Electroacoustic device with conductive acoustic mirrors

1. An electroacoustic device, comprising:

a substrate;

a bottom electrode layer disposed above the substrate;

an acoustic mirror stack having:

a first dielectric layer disposed above the bottom electrode layer; and

a first conductive layer disposed above the first dielectric layer;

a piezoelectric layer disposed above the acoustic mirror stack; and

one or more first vias disposed between the bottom electrode layer and the first conductive layer, the one or more first vias electrically coupling the bottom electrode layer and the first conductive layer.

2. The electroacoustic device of claim 1 , further comprising a top electrode layer disposed above the piezoelectric layer.

3. The electroacoustic device of claim 1 , wherein the acoustic mirror stack further comprises:

one or more second dielectric layers disposed above the bottom electrode layer;

one or more second conductive layers, each disposed above a respective one of the one or more second dielectric layers; and

one or more second vias disposed between the first conductive layer and a respective one of the one or more second conductive layers, the one or more second vias electrically coupling the first conductive layer and the respective one of the one or more second conductive layers.

4. The electroacoustic device of claim 3 , wherein the piezoelectric layer is in direct contact with an uppermost conductive layer of the one or more second conductive layers.

5. The electroacoustic device of claim 1 , wherein the piezoelectric layer is in direct contact with the first conductive layer.

6. The electroacoustic device of claim 1 , further comprising a second conductive layer coupled between the bottom electrode layer and the first dielectric layer.

7. The electroacoustic device of claim 1 , wherein the first dielectric layer comprises silicon dioxide (SiO 2 ).

8. The electroacoustic device of claim 1 , wherein the first conductive layer comprises tungsten (W).

9. The electroacoustic device of claim 1 , wherein the one or more first vias comprise tungsten (W) or molybdenum (Mo).

10. The electroacoustic device of claim 1 , further comprising a second dielectric layer between the substrate and the bottom electrode layer.

11. The electroacoustic device of claim 1 , wherein the electroacoustic device is configured as a bulk acoustic wave (BAW) resonator.

12. A radio frequency (RF) filter comprising the electroacoustic device of claim 1 .

13. The electroacoustic device of claim 1 , wherein a thickness of the bottom electrode layer is greater than 100 nanometers.

14. A method for signal processing, comprising:

receiving a signal at a terminal of an electroacoustic device; and

processing the signal via the electroacoustic device, wherein the electroacoustic device comprises:

a substrate;

a bottom electrode layer disposed above the substrate;

an acoustic mirror stack having:

a first dielectric layer disposed above the bottom electrode layer; and

a first conductive layer disposed above the first dielectric layer;

a piezoelectric layer disposed above the acoustic mirror stack; and

one or more first vias disposed between the bottom electrode layer and the first conductive layer, the one or more first vias electrically coupling the bottom electrode layer and the first conductive layer.

15. The method of claim 14 , wherein the terminal of the electroacoustic device comprises the bottom electrode layer.

16. The method of claim 14 , wherein the electroacoustic device further comprises a top electrode layer disposed above the piezoelectric layer, the terminal of the electroacoustic device comprising the top electrode layer.

17. The method of claim 14 , wherein the acoustic mirror stack further comprises:

one or more second dielectric layers disposed above the bottom electrode layer;

one or more second conductive layers, each disposed above a respective one of the one or more second dielectric layers; and

one or more second vias disposed between the first conductive layer and a respective one of the one or more second conductive layers, the one or more second vias electrically coupling the first conductive layer and the respective one of the one or more second conductive layers.

18. The method of claim 17 , wherein the piezoelectric layer is in direct contact with an uppermost conductive layer of the one or more second conductive layers.

19. The method of claim 14 , wherein the piezoelectric layer is in direct contact with the first conductive layer.

20. The method of claim 14 , wherein the electroacoustic device further comprises a second conductive layer coupled between the bottom electrode layer and the first dielectric layer.

21. The method of claim 14 , wherein the first dielectric layer comprises silicon dioxide (SiO 2 ).

22. The method of claim 14 , wherein the first conductive layer comprises tungsten (W).

23. The method of claim 14 , wherein the one or more first vias comprise tungsten (W) or molybdenum (Mo).

24. The method of claim 14 , wherein the electroacoustic device further comprises a second dielectric layer between the substrate and the bottom electrode layer.

25. The method of claim 14 , wherein the electroacoustic device is configured as a bulk acoustic wave (BAW) resonator.

26. The method of claim 14 , wherein a thickness of the bottom electrode layer is greater than 100 nanometers.

27. A method of fabricating an electroacoustic device, comprising:

forming a bottom electrode layer above a substrate;

forming an acoustic mirror stack comprising:

a first dielectric layer disposed above the bottom electrode layer; and

a first conductive layer disposed above the first dielectric layer;

forming one or more vias electrically coupling the bottom electrode layer and the first conductive layer; and

forming a piezoelectric layer above the acoustic mirror stack.