Semiconductor device having hybrid middle of line contacts
A CMOS (complementary metal-oxide semiconductor) device includes an n-channel metal-oxide semiconductor (NMOS) device, a p-channel metal-oxide semiconductor (PMOS) device, the NMOS and the PMOS device surrounded by a first dielectric material, the NMOS device separated from the PMOS device by a second dielectric material, a first NMOS gate separated from a first PMOS gate by the second dielectric material, a second NMOS gate electrically connected to a second PMOS gate by a metal link disposed between the NMOS gate and the PMOS gate, the metal link disposed above the second dielectric material, a first source/drain (S/D) contact disposed above the second dielectric material, the first S/D contact disposed in contact with both NMOS S/D region and a PMOS S/D region, and a second S/D contact disposed adjacent to the second dielectric material, the second S/D contact disposed in contact with a single S/D region.
1 . A CMOS (complementary metal-oxide semiconductor) device comprising:
an n-channel metal-oxide semiconductor (NMOS) device;
a p-channel metal-oxide semiconductor (PMOS) device, the NMOS and the PMOS device surrounded by a first dielectric material, the NMOS device separated from the PMOS device by a second dielectric material;
a first NMOS gate separated from a first PMOS gate by the second dielectric material;
a second NMOS gate electrically connected to a second PMOS gate by a metal link disposed between the second NMOS gate and the second PMOS gate, the metal link disposed above the second dielectric material;
a first source/drain (S/D) contact disposed above the second dielectric material, the first S/D contact disposed in contact with both an NMOS S/D region and a PMOS S/D region; and
a second S/D contact disposed adjacent to the second dielectric material, the second S/D contact disposed in contact with a first single S/D region.
2 . The CMOS device according to claim 1 , further comprising a third S/D contact disposed adjacent to the second dielectric material, the third S/D contact disposed in contact with a second single S/D region.
3 . The CMOS device according to claim 1 , further comprising a third S/D contact disposed adjacent to the second dielectric material, the third S/D contact disposed in contact with a second PMOS S/D region.
4 . The CMOS device according to claim 1 , wherein the CMOS device comprises tri-gate channels, wherein one edge of a channel is disposed in contact with the second dielectric material.
5 . The CMOS device according to claim 1 , wherein the CMOS device comprises nanosheet channels.
6 . The CMOS device according to claim 1 , further comprising upper gate contacts.
7 . The CMOS device according to claim 1 , further comprising upper S/D contacts.
8 . A CMOS (complementary metal-oxide semiconductor) device comprising:
an n-channel metal-oxide semiconductor (NMOS) device;
a p-channel metal-oxide semiconductor (PMOS) device, the NMOS and the PMOS device surrounded by a first dielectric material, the NMOS device separated from the PMOS device by a second dielectric material;
a first NMOS gate separated from a first PMOS gate by the second dielectric material;
a second NMOS gate electrically connected to a second PMOS gate by a metal link disposed between the second NMOS gate and the second PMOS gate, the metal link disposed above the second dielectric material;
a first source/drain (S/D) contact disposed above the second dielectric material, the first S/D contact disposed in contact with both an NMOS S/D region and a PMOS S/D region;
a second S/D contact disposed adjacent to the second dielectric material, the second S/D contact disposed in contact with a single S/D region; and
a third S/D contact disposed adjacent to the second dielectric material, the third S/D contact disposed in contact with a single S/D region.
9 . The CMOS device according to claim 8 , further comprising the third S/D contact disposed adjacent to the second dielectric material, the third S/D contact disposed in contact with a second PMOS S/D region.
10 . The CMOS device according to claim 8 , wherein the CMOS device comprises tri-gate channel contacts wherein a channel edge is disposed in contact with the second dielectric material.
11 . The CMOS device according to claim 8 , wherein the CMOS device comprises nanosheet channels.
12 . The CMOS device according to claim 8 , further comprising upper gate contacts.
13 . The CMOS device according to claim 8 , further comprising upper S/D contacts.