IP Library Granted Patent US 12,322,569
Granted Patent B2
US 12,322,569 · App. 17/493,816 · Granted Jun 3, 2025

Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system

Inventors: Marcel Nicolaas Jacobus van Kervinck (Monster, NL); Vincent Sylvester Kuiper (The Hague, NL)
Assignee: ASML Netherlands B.V.
H01J37/3177G03F7/70383G06F30/392G06F30/394H01J37/3174H01L21/027H01L21/0274H01L21/0277H01L21/76816H01L23/573G06F2115/02G06F2119/18H01J2237/31764
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Quick Facts
Patent No.
US 12,322,569
App. No.
17/493,816
Granted
Jun 3, 2025
Kind
B2
Abstract

A method of creating electronic devices such as semiconductor chips using a maskless lithographic exposure system such as a charged particle multi-beamlet lithography system ( 301 A- 301 D). The maskless lithographic exposure system comprises a lithography subsystem ( 316 ) including a maskless pattern writer such as a charged particle multi-beamlet lithography machine ( 1 ) or ebeam machine. The method comprises introducing unique chip design data ( 430 ) or information related thereto into pattern data comprising common chip design data before streaming the pattern data to the maskless pattern writer.

Claims (38)

1. An electronic device, which is a member of a set of semiconductor chips, comprising:

a common design layout part that is the same for all of the semiconductor chips of the set; and

a non-common design layout part that is the same for only a subset of the semiconductor chips of the set,

wherein the common design layout part and the non-common design layout part are formed in a plurality of layers, and

wherein the non-common design layout part includes at least one of: connections between a metal layer and a gate in a contact layer of the plurality of layers, or a P- or N-doped active region of a transistor of one of the plurality of layers.

2. The electronic device according to claim 1 , wherein the common design layout part and the non-common design layout part are interconnected to form an electronic circuit.

3. The electronic device according to claim 2 , wherein the electronic device comprises at least one input terminal for receiving a challenge and at least one output terminal for outputting a response, and the electronic circuit forms a challenge-response circuit connected for the at least one input terminal and the at least one outputterminal,

wherein the challenge-response circuit is adapted for generating a response at the at least one output terminal based on a challenge applied to the at least one input terminal, the challenge and the response having a predetermined relationship.

4. The electronic device according to claim 1 , wherein the non-common design layout part includes a via connection between two or more layers of the plurality of layers.

5. The electronic device according to claim 1 , wherein the electronic device is created using a maskless lithographic exposure system comprising a maskless pattern writer,

wherein the maskless lithographic exposure system is configured to expose a pattern on a surface of a target according to pattern data,

wherein the pattern data comprises common chip design data corresponding to the common design layout part, and

wherein the maskless lithographic exposure system is configured to insert unique chip design data corresponding to the non-common design layout part into the pattern data before streaming the pattern data to the maskless pattern writer.

6. The electronic device according to claim 1 , wherein the non-common design layout part is based on secret data.

7. The electronic device of claim 6 , wherein the secret data is decrypted before generating non-common chip design data corresponding to the non-common design layout part, the secret data being provided to a maskless lithographic exposure system during creation of the non-common design layout part by the maskless lithographic exposure system.

8. The electronic device according to claim 1 , wherein the electronic device is a read only memory.

9. An electronic device, which is a member of a set of semiconductor chips, comprising:

a common design layout part that is the same for all of the semiconductor chips of the set; and

a non-common design layout part that is the same for only a subset of the semiconductor chips of the set,

wherein the common design layout part and the non-common design layout part are formed in three or more layers, and

wherein the non-common design layout part is formed on at least a first one of the layers having a second one of the layers above the first layer and having a third one of the layers below the first layer.

10. The electronic device according to claim 9 , wherein the common design layout part and the non-common design layout part are interconnected to form an electronic circuit.

11. The electronic device according to claim 10 , wherein the electronic device comprises at least one input terminal for receiving a challenge and at least one output terminal for outputting a response, and the electronic circuit forms a challenge-response circuit connected for the at least one input terminal and the at least one outputterminal,

wherein the challenge-response circuit is adapted for generating a response at the at least one output terminal based on a challenge applied to the at least one input terminal, the challenge and the response having a predetermined relationship.

12. The electronic device according to claim 9 , wherein the non-common design layout part includes a via connection between two or more layers of the three or more layers.

13. The electronic device according to claim 9 , wherein the electronic device is created using a maskless lithographic exposure system comprising a maskless pattern writer,

wherein the maskless lithographic exposure system is configured to expose a pattern on a surface of a target according to pattern data,

wherein the pattern data comprises common chip design data corresponding to the common design layout part, and

wherein the maskless lithographic exposure system is configured to insert unique chip design data corresponding to the non-common design layout part into the pattern data before streaming the pattern data to the maskless pattern writer.

14. The electronic device according to claim 9 , wherein the non-common design layout part is based on secret data.

15. The electronic device of claim 14 , wherein the secret data is decrypted before generating non-common chip design data corresponding to the non-common design layout part, the secret data being provided to a maskless lithographic exposure system during creation of the non-common design layout part by the maskless lithographic exposure system.

16. The electronic device according to claim 9 , wherein the electronic device is a read only memory.

17. The electronic device according to claim 9 , wherein the non-common design layout part includes at least one of a plurality of electrical circuit elements and a plurality of connections between electrical circuit elements.

18. The electronic device according to claim 9 , wherein the non-common design layout part includes active regions of electrical circuit elements.

19. A method for manufacturing an electronic device that is a member of a set of semiconductor chips, the method comprising:

forming a common design layout part that is the same for all of the semiconductor chips of the set; and

forming a non-common design layout part that is the same for only a subset of the semiconductor chips of the set and is different for other ones of the semiconductor chips of the set, wherein the non-common design layout part includes at least one of: connections between a metal layer and a gate in a contact layer of a plurality of layers or a P- or N-doped active region of a transistor of one of a plurality of layers.

20. The electronic device of claim 19 , wherein the non-common design layout part is created using a maskless lithographic exposure system based on secret data provided to the maskless lithographic exposure system during creation of the non-common design layout part.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2021
From: VAN KERVINCK, MARCEL NICOLAAS JACOBUS; KUIPER, VINCENT SYLVESTER
To: MAPPER LITHOGRAPHY IP B.V.
Reel/Frame 057696/0332 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2021
From: J.J. WITTEKAMP
To: ASML NETHERLANDS B.V.
Reel/Frame 057710/0608 →
COURT APPOINTMENT Recorded Oct 4, 2021
From: MAPPER LITHOGRAPHY HOLDING B.V.; MAPPER LITHOGRAPHY IP B.V.; MAPPER LITHOGRAPHY B.V.
To: J.J. WITTEKAMP
Reel/Frame 057710/0687 →
Continuity (5)
Continuation 16331538
Continuation 15389558 · Dec 23, 2016
Provisional Application 62458040 · Feb 13, 2017
Provisional Application 62385049 · Sep 8, 2016
Related Publication 20220026815A1 · Jan 27, 2022
References Cited (73)
US 5699266A · Chung · 1997 [cited by applicant]
US 6646275B2 · Oae · 2003 [cited by applicant]
US 6833854B1 · Sandstrom · 2004 [cited by applicant]
US 7495245B2 · Zani · 2009 [cited by applicant]
US 7532378B2 · Tanaka · 2009 [cited by applicant]
US 7839484B2 · Yamaguchi · 2010 [cited by applicant]
US 7842525B2 · Sandstrom · 2010 [cited by applicant]
US 7936445B2 · Hintersteiner · 2011 [cited by applicant]
US 8143602B2 · Chen · 2012 [cited by applicant]
US 9032342B2 · Wahlsten · 2015 [cited by applicant]
US 9595419B1 · Monahan · 2017 [cited by applicant]
US 9672320B2 · Chang · 2017 [cited by examiner]
US 9899332B2 · Butler · 2018 [cited by examiner]
US 10026589B1 · Monahan · 2018 [cited by applicant]
US 10079206B2 · van Kervinck · 2018 [cited by applicant]
US 10312091B1 · Smayling · 2019 [cited by examiner]
US 10418324B2 · van Kervinck · 2019 [cited by applicant]
US 10522472B2 · De Langen · 2019 [cited by applicant]
US 10523433B1 · Monahan · 2019 [cited by applicant]
US 10527946B2 · De Jager · 2020 [cited by applicant]
US 10527950B2 · Smakman · 2020 [cited by applicant]
US 10600733B2 · van Kervinck · 2020 [cited by applicant]
US 10712669B2 · Smakman · 2020 [cited by applicant]
US 10714427B2 · De Langen · 2020 [cited by applicant]
US 11922058B2 · Li · 2024 [cited by examiner]
US 20040110313A1 · Matsunami · 2004 [cited by examiner]
US 20050177268A1 · Morinaga et al. · 2005 [cited by applicant]
US 20060064191A1 · Naya · 2006 [cited by examiner]
US 20070195834A1 · Tanaka et al. · 2007 [cited by applicant]
US 20070242252A1 · Tinnemans · 2007 [cited by applicant]
US 20100248158A1 · Chen et al. · 2010 [cited by applicant]
US 20120236369A1 · Pasupuleti · 2012 [cited by applicant]
US 20130082408A1 · Naoe · 2013 [cited by examiner]
US 20130299939A1 · Amoah · 2013 [cited by examiner]
US 20140151815A1 · Huang · 2014 [cited by examiner]
US 20140157212A1 · Chang · 2014 [cited by examiner]
US 20140160452A1 · De Jager · 2014 [cited by applicant]
US 20140170566A1 · Ivansen et al. · 2014 [cited by applicant]
US 20140264085A1 · Van De Peut · 2014 [cited by applicant]
US 20150026650A1 · Yeric · 2015 [cited by applicant]
US 20160064334A1 · Bishop · 2016 [cited by examiner]
US 20180068047A1 · Van Kervinck · 2018 [cited by applicant]
US 20190011841A1 · De Jager · 2019 [cited by applicant]
US 20200098697A1 · De Langen · 2020 [cited by applicant]
US 20200203125A1 · van Kervinck · 2020 [cited by applicant]
US 20200219806A1 · van Kervinck · 2020 [cited by applicant]
US 20200350259A1 · De Langen · 2020 [cited by applicant]
US 20240037310A1 · Chen · 2024 [cited by examiner]
CN 102844715A · 2012 [cited by applicant]
CN 103649836A · 2014 [cited by applicant]
EP 0712136A2 · 1996 [cited by applicant]
JP S59087817A · 1984 [cited by applicant]
JP 2001337439A · 2001 [cited by applicant]
JP 2002107904A · 2002 [cited by applicant]
JP 2002351931A · 2002 [cited by applicant]
JP 2003515930A · 2003 [cited by applicant]
JP 2009158776A · 2009 [cited by applicant]
JP 2011108830A · 2011 [cited by applicant]
JP 2012527765T · 2012 [cited by applicant]
JP 2013521641T · 2013 [cited by applicant]
JP 2014509812A · 2014 [cited by applicant]
JP 2018041950A · 2018 [cited by applicant]
JP 2018041951A · 2018 [cited by applicant]
TW 520564 · 2003 [cited by applicant]
TW 201107898A · 2011 [cited by applicant]
Notice of Reasons for Rejection from the Japan Patent Office issued in related Japanese Patent Application No. 2022-128576; mailed Aug. 8, 2023 (13 pgs.). [cited by applicant]
Search Report issued by the Chinese Patent Office in related Application No. 2017800688865, mailed Mar. 12, 2020 (2 pgs.). [cited by applicant]
First Office Action issued by the Chinese Patent Office in related Application No. 2017800688865, mailed Mar. 12, 2020 (11 pgs.). [cited by applicant]
Supplementary European Search Repot issued in European Application No. EP 17 84 8921; mailed Jun. 2, 2021 (2 pgs.). [cited by applicant]
N. William Parker et al., “A high throughput electron-beam direct-write lithography system”, Microlithography World, Pennwell Corporation, US, vol. 9, No. 3, Jan. 1, 2000 (Jan. 1, 2000) , pp. 22, 24-25, 30, XP009195346,… [cited by applicant]
Office Action of the Intellectual Property Office of Taiwan issued in related Taiwanese Patent Application No. 106130855; mailed Jun. 8, 2021 (22 pgs.). [cited by applicant]
Notice of Reasons for Rejection issued by the Japan Patent Office in related Japanese Patent Application No. 2019-513090; mailed Aug. 16, 2021 (17 pgs.). [cited by applicant]
Notification of Reason(s) for Refusal issued in related Korean Patent Application No. 10-2019-7009872; mailed Oct. 26, 2021 (16 pgs.). [cited by applicant]