Photonic crystal surface-emitting laser
A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, a photonic crystal structure, a p-type cladding layer, an n-type semiconductor layer and a meta-surface structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The photonic crystal structure is disposed over the active layer. The p-type cladding layer is disposed over the photonic crystal structure. The n-type semiconductor layer is disposed over the p-type cladding layer. The meta-surface structure disposed on a surface of the n-type semiconductor layer away from the p-type cladding layer.
1. A photonic crystal surface-emitting laser, comprising:
a substrate;
an n-type cladding layer disposed over the substrate;
an active layer disposed over the n-type cladding layer;
a photonic crystal structure disposed over the active layer;
a p-type cladding layer disposed over the photonic crystal structure;
a first n-type semiconductor layer disposed over the p-type cladding layer; and
a meta-surface structure disposed on a surface of the first n-type semiconductor layer away from the p-type cladding layer, wherein the meta-surface structure is an additional layer attached to and in contact with the surface of the first n-type semiconductor layer away from the p-type cladding layer.
2. The photonic crystal surface-emitting laser of claim 1 , wherein the substrate, the n-type cladding layer and the active layer are arranged along a first direction, and the meta-surface structure is configured to direct a laser beam to output at an angle to the first direction.
3. The photonic crystal surface-emitting laser of claim 2 , wherein a maximum angle between the laser beam and the first direction is 90 degrees.
4. The photonic crystal surface-emitting laser of claim 1 , wherein the meta-surface structure is configured to direct a laser beam to output at a plurality of different directions.
5. The photonic crystal surface-emitting laser of claim 1 , wherein the meta-surface structure partially covers the surface of the first n-type semiconductor layer away from the p-type cladding layer.
6. The photonic crystal surface-emitting laser of claim 1 , further comprising a metal electrode, wherein the metal electrode is disposed on the surface of the first n-type semiconductor layer away from the p-type cladding layer, and the metal electrode is arranged around the meta-surface structure.
7. The photonic crystal surface-emitting laser of claim 1 , further comprising a tunnel junction disposed in the first n-type semiconductor layer.
8. The photonic crystal surface-emitting laser of claim 7 , wherein a cross-sectional area of the tunnel junction is smaller than an area of the meta-surface structure.
9. The photonic crystal surface-emitting laser of claim 7 , wherein an orthogonal projection area of the tunnel junction onto the substrate is located in an orthogonal projection area of the meta-surface structure onto the substrate.
10. The photonic crystal surface-emitting laser of claim 7 , wherein the substrate, the n-type cladding layer and the active layer are arranged along a first direction, in a second direction normal to the first direction, a width of the tunnel junction is smaller than a width of the meta-surface structure.
11. The photonic crystal surface-emitting laser of claim 7 , wherein a cross-sectional area of the tunnel junction is smaller than a cross-sectional area of the photonic crystal structure.
12. The photonic crystal surface-emitting laser of claim 7 , wherein an orthogonal projection area of the tunnel junction onto the substrate is located in an orthogonal projection area of the photonic crystal structure onto the substrate.
13. The photonic crystal surface-emitting laser of claim 7 , wherein the substrate, the n-type cladding layer and the active layer are arranged along a first direction, in a second direction normal to the first direction, a width of the tunnel junction is smaller than a width of the photonic crystal structure.
14. The photonic crystal surface-emitting laser of claim 7 , further comprising a first p-type semiconductor layer disposed over the p-type cladding layer and surrounded by the first n-type semiconductor layer, wherein the tunnel junction is disposed between the first p-type semiconductor layer and the first n-type semiconductor layer.
15. The photonic crystal surface-emitting laser of claim 14 , wherein the tunnel junction comprises a second p-type semiconductor layer and a second n-type semiconductor layer, the second p-type semiconductor layer is located between the first p-type semiconductor layer and the second n-type semiconductor layer, wherein the second p-type semiconductor layer has higher doping concentration than the first p-type semiconductor layer, and the second n-type semiconductor layer has higher doping concentration than the first n-type semiconductor layer.
16. The photonic crystal surface-emitting laser of claim 7 , wherein a thickness of the tunnel junction is within a range from 5 to 100 nm.
17. The photonic crystal surface-emitting laser of claim 1 , further comprising an electron blocking layer disposed between the active layer and the photonic crystal structure.
18. The photonic crystal surface-emitting laser of claim 1 , wherein the photonic crystal structure comprises a plurality of periodic holes.
19. The photonic crystal surface-emitting laser of claim 18 , wherein the periodic holes have circular, quadrangular or hexagonal cross-sections.