Photonic crystal surface-emitting laser
A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, an index matching layer and a photonic crystal structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The index matching layer is disposed over the n-type cladding layer and is arranged around the active layer. The index matching layer is electrically insulating, and an effective refractive index of the index matching layer is substantially identical to an effective refractive index of the active layer. The photonic crystal structure is disposed over the active layer and the index matching layer.
1. A photonic crystal surface-emitting laser, comprising:
a first substrate;
an n-type cladding layer disposed over the first substrate;
an active layer disposed over the n-type cladding layer;
an index matching layer disposed over the n-type cladding layer and being arranged around the active layer, wherein the index matching layer is electrically insulating, and an effective refractive index of the index matching layer is substantially identical to an effective refractive index of the active layer; and
a photonic crystal structure disposed over the active layer and the index matching layer.
2. The photonic crystal surface-emitting laser of claim 1 , wherein the index matching layer is transparent to light emitted by the active layer.
3. The photonic crystal surface-emitting laser of claim 1 , wherein a lateral length of the active layer is smaller than a lateral length of the photonic crystal structure.
4. The photonic crystal surface-emitting laser of claim 1 , wherein a cross-sectional area of the active layer is smaller than a cross-sectional area of the photonic crystal structure.
5. The photonic crystal surface-emitting laser of claim 1 , wherein the active layer is located in an orthogonal projection area of the photonic crystal structure onto the n-type cladding layer.
6. The photonic crystal surface-emitting laser of claim 1 , wherein the index matching layer is at least partially located in an orthogonal projection area of the photonic crystal structure onto the n-type cladding layer.
7. The photonic crystal surface-emitting laser of claim 1 , wherein a lateral length of the active layer is within a range from 6 to 10 micrometers.
8. The photonic crystal surface-emitting laser of claim 1 , wherein the index matching layer is in contact with a side surface of the active layer.
9. The photonic crystal surface-emitting laser of claim 8 , wherein the active layer further has a top surface and a bottom surface, the top surface faces the photonic crystal structure, the bottom surface faces the n-type cladding layer, the side surface is connected between the top surface and the bottom surface, and the index matching layer is spaced apart from the top surface and the bottom surface of the active layer.
10. The photonic crystal surface-emitting laser of claim 1 , wherein the active layer is cylindrical.
11. The photonic crystal surface-emitting laser of claim 1 , further comprising an electron blocking layer disposed over the active layer and the index matching layer.
12. The photonic crystal surface-emitting laser of claim 1 , further comprising a p-type cladding layer and a second substrate, wherein the p-type cladding layer is disposed over the photonic crystal structure, and the second substrate is disposed over the p-type cladding layer.
13. The photonic crystal surface-emitting laser of claim 12 , further comprising a metal electrode, wherein the metal electrode is disposed on a side of the second substrate away from the p-type cladding layer, and the metal electrode is in contact with a surface of the second substrate away from the p-type cladding layer.
14. The photonic crystal surface-emitting laser of claim 1 , further comprising a transparent conductive layer disposed over the photonic crystal structure.
15. The photonic crystal surface-emitting laser of claim 14 , further comprising a metal electrode, wherein the metal electrode is disposed on a side of the transparent conductive layer away from the photonic crystal structure, and the metal electrode is in contact with a surface of the transparent conductive layer away from the photonic crystal structure.
16. The photonic crystal surface-emitting laser of claim 1 , further comprising a metal electrode, wherein the metal electrode is disposed on a side of the first substrate away from the n-type cladding layer, and the metal electrode is in contact with a surface of the first substrate away from the n-type cladding layer.
17. The photonic crystal surface-emitting laser of claim 1 , wherein the photonic crystal structure comprises a plurality of periodic holes.
18. The photonic crystal surface-emitting laser of claim 17 , wherein the first substrate, the n-type cladding layer and the active layer are arranged along a direction, and the periodic holes are arranged on a plane normal to the direction.
19. The photonic crystal surface-emitting laser of claim 17 , wherein the periodic holes have circular, quadrangular or hexagonal cross-sections.
20. The photonic crystal surface-emitting laser of claim 1 , wherein the active layer comprises quantum well.