Semiconductor optical device and optical transceiver module
The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 μm or more.
1. A semiconductor optical device in a mesa stripe type, comprising:
a semiconductor substrate with a projection in a stripe shape extending in a first direction,
the projection constituting at least a portion of a mesa stripe structure;
a quantum well layer in the stripe shape extending in the first direction and on the projection,
the quantum well layer constituting another portion of the mesa stripe structure;
and
a buried layer, adjacent to both sides of the mesa stripe structure in a second direction perpendicular to the first direction, on an upper surface of the semiconductor substrate,
wherein:
the upper surface of the semiconductor substrate extends from a horizontal plane to an inclined surface of the mesa stripe structure and has a first angle respective to the horizontal plane,
the inclined surface extends from the upper surface of the semiconductor substrate to an upright surface of the mesa stripe structure and has a second angle respective to the horizontal plane,
the second angle being greater than the first angle,
the upright surface rises from the inclined surface, and
an area of the mesa stripe structure defined by a plane of the upper surface of the semiconductor substrate, a plane of the inclined surface, and a plane of the upright surface is recrystallized structure.
2. The semiconductor optical device of claim 1 , wherein the quantum well layer is an active layer.
3. The semiconductor optical device of claim 1 , wherein the quantum well layer is an absorption layer.
4. The semiconductor optical device of claim 1 , wherein the quantum well layer is a multiple quantum well (MQW) layer.
5. The semiconductor optical device of claim 1 , further comprising:
a grating layer disposed on the quantum well layer.
6. The semiconductor optical device of claim 5 , further comprising:
a clad layer disposed on the grating layer.
7. The semiconductor optical device of claim 6 , further comprising:
a contact layer disposed on the clad layer.
8. The semiconductor optical device of claim 1 , wherein a height of the inclined surface is shorter than a height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer.
9. The semiconductor optical device of claim 1 , further comprising:
a passivation film disposed on the buried layer.
10. The semiconductor optical device of claim 9 , further comprising:
an electrode disposed on the passivation film.
11. A method of manufacturing a semiconductor optical device, comprising:
forming a mesa stripe structure, the mesa stripe structure comprising:
a projection extending from a semiconductor substrate in a first direction,
wherein an upper surface of the semiconductor substrate has a first slope descending from the projection at a first angle respective to a horizontal plane, and
a quantum well layer extending in the first direction and on the projection,
wherein the mesa stripe structure has an upright surface;
forming an inclined surface, of the mesa stripe structure, with a second slope ascending from the upper surface of the semiconductor substrate at a second angle, greater than the first angle, respective to the horizontal plane,
wherein the upper surface of the semiconductor substrate extends from the horizontal plane to the inclined surface and has the first angle,
wherein the inclined surface extends from the upper surface of the semiconductor substrate to the upright surface and has the second angle, and
wherein an area of the mesa stripe structure defined by a plane of the upper surface of the semiconductor substrate, a plane of the inclined surface, and a plane of the upright surface is recrystallized structure; and
forming a buried layer, adjacent to both sides of the mesa stripe structure in a second direction perpendicular to the first direction, on the upper surface of the semiconductor substrate,
wherein the buried layer is in contact with the inclined surface and the upright surface.
12. The method of claim 11 , wherein forming the inclined surface comprises:
providing a heat treatment until the inclined surface is formed.
13. The method of claim 12 , wherein providing the heat treatment comprises:
providing the heat treatment until a height of the inclined surface is 0.3 μm or more.
14. The method of claim 12 , wherein providing the heat treatment comprises:
providing the heat treatment until a height of the inclined surface is 80% or less of a height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer.
15. The method of claim 11 , wherein forming the mesa stripe structure comprises:
forming a grating layer on the quantum well layer.
16. The method of claim 15 , wherein forming the mesa stripe structure comprises:
forming a clad layer on the grating layer.
17. The method of claim 16 , wherein forming the mesa stripe structure comprises:
forming a contact layer on the clad layer.
18. The method of claim 11 , further comprising:
forming an isolation trench for insulating a contact layer of the mesa stripe structure.
19. The method of claim 18 , further comprising:
forming a passivation film based on forming the isolation trench.
20. The method of claim 18 , further comprising:
forming an insulating film based on forming the isolation trench.