Laser damage hardening of light modulator components for use with high optical fluence systems
An apparatus with first and second transparent conductive oxide layers is described. A photoconductive layer can be positioned between the first and a second transparent conductive oxide layers. The photoconductive layer can be a crystalline layer that can include bismuth silicate or other suitable materials. An electro-optical layer is positioned in contact with the photoconductive layer. In some embodiments the photoconductive layer is positionable to receive a write beam that defines a two-dimensional spatial pattern.
1. A light modulator, comprising:
first and second transparent conductive oxide layers;
a photoconductive layer positioned between the first and a second transparent conductive oxide layers, the photoconductive layer having main impurities of less than 5.0% and general impurities of less than 1.0%; and
an electro-optical layer positioned in contact with the photoconductive layer.
2. The light modulator of claim 1 , wherein general impurities include at least one of H 2 O (water), Ag, Cd, Cl, Cu, Mg, Na, Pb, SO 4 , and Zn.
3. The light modulator of claim 1 , wherein main impurities include at least one of Germanium, Sulfur, and Tungsten.
4. The light modulator of claim 1 , wherein main impurities are less than 0.1%.
5. The light modulator of claim 1 , wherein the photoconductive layer contains Bismuth.
6. The light modulator of claim 1 , wherein the photoconductive layer is at least one of Bismuth Silicate (Bi 2 SiO 3 , Bi 6 SiO 10 , Bi 12 SiO 20 , (BGO) Bismuth Germanate (BGO, Bi 2 GeO 3 , Bi 6 GeO 10 , Bi 12 GeO 20 , Bi 25 GeO 39 ), Bismuth Titanite (BTO, Bi 12 T 0.9 O 19.8 ), Bismuth Zirconate (BZO, Bi 38 ZO 38 ), Bismuth Ferrate (BFO, Bi 25 FeO 39 ), Bismuth Borate (BBO, Bi 24 BO 39 ), Bismuth Aluminum Phosphate (BAPO, Bi 24 AlPO 40 ), Bismuth Gallium Phosphate (BGPO, Bi 24 GaPO 40 ), Bismuth Gallium Vanadate (BFVO, Bi 24 GaVnO 40 ), Bismuth Zirconium Vanadate (Bi 36 ZnVnO 60 ), Aluminum Zinc Oxide (AZO), Cadmium Sulfide (CdS), Cadmium Selenide (CdSe), Zinc Sulfide (ZnS), Zinc Selenide (ZnSe), Indium Sulfide (In 2 S 3 ), Lead Sulfide (PbS), Cadmium Zinc Telluride (CdZTe), doped Germanium (n:Ge, p:Ge) amorphous Silicon (α-Si), doped Silicon (n:Si, p:Si), and Mercury Iodide (HgI 2 ).
7. The light modulator of claim 1 , wherein the photoconductive layer is a directly deposited thin film.
8. The light modulator of claim 1 , wherein the photoconductor layer further comprises one of a doped glass, chalcogenide glass, and quantum dot.
9. The light modulator of claim 1 , wherein the first and second transparent conductive oxide layers are at least one of an aluminum doped zinc oxide, fluorine doped tin oxide, doped graphene, doped chalcogenide, and exfoliated two-dimensional disulfide.
10. The light modulator of claim 1 , wherein the first and second transparent conductive oxide layers are directly deposited thin films.
11. The light modulator of claim 1 , wherein the photoconductive layer is in contact with the first transparent conductive layer, with the photoconductive layer positionable to receive a write beam that defines a two-dimensional spatial pattern.
12. The light modulator of claim 1 , wherein the electro-optical layer is at least one of a liquid crystal or quantum dot.
13. The light modulator of claim 1 , wherein the electro-optical layer comprises a liquid crystal layer that contains chiral or dopants to reduce viscosity to less than 0.5 Pa·s.
14. The light modulator of claim 1 , wherein the electro-optical layer comprises a liquid crystal operated at above 25C to achieve viscosity less than 0.5 Pa·s.
15. A light modulator, comprising:
first and second transparent conductive oxide layers;
an electro-optical layer positioned between the first and second transparent conductive oxide layers;
a photoconductive layer; and
at least one of a thermally insulative layer and a thermally conductive layer positioned between the first and second transparent conductive oxide layers,
wherein the electro-optical layer is laterally offset or rotated with respect to the photoconductive layer to permit external electrical contact with the first and second transparent conductive oxide layers.
16. The light modulator of claim 15 , wherein the electro-optical layer is a liquid crystal layer.
17. The light modulator of claim 15 , wherein at least two separate thermally conductive layers are respectively positioned on each side of the electro-optical layer.
18. The light modulator of claim 15 , wherein at least two thermally insulative layers are respectively positioned on each side of the electro-optical layer.
19. The light modulator of claim 15 , wherein at least two separate thermally conductive layers are respectively positioned on top of the transparent conductor layer.
20. The light modulator of claim 15 , wherein at least two separate thermally insulative layers are respectively positioned on each side of the electro-optical layer, and further comprising at least two thermally conductive layers positioned on top of the transparent conductor layer.
21. The light modulator of claim 15 , further comprising a fluid coolant system.
22. A reflective light modulator, comprising:
first and second transparent conductive oxide layers;
a photoconductive layer positioned between the first and second transparent conductive oxide layers;
an electro-optical layer; and
a reflective layer between the photoconductive layer and the electro-optical,
wherein the electro-optical layer is laterally offset or rotated with respect to the photoconductive layer to permit external electrical contact with the first and second transparent conductive oxide layers.
23. The reflective light modulator of claim 22 , further comprising at least one of a thermally insulative layer and a thermally conductive layer positioned between the first and second transparent conductive oxide layers.
24. A light modulator, comprising:
a thermal conductive top substrate assembly;
an electro-optics assembly with a first transparent conductive oxide layer;
a photoconductor assembly with a second transparent conductive oxide layer, wherein the electro-optics assembly and the photoconductor assembly have a same shape; and
a supporting thermal conductive substrate assembly,
wherein the electro-optics assembly is laterally offset or rotated with respect to the photoconductor assembly to permit external electrical contact with the respective first and second transparent conductive oxide layers.
25. The light modulator of claim 24 , wherein a thermally conductive layer in at least one of the thermal conductive top substrate assembly and the supporting thermal conductive substrate assembly has a thermal conductivity >5 W/m-K.