QUANTUM DOT DEVICE AND ELECTRONIC DEVICE
A quantum dot quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, and a first hole auxiliary layer between the first electrode and the light emitting layer, wherein the first hole auxiliary layer includes a first hole auxiliary material and a second hole auxiliary material having a greater bandgap energy than a bandgap energy of the first hole auxiliary material, a difference between a HOMO energy level of the second hole auxiliary material and a HOMO energy level of the first hole auxiliary material is about 0.1 eV and less than about 0.8 eV, and a difference between a LUMO energy level of the second hole auxiliary material and a LUMO energy level of the first hole auxiliary material is greater than or equal to about 0.3 eV.
1 . A quantum dot device, comprising
a first electrode and a second electrode,
a light emitting layer between the first electrode and the second electrode, the light emitting layer comprising quantum dots, and
a first hole auxiliary layer between the first electrode and the light emitting layer,
wherein the first hole auxiliary layer comprises
a first hole auxiliary material, and
a second hole auxiliary material having a greater bandgap energy than a bandgap energy of the first hole auxiliary material,
wherein a difference between a highest occupied molecular orbital energy level of the second hole auxiliary material and a highest occupied molecular orbital energy level of the first hole auxiliary material is about 0.1 electronvolts to less than about 0.8 electronvolts, and
a difference between a lowest unoccupied molecular orbital energy level of the second hole auxiliary material and a lowest unoccupied molecular orbital energy level of the first hole auxiliary material is greater than or equal to about 0.3 electronvolts.
2 . The quantum dot device of claim 1 , wherein the first hole auxiliary material and the second hole auxiliary material are blended in the first hole auxiliary layer.
3 . The quantum dot device of claim 1 , wherein
the highest occupied molecular orbital energy level of the first hole auxiliary material is between a work function of the first electrode and a highest occupied molecular orbital energy level of the light emitting layer, and
the highest occupied molecular orbital energy level of the second hole auxiliary material is between the work function of the first electrode and the highest occupied molecular orbital energy level of the light emitting layer.
4 . The quantum dot device of claim 1 , wherein
the highest occupied molecular orbital energy level of the second hole auxiliary material is less than the highest occupied molecular orbital energy level of the first hole auxiliary material,
the lowest unoccupied molecular orbital energy level of the second hole auxiliary material is less than the lowest unoccupied molecular orbital energy level of the first hole auxiliary material.
5 . The quantum dot device of claim 1 , wherein
the highest occupied molecular orbital energy level of the first hole auxiliary material is about 5.1 electronvolts to about 6.0 electronvolts, and
the highest occupied molecular orbital energy level of the second hole auxiliary material is about 4.8 electronvolts to less than about 5.4 electronvolts.
6 . The quantum dot device of claim 1 , wherein
the lowest unoccupied molecular orbital energy level of the first hole auxiliary material is about 2.0 electronvolts to about 2.8 electronvolts, and
the lowest unoccupied molecular orbital energy level of the second hole auxiliary material is about 1.2 electronvolts to about 2.0 electronvolts.
7 . The quantum dot device of claim 1 , wherein the bandgap energy of the second hole auxiliary material is about 0.5 electronvolts to about 1.2 electronvolts greater than the bandgap energy of the first hole auxiliary material.
8 . The quantum dot device of claim 1 , wherein
the highest occupied molecular orbital energy level of the second hole auxiliary material is about 5.0 electronvolts to less than about 5.4 electronvolts, and
the lowest unoccupied molecular orbital energy level of the second hole auxiliary material is about 1.5 electronvolts to about 1.9 electronvolts, respectively.
9 . The quantum dot device of claim 8 , wherein the bandgap energy of the second hole auxiliary material is greater than or equal to about 3.0 electronvolts.
10 . The quantum dot device of claim 1 , wherein each of the first hole auxiliary material and the second hole auxiliary material is a polymer semiconductor.
11 . The quantum dot device of claim 10 , wherein the first hole auxiliary material and the second hole auxiliary material are soluble in the same solvent.
12 . The quantum dot device of claim 1 , wherein the second hole auxiliary material is an amine polymer.
13 . The quantum dot device of claim 1 , wherein the first hole auxiliary layer comprises less of the second hole auxiliary material than the first hole auxiliary material.
14 . The quantum dot device of claim 1 , wherein a mole ratio of the second hole auxiliary material to the first hole auxiliary material in the first hole auxiliary layer is about 0.01:1 to about 0.8:1.
15 . The quantum dot device of claim 1 , further comprising a second hole auxiliary layer between the first electrode and the first hole auxiliary layer.
16 . A quantum dot device, comprising
a first electrode and a second electrode,
a light emitting layer between the first electrode and the second electrode, the light emitting layer comprising quantum dots,
a first hole auxiliary layer between the first electrode and the light emitting layer, the first hole auxiliary layer comprising a mixture of a first hole auxiliary material and a second hole auxiliary material, and
a second hole auxiliary layer between the first electrode and the first hole auxiliary layer
wherein the first hole auxiliary layer comprises less of the second hole auxiliary material than the first hole auxiliary material,
a highest occupied molecular orbital energy level of the second hole auxiliary material is about 5.0 electronvolts to less than about 5.4 electronvolts, and
a lowest unoccupied molecular orbital energy level of the second hole auxiliary material is about 1.5 electronvolts to about 1.9 electronvolts.
17 . The quantum dot device of claim 16 , wherein
the highest occupied molecular orbital energy level of the first hole auxiliary material is about 5.1 electronvolts to about 6.0 electronvolts, and
the lowest unoccupied molecular orbital energy level of the first hole auxiliary material is about 2.0 electronvolts to about 2.8 electronvolts.
18 . The quantum dot device of claim 16 , wherein
each of the first hole auxiliary material and the second hole auxiliary material is a polymer semiconductor, and
the second hole auxiliary material is an amine polymer.
19 . The quantum dot device of claim 16 , wherein a mole ratio of the first hole auxiliary material and the second hole auxiliary material in the first hole auxiliary layer is about 2:1 to about 5:1.
20 . An electronic device comprising the quantum dot device of claim 1 .
21 . An electronic device comprising the quantum dot device of claim 16 .