Metamorphic two-junction photovoltaic devices with removable graded buffers
The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.
1. A method for manufacturing a metamorphic thermophotovoltaic device, the method comprising:
a first depositing of a buffer layer onto a substrate;
a second depositing of a first contact layer;
a third depositing of a first junction;
a fourth depositing of a tunnel junction;
a fifth depositing of a second junction;
and removing the buffer layer and the substrate, wherein the metamorphic thermophotovoltaic device comprises, after the removing:
the first contact layer;
the first junction;
the tunnel junction;
and the second junction, wherein:
the second depositing comprises:
a first growing step performed at a temperature between about 500° C. and about 600° C., resulting in a first layer;
and a second growing step performed at a temperature between about 650° C. and about 750° C. resulting in a second layer;
the first junction comprises a first III-V composition,
the second junction comprises a second III-V composition,
each of the first contact layer, the first junction, the tunnel junction, and the second junction are substantially lattice-matched,
each of the first layer and the second layer of the first contact layer comprises Ga (1-x) InAs where 0.2<x<0.4, and the first layer has a selenium concentration between about 1×10 18 and about 1×10 20 Se atoms per cubic centimeter.
2. The method of claim 1 , wherein the buffer layer comprises a continuous graded buffer layer or a plurality of step-graded buffer layers.
3. The method of claim 1 , further comprising, between the first depositing and the second depositing, the depositing of a sacrificial layer capable of degradation in the presence of a chemical etchant.
4. The method of claim 3 , wherein the sacrificial layer comprises AlInP.
5. The method of claim 3 , wherein the removing of the buffer layer and the substrate comprises applying the chemical etchant to the sacrificial layer.
6. The method of claim 5 , wherein the chemical etchant comprises an acid.
7. The method of claim 6 , wherein the acid comprises hydrochloric acid.
8. The method of claim 1 , further comprising a first intermediate depositing of a strain overshoot layer having a thickness of about 1 μm, performed after the first depositing and before the second depositing.
9. The method of claim 8 , further comprising a second intermediate depositing of a step-back layer lattice-matched to the in-plane lattice constant of the overshoot layer and having a thickness of about 1 μm, performed after the first intermediate depositing and before the second depositing.
10. The method of claim 8 , wherein the strain overshoot layer comprises Ga (1-z) In z P and 0.5≤z≤0.8.
11. The method of claim 9 , wherein the step-back layer comprises an alloy comprising at least one two of gallium, indium, aluminum, arsenic, antimony, nitrogen, or phosphorous.
12. The method of claim 1 , wherein each of the first layer and the second layer of the first contact layer comprises about Ga 0.70 In 0.30 As.
13. The method of claim 12 , wherein each of the first layer and the second layer of the first contact layer further comprises nitrogen.
14. The method of claim 1 , wherein:
the first layer of the first contact layer has a thickness between about 0.1 μm and about 1.0 μm, and
the second layer of the first contact layer has a thickness between greater than zero μm and about 1.0 μm.
15. The method of claim 1 , wherein the second layer has a selenium concentration between about 1×10 17 and about 1×10 19 Se atoms per cubic centimeter.
16. The method of claim 15 , wherein the Se for the first layer and the second layer of the first contact layer is provided by an H 2 Se gas.
17. The method of claim 1 , wherein the tunnel junction comprises at least three of aluminum, gallium, indium, arsenic, phosphorous, or antimony.
18. The method of claim 17 , wherein:
the tunnel junction comprises a first layer and a second layer,
the first layer comprises gallium, arsenic, and antimony, and
the second layer comprises gallium and indium and at least one of arsenic or phosphorous.
19. The method of claim 1 , further comprising:
after the fifth depositing, a sixth depositing of a second contact layer, wherein:
the second contact layer and the second junction are substantially lattice-matched.