Seed layer for spin torque oscillator in microwave assisted magnetic recording device
Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.
1. A magnetic recording head, comprising:
a main pole; and
a spin torque oscillator (STO), comprising:
a seed layer comprising a template layer and a damping reduction layer over the template layer, the template layer being disposed in contact with the main pole and the damping reduction layer, wherein the template layer comprises ruthenium or a ruthenium alloy, and wherein the damping reduction layer comprising a nickel aluminum alloy;
a spin polarization layer over the damping reduction layer;
a spacer layer over the spin polarization layer; and
a field generation layer over the spacer layer.
2. The magnetic recording head of claim 1 , wherein the nickel aluminum alloy comprises an atomic percent content of nickel in an atomic percent content in a range from 20% to 80 and aluminum in a range from 20% to 80%.
3. The magnetic recording head of claim 1 , wherein the spin polarization layer comprises a layer on the damping reduction layer, the layer selected from a group consisting of a nickel iron layer and cobalt manganese germanium layer.
4. The magnetic recording head of claim 1 , wherein the damping reduction layer has face centered cubic structure.
5. The magnetic recording head of claim 1 , wherein the field generation layer has face centered cubic structure or Heusler ordered phase structure interfacing with the damping reduction layer.
6. A data storage device comprising the magnetic recording head of claim 1 .
7. The magnetic recording head of claim 1 , wherein the spin polarization layer is disposed in contact with the damping reduction layer.
8. The magnetic recording head of claim 1 , wherein the template layer further comprises chromium or titanium.
9. A magnetic recording head, comprising:
a main pole; and
a spin torque oscillator (STO) device, comprising:
a seed layer comprising:
a texture reset layer disposed on and in contact with the main pole, the texture reset layer comprising tantalum and one or more of nickel and iron, wherein the texture reset layer comprises an atomic percent content of tantalum in a range from 20% to 50%, wherein a sum of an atomic percent of the tantalum and the one or more of nickel and iron equals 100 percent;
a template layer on the texture reset layer, and
a damping reduction layer on the template layer;
a spin polarization layer on the damping reduction layer;
a spacer layer over the spin polarization layer; and
a field generation layer over the spacer layer.
10. The magnetic recording head of claim 9 , wherein the template layer comprises a material selected from the group consisting of a ruthenium or a ruthenium alloy.
11. The magnetic recording head of claim 9 , wherein the damping reduction layer comprises a nickel aluminum alloy.
12. The magnetic recording head of claim 9 , wherein the spin polarization layer is in contact with the texture reset layer.
13. The magnetic recording head of claim 9 , wherein the texture reset layer comprises an atomic percent content of tantalum in a range from 25% to 35%.
14. The magnetic recording head of claim 9 , wherein the texture reset layer comprises tantalum in an atomic percent content in a range from 20% to 50% and nickel in an atomic percent content in a range from 50% to 80%.
15. The magnetic recording head of claim 9 , wherein the texture reset layer comprises tantalum in an atomic percent content in a range from 20% to 50% and iron in an atomic percent content in a range from 50% to 80%.
16. The magnetic recording head of claim 9 , wherein the texture reset layer is a NiFeTa layer comprising tantalum in an atomic percent content in a range from 20% to 50%, nickel in an atomic percent content in a range from 1% to 75%, and iron in an atomic percent content in a range from 1% to 75%.
17. A data storage device comprising the magnetic recording head of claim 9 .
18. The magnetic recording head of claim 9 , wherein the texture reset layer has a thickness of about 1 nm to about 6 nm.
19. A magnetic recording head, comprising:
a spin torque oscillator (STO) device, comprising:
a seed layer comprising:
a texture reset layer comprising an atomic percent content of tantalum in a range from 20% to 50%:
a template layer on the texture reset layer, and
a damping reduction layer on the template layer;
a spin polarization layer on the damping reduction layer;
a spacer layer over the spin polarization layer; and
a field generation layer over the spacer layer, wherein the texture reset layer has a nano-crystalline surface interfacing with the spin polarization layer.