Optically switched IGBT
A switching device includes an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate. A stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET.
1. A switching device comprising:
an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate; and
a stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET.
2. The switching device as recited in claim 1 , wherein positive terminals of the photosensitive p-n junction layers are electrically connected to the gate, and negative terminals of the photosensitive p-n junction layers are electrically connected to the emitter to switch the IGBT or MOSFET to allow current flow between collector and the emitter when the photosensitive p-n junction layers are exposed to photonic energy.
3. The switching device as recited in claim 1 , wherein the stack is epitaxially grown on the gate.
4. The switching device as recited in claim 1 , further comprising a bottom contact and reflector layer connecting the stack to the gate.
5. The switching device as recited in claim 4 , wherein the bottom contact and reflector layer has a thickness on order with that of one of the photo-sensitive p-n junction layers.
6. The switching device as recited in claim 1 , further comprising a top transparent or filter layer stacked on the stack opposite from the gate.
7. The switching device as recited in claim 1 , further comprising:
control logic;
an optical interface operatively connected to be controlled by the control logic, wherein the optical interface includes a illuminator; and
an optical fiber optically connecting between the illuminator and the stack so the control logic can control current flow between the collector and the emitter.
8. The switching device as recited in claim 1 , further comprising a load and a voltage source operatively connected to the emitter and the collector to allow current flow from the voltage source to the load when current flow in the IGBT or MOSFET is switched on.
9. The switching device as recited in claim 1 , wherein the gate includes a polished surface, and wherein the stack is stacked directly on the gate.
10. A system comprising:
an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate;
a stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET;
control logic, including a first waveform controller and a second waveform controller;
an optical interface operatively connected to be controlled by the control logic, wherein the optical interface includes a first illuminator operatively connected to the first waveform generator and a second illuminator operatively connected to the second waveform generator;
a first optical fiber optically connecting between the first illuminator and the stack; and
a second optical fiber optically connecting between the second illuminator and the stack so the control logic can control current flow between the collector and the emitter redundantly with the first and second optical fibers.
11. The system as recited in claim 10 , further comprising a bottom contact and reflector layer connecting the stack to the gate.
12. The system as recited in claim 10 , wherein the gate includes a polished surface, and wherein the stack is stacked directly on the gate without an intervening conductor.
13. A system comprising
a plurality of switching devices, each including:
an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate; and
a stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET;
control logic, including a plurality of waveform controllers;
an optical interface operatively connected to be controlled by the control logic, wherein the optical interface includes a plurality of illuminators each operatively connected to a respective one of the plurality of waveform controllers, each of the plurality of illuminators being of a different wavelength;
a respective initial optical fiber optically connecting between each of the plurality of illuminators and an optical combiner;
a main optical fiber connecting between the initial optical fibers and an optical splitter; and
a respective terminal optical fiber optically each connecting between the optical splitter and a respective one of the stacks so the control logic can control current flow for all of the IGBTs or MOSFETs independently.
14. The system as recited in claim 13 , further comprising for each of the switching devices, a bottom contact and reflector layer connecting the stack to the gate.
15. The system as recited in claim 13 , wherein each gate includes a polished surface, and wherein the stack is stacked directly on the gate without an intervening conductor.
16. The system as recited in claim 13 , wherein each stack includes a wavelength-selective optical filter that only allows it to operate when illuminated by light in a particular wavelength range.