Photolithography system including selective light array

1. A mask-less photolithography device for imparting a predetermined geometric pattern on a surface of a substrate, the mask-less photolithography device comprising:

an array of light emitters oriented to provide simultaneous exposure of all of an area of the substrate to be patterned;

a first plurality of light emitters within the array of light emitters configured to emit a first wavelength;

a second plurality of light emitters within the array of light emitters configured to emit a second wavelength; and

a controller for selectively activating a subset of the array of light emitters corresponding to an entirety of the predetermined geometric pattern to be transferred by the mask-less photolithography device to the surface of the substrate.

2. The mask-less photolithography device of claim 1 , further comprising a reduction lens disposed between the array of light emitters and the substrate.

3. The mask-less photolithography device of claim 1 , wherein the array of light emitters comprises a plurality of light-emitting diodes (LEDs) configured for emitting light having a wavelength of approximately 180 nm to approximately 450 nm.

4. The mask-less photolithography device of claim 1 , wherein the array of light emitters is configured to emit light over a surface area that is larger than the substrate for exposing an entire surface area of the substrate in emitted light.

5. The mask-less photolithography device of claim 1 , further comprising a sensor for measuring at least one of a wavelength spectrum, an intensity, a magnitude, or an exposure time of the subset of the array of light emitters.

6. The mask-less photolithography device of claim 1 , wherein the array of light emitters comprises a uniform size for selectively emitting from a uniform range of wavelength frequencies.

7. The mask-less photolithography device of claim 1 , wherein the array of light emitters comprises a first size and a second size, wherein the first size of the array of light emitters emits from a first range of wavelengths and the second size of the array of light emitters from a second range of wavelengths.

8. A system for transferring a predetermined geometric pattern to a surface of a substrate through mask-less photolithography, comprising:

a control system for controlling a mask-less photolithographic device and comprising at least one design file comprising the predetermined geometric pattern; and

the mask-less photolithographic device comprising:

an array of light emitters oriented to provide simultaneous exposure of all of an area of the substrate, the substrate having a photoresist on an upper surface thereof,

wherein a subset of the array of light emitters is individually controllable to emit a variable wavelength range,

wherein the array of light emitters is configured to transfer an entirety of the predetermined geometric pattern to the surface of the substrate,

wherein the array of light emitters is selected for activation by instructions contained in the at least one design file,

wherein a first plurality of light emitters is activated to emit a first wavelength and a second plurality of light emitters is activated simultaneously with the first plurality of light emitters to emit a second wavelength.

9. The system of claim 8 , further comprising a sensor for measuring at least one of a wavelength spectrum, an intensity, a magnitude, or an exposure time of the light emitters.

10. The system of claim 8 , further comprising a reduction lens disposed between the array of light emitters and the substrate.

11. The system of claim 8 , further comprising a sensor for measuring at least one of a wavelength spectrum, an intensity, a magnitude, or an exposure time of the subset of the array of light emitters.

12. The system of claim 8 , wherein the array of light emitters comprises a uniform size for selectively emitting from a uniform range of wavelengths.

13. The system of claim 8 , wherein the array of light emitters comprises a first size and a second size, wherein the first size of the array of light emitters emits from a first range of wavelengths and the second size of the array of light emitters emits from a second range of wavelengths.

14. The system of claim 8 , wherein the array of light emitters comprises a plurality of light-emitting diodes (LEDs) configured for emitting light having a wavelength of approximately 180 nm to approximately 450 nm.

15. The system of claim 8 , wherein the array of light emitters is configured to emit over a surface area that is larger than the substrate for exposing an entire surface area of the substrate.

16. A method of transferring a geometric pattern to a surface of a substrate, the method comprising:

receiving, from a design file, the geometric pattern;

selecting, from a mask-less photolithography device having an array of light emitters, a subset of the array of light emitters corresponding to an entirety of the geometric pattern;

activating the subset corresponding to the geometric pattern,

wherein the light emitters are configured to emit at a range of different wavelengths,

wherein a first plurality of light emitters of the subset is activated to emit at a first wavelength and a second plurality of light emitters of the subset is activated simultaneously with the first plurality of light emitters to emit at a second wavelength;

providing simultaneous exposure to exposing a predetermined area of the surface of the substrate having a photoresist layer,

wherein the predetermined area of the surface of the substrate corresponds to the entirety of the geometric pattern for transferring the entirety of the geometric pattern simultaneously;

wherein providing simultaneous exposure of the predetermined area of the surface of the substrate causes a chemical reaction between the first wavelength, the second wavelength, and the photoresist layer;

deactivating the subset of the array of light emitters to stop simultaneously exposing the substrate; and

removing an unexposed portion of the photoresist layer from the substrate.

17. The method of claim 16 , further comprising selecting a new substrate and a new design file for transferring a second geometric pattern to the new substrate.

18. The method of claim 16 , further comprising monitoring at least one of a wavelength spectrum, an intensity, a magnitude, or an exposure time of the subset of the array of light emitters using a sensor.

19. The method of claim 16 , wherein exposing the predetermined area of the substrate comprises an exposure time of less than five minutes.

20. The method of claim 16 , wherein the array of light emitters comprises a first size and a second size, wherein the first size of the array of light emitters emits from a first range of wavelengths and the second size of the array of light emitters emits from a second range of wavelengths.

21. The method of claim 16 , wherein the array of light emitters comprises a uniform size for selectively emitting light from a uniform range of wavelength.

22. The method of claim 16 , wherein the array of light emitters comprises a plurality of light-emitting diodes (LEDs) configured for emitting light having a wavelength of approximately 180 nm to approximately 450 nm.