Slider assemblies having recesses with solder structures for magnetic recording devices, and related methods of forming slider assemblies
Aspects of the present disclosure generally relate to slider assemblies for magnetic heads of magnetic recording devices. In one aspect, a slider assembly for magnetic recording devices includes a slider and an anti-reflection coating (ARC) structure disposed on the slider. The ARC structure includes an outer surface facing away from the slider, and a recess extending into the outer surface to define a recessed surface. The slider assembly includes a soldered structure disposed on the recessed surface and at least partially in the recess of the ARC structure. In one aspect, a method of forming a slider assembly includes forming an anti-reflection coating (ARC) structure on a slider. The ARC structure includes an outer surface facing away from the slider. The method includes forming a recess in the ARC structure, and forming a solder structure on a recessed surface and at least partially in the recess of the ARC structure.
1. A slider assembly for magnetic recording devices, comprising:
a slider;
an anti-reflection coating (ARC) structure disposed on the slider, the ARC structure comprising:
an outer surface facing away from the slider, and
a recess extending into the outer surface to define a recessed surface; and
a soldered structure disposed on the recessed surface and at least partially in the recess of the ARC structure.
2. The slider assembly of claim 1 , wherein the ARC structure comprises:
a first layer disposed on the slider and formed of a tantalum oxide;
a second layer disposed on the first layer and formed of a silicon oxide;
a third layer disposed on the second layer and formed of a tantalum oxide; and
a fourth layer disposed on the third layer and formed of a silicon oxide.
3. The slider assembly of claim 2 , wherein:
the first layer of the ARC structure is of a first thickness that is 5 nm or less;
the second layer of the ARC structure is of a second thickness that is within a range of 250 nm to 300 nm;
the third layer of the ARC structure is of a third thickness that is within a range of 50 nm to 100 nm; and
the fourth layer of the ARC structure is of a fourth thickness that is within a range of 125 nm to 175 nm.
4. The slider assembly of claim 2 , wherein the recess extends through the fourth layer of the ARC structure such that the recessed surface is a part of the third layer of the ARC structure.
5. The slider assembly of claim 2 , wherein the soldered structure comprises:
a first layer disposed on the fourth layer of the ARC structure, the first layer of the soldered structure is formed of titanium (Ti);
a second layer disposed on the first layer of the soldered structure, the second layer of the soldered structure is formed of platinum (Pt); and
a third layer disposed on the second layer of the soldered structure, the third layer of the soldered structure is formed of gold (Au).
6. The slider assembly of claim 5 , wherein:
the first layer of the soldered structure is of a fifth thickness that is 75 nm or less;
the second layer of the soldered structure is of a sixth thickness that is 225 nm or less; and
the third layer of the soldered structure is of a seventh thickness that is 175 nm or less.
7. The slider assembly of claim 5 , wherein the soldered structure further comprises:
one or more soldered layers formed of one or more gold tin (AuSn) intermetallic compounds.
8. A magnetic recording device comprising the slider assembly of claim 1 .
9. A slider assembly for data storage devices, comprising:
a slider means;
an anti-reflection coating (ARC) structure disposed on the slider means, the ARC structure comprising:
a first layer disposed on the slider means and formed of a tantalum oxide,
a second layer disposed on the first layer and formed of a silicon oxide,
a third layer disposed on the second layer and formed of a tantalum oxide, and
a fourth layer disposed on the third layer and formed of a silicon oxide, the fourth layer comprising an outer surface facing away from the slider means, and
a recess extending into the outer surface of the fourth layer to define a recessed surface; and
a soldered structure disposed on the recessed surface and at least partially in the recess of the ARC structure.
10. The slider assembly of claim 9 , wherein the recessed surface is a part of the third layer of the ARC structure.
11. The slider assembly of claim 9 , further comprising a chip assembly, the chip assembly comprising:
a first layer disposed on the soldered structure, the first layer of the chip assembly formed of platinum (Pt);
a second layer disposed on the first layer of the chip assembly, the second layer of the chip assembly formed of titanium (Ti); and
a submount disposed on the second layer of the chip assembly, the submount formed of silicon (Si).
12. A magnetic recording device comprising the slider assembly of claim 9 .
13. A method of forming a slider assembly, comprising:
forming an anti-reflection coating (ARC) structure on a slider, the ARC structure comprising an outer surface facing away from the slider;
forming a recess in the ARC structure, the recess extending into the outer surface of the ARC structure to define a recessed surface; and
forming a solder structure on the recessed surface and at least partially in the recess of the ARC structure.
14. The method of claim 13 , wherein the forming of the recess in the ARC structure comprises: etching away material of the ARC structure using an ion beam etching operation.
15. The method of claim 14 , further comprising, prior to the forming of the recess:
forming one or more photoresist structures on and outwardly of the ARC structure, wherein the etching comprises selectively etching the ARC structure relative to the one or more photoresist structures.
16. The method of claim 15 , further comprising conducting a lift off operation to remove the one or more photoresist structures and solder material disposed on the one or more photoresist structures.
17. The method of claim 14 , wherein the ion beam etching operation comprises directing argon (Ar) ions toward the ARC structure.
18. The method of claim 13 , wherein the solder structure comprises:
a first layer disposed on the recessed surface, the first layer formed of titanium (Ti);
a second layer disposed on the first layer of the solder structure, the second layer formed of platinum (Pt);
a third layer disposed on the second layer of the solder structure, the third layer formed of gold (Au);
a fourth layer disposed on the third layer of the solder structure, the fourth layer formed of tin (Sn); and
a fifth layer disposed on the fourth layer of the solder structure, the fifth layer formed of gold (Au).
19. The method of claim 18 , further comprising:
forming a gold (Au) layer on the fifth layer of the solder structure;
forming a chip assembly on the gold (Au) layer, the chip assembly comprising:
a first layer disposed on the gold (Au) layer, the first layer of the chip assembly formed of platinum (Pt);
a second layer disposed on the first layer of the chip assembly, the second layer of the chip assembly formed of titanium (Ti); and
a submount disposed on the second layer of the chip assembly, the submount formed of silicon (Si).
20. The method of claim 19 , further comprising soldering the chip assembly to the solder structure, the soldering comprising:
melting together the fourth layer of the solder structure, the fifth layer of the solder structure, and the gold (Au) layer formed on the fifth layer to form a soldered structure comprising one or more soldered layers formed of one or more gold tin (AuSn) intermetallic compounds.