mounted, and which comprise a metal material,

wherein each of the packages includes lead pins that supply electric power to the semiconductor laser element mounted in the package among the semiconductor laser elements are included,

the first lens is disposed at each of light emission portions of the packages,

each of the packages has a mounting surface on which the semiconductor laser element is mounted, and

each of the packages includes two planes parallel to the mounting surface, and a distance between the two planes corresponds to a thickness of the package, and is equal to each of intervals at which the semiconductor laser elements are arranged.

12 . The semiconductor laser device according to claim 11 ,

wherein the semiconductor laser elements are mounted in the packages via sub-mounts comprising a conductive material,

one of the lead pins has a potential identical to a potential of the packages, and

the semiconductor laser elements are voltage-driven.

13 . The semiconductor laser device according to claim 11 ,

wherein the semiconductor laser elements are each mounted in corresponding one of the packages via a corresponding one of sub-mounts comprising an electrically insulating material,

the lead pins are insulated from a corresponding one of the packages, and

the semiconductor laser elements are current-driven.

14 . The semiconductor laser device according to claim 11 ,

wherein the packages each airtightly seal a corresponding one of the semiconductor laser elements.

15 . The semiconductor laser device according to claim 5 ,

wherein a beam parameter product of each of the emitted light beams in the first axis direction and the second axis direction is 1 [mm·mrad] or less,

the semiconductor laser elements are arranged in the second axis direction,

the first lens is a fast axis collimator, and

the second lens is a slow axis collimator.

16 . The semiconductor laser device according to claim 15 , further comprising:

one package in which the semiconductor laser elements are mounted, and which comprises a metal material,

wherein the one package includes lead pins that supply electric power to the semiconductor laser elements, and

the first lens is disposed in the one package.

17 . The semiconductor laser device according to claim 16 ,

wherein the semiconductor laser elements are mounted in the one package via one sub-mount.

18 . The semiconductor laser device according to claim 16 ,

wherein the one package airtightly seals the semiconductor laser elements.