IP Library Granted Patent US 12,040,203
Granted Patent B2
US 12,040,203 · App. 17/443,450 · Granted Jul 16, 2024

Techniques for thermal treatment of electronic devices

Inventors: Conor F. Madigan (San Francisco, CA); Eliyahu Vronsky (Los Altos, CA); Alexander Sou-Kang Ko (Santa Clara, CA); Justin Mauck (Belmont, CA)
Assignee: Kateeva, Inc.
H01L21/67225H01L21/67393H10K71/00H10K71/135H10K71/40H10K71/811H01L21/67161H01L21/67167H01L21/6719H01L21/67196H01L21/67201H01L21/67207
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Quick Facts
Patent No.
US 12,040,203
App. No.
17/443,450
Granted
Jul 16, 2024
Kind
B2
Abstract

Apparatus and techniques are described herein for use in manufacturing electronic devices. such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.

Claims (37)

1. A method of manufacturing an electronic device, the method comprising:

depositing an organic material in a pattern on a substrate while the substrate is positioned in a first processing environment of a printing system, the first processing environment having a first oxygen content;

after the depositing of the organic material, transferring the substrate with the organic material deposited thereon to a second processing environment of a thermal treatment module, the second processing environment having a second oxygen content, the thermal treatment module comprising a plurality of thermally-controlled regions disposed in a stacked configuration;

thermally treating the organic material while the substrate is located in the second processing environment;

controlling a temperature of the thermal treatment module during the thermally treating the organic material;

controlling the first processing environment during depositing the organic material on the substrate and the second processing environment during thermally treating the organic material such that the first oxygen content of the first processing environment is greater than the second oxygen content of the second processing environment, and

controlling a water vapor content, an ozone content, and a particulate contamination level in the first processing environment and the second processing environment.

2. The method of claim 1 , further comprising after thermally treating the organic material, transferring the substrate to a substrate cooling module, and cooling the substrate in the substrate cooling module.

3. The method of claim 2 , wherein cooling the substrate comprises cooling the substrate in the substrate cooling module until a temperature of the substrate is below 100° C.

4. The method of claim 2 , wherein transferring the substrate to the substrate cooling module comprises loading the substrate into one substrate cooling region of a plurality of substrate cooling regions arranged in a stacked configuration in the substrate cooling module.

5. The method of claim 2 , further comprising controlling a third processing environment in the substrate cooling module during cooling the substrate to maintain a third oxygen content, wherein the first oxygen content of the first processing environment during depositing the organic material is at least 100 times greater than the third oxygen content of the third processing environment during cooling the substrate.

6. The method of claim 5 , wherein:

controlling the first processing environment comprises maintaining the first oxygen content, a water vapor content, an ozone content, and a particulate contamination level below first limits;

controlling the second processing environment comprises maintaining the second oxygen content, a water vapor content, an ozone content, and a particulate contamination level below second limits; and

controlling the third processing environment comprises maintaining the third oxygen content, a water vapor content, an ozone content, and a particulate contamination level below third limits.

7. The method of claim 5 , wherein the second oxygen content of the second processing environment and the third oxygen content of the third processing environment are substantially equal.

8. The method of claim 1 , wherein:

the first processing environment comprises clean dry air, and

controlling a water content of the first processing environment below 100 parts per million and an ozone content of the first processing environment below 100 parts per million.

9. The method of claim 1 , wherein the second processing environment comprises a non-reactive gas having minimal or no reactivity with the organic material deposited on the substrate.

10. The method of claim 1 , wherein the second processing environment comprises nitrogen and is above atmospheric pressure.

11. The method of claim 1 , wherein controlling the second processing environment comprises maintaining the second oxygen content to be less than 1000 parts-per-million of oxygen, a water vapor to be less than 100 parts-per-million, and an ozone to be less than 100 parts-per-million.

12. The method of claim 1 , wherein controlling the first processing environment comprises maintaining the first oxygen content of the first processing environment to be more than 1,000 parts-per-million.

13. The method of claim 1 , wherein depositing the organic material on the substrate comprises depositing the organic material using an inkjet printing assembly.

14. The method of claim 1 , wherein during transferring the substrate to the second processing environment of the thermal treatment module, the second processing environment is maintained at or above atmospheric pressure without raising the second oxygen content of the second processing environment to a level of more than 10 parts per million.

15. The method of claim 1 , wherein thermally treating the organic material comprises providing a laminar flow of gas across the substrate.

16. The method of claim 1 , wherein controlling the temperature of the thermal treatment module comprises controlling a temperature of the substrate to a target substrate temperature or a target substrate temperature uniformity.

17. The method of claim 1 , wherein controlling the temperature of the thermal treatment module comprises controlling the temperature of one region of the thermal treatment module independently of other regions of the thermal treatment module.

18. The method of claim 1 , further comprising:

transferring the substrate with the organic material deposited thereon to a drying module; and

drying the organic material prior to thermally treating the organic material.

19. The method of claim 18 , wherein drying the organic material comprises drying the organic material in a fourth processing environment within the drying module, the fourth processing environment having an at least partially evacuated atmosphere.

20. The method of claim 1 , wherein controlling the second processing environment comprises maintaining the second oxygen content of the second processing environment at a level of less than 10 parts-per-million.

21. The method of claim 1 , wherein the substrate is a first substrate, and the method further comprises:

loading a second substrate with the organic material deposited thereon into the thermal treatment module with the first substrate, the first substrate loaded into a first region of the thermal treatment module and the second substrate loaded into a second region of the thermal treatment module;

thermally treating the organic material deposited on the second substrate while the second substrate is in the second region; and

independently controlling the temperature of the first region during the thermally treating of the organic material deposited on the first substrate and of the second region during the thermally treating of the organic material deposited on the second substrate.

Assignments (3)
SECURITY INTEREST Recorded Apr 19, 2022
From: KATEEVA CAYMAN HOLDING, INC.
To: HB SOLUTION CO., LTD.
Reel/Frame 059727/0111 →
SECURITY INTEREST Recorded Mar 17, 2022
From: KATEEVA, INC.; KATEEVA CAYMAN HOLDING, INC.
To: SINO XIN JI LIMITED
Reel/Frame 059382/0053 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2021
From: MADIGAN, CONOR F; VRONSKY, ELIYAHU; KO, ALEXANDER SOU-KANG; MAUCK, JUSTIN
To: KATEEVA, INC.
Reel/Frame 057702/0187 →