Functional signal line overdrive
Devices and techniques are disclosed herein to provide a number of different bias signals to each of multiple signal lines of an array of memory cells, each bias signal having an overdrive voltage above a target voltage by a selected increment and an overdrive period, to determine settling times of each of the multiple signal lines to the target voltage for the number of different bias signals, to determine a functional compensation profile for an array of memory cells comprising a relationship between the different bias signals and the determined settling times of the multiple signal lines.
1. A system comprising:
a compensation circuit configured to:
provide a number of different bias signals to each of multiple signal lines of an array of memory cells, each signal line configured to provide access to a group of memory cells of the array of memory cells, each bias signal having an overdrive voltage above a target voltage by a selected increment and an overdrive period;
determine settling times of each of the multiple signal lines to the target voltage for the number of different bias signals;
determine a functional compensation profile for the array of memory cells comprising a relationship between the different bias signals and the determined settling times across the multiple signal lines in a number of separate linear segments greater than one but less than N/2, wherein N is the number of multiple signal lines; and
store a representation of the determined functional compensation profile to compensate for variance in an electrical parameter across the signal lines of the array of memory cells.
2. The system of claim 1 , comprising the array of memory cells including the multiple signal lines,
wherein the compensation circuit is configured to:
determine an electrical characteristic of the array of memory cells; and
provide a respective bias signal to each of the multiple signal lines according to the determined functional compensation profile and the determined electrical characteristic of the array of memory cells to compensate for variance in the electrical parameter across the signal lines.
3. The system of claim 2 , wherein the electrical characteristic of the array of memory cells comprises at least one of a resistance or a capacitance of at least one of the multiple signal lines.
4. The system of claim 2 , wherein the electrical characteristic of the array of memory cells comprises a range of resistances across the multiple signal lines.
5. The system of claim 1 , wherein the compensation circuit is configured to determine the functional compensation profile across the array of memory cells in a number of segments greater than two.
6. A method comprising;
providing, using a compensation circuit, a number of different bias signals to each of multiple signal lines of an array of memory cells, each signal line configured to provide access to a group of memory cells of the array of memory cells, each bias signal having an overdrive voltage above a target voltage by a selected increment and an overdrive period;
determining, using the compensation circuit, settling times of each of the multiple signal lines to the target voltage for the number of different bias signals;
determining, using the compensation circuit, a functional compensation profile for the array of memory cells comprising a relationship between the different bias signals and the determined settling times across the multiple signal lines, including:
determining the functional compensation profile across the array of memory cells in a number of separate linear segments, greater than one but less than N/2, wherein N is the number of multiple signal lines; or
determining the functional compensation profile across the array of memory cells in a number of segments, wherein at least one of the number of segments includes a polynomial segment, wherein the number of segments is greater than one but less than N/3, and wherein N is the number of multiple signal lines; and
storing, using the compensation circuit, a representation of the determined functional compensation profile to compensate for variance in an electrical parameter across the signal lines of the array of memory cells.
7. The method of claim 6 , comprising:
determining an electrical characteristic of the array of memory cells; and
providing a respective bias signal to each of the multiple signal lines according to the determined functional compensation profile and the determined electrical characteristic of the array of memory cells to compensate for variance in the electrical parameter across the signal lines.
8. The method of claim 7 , wherein the electrical characteristic of the array of memory cells comprises at least one of a resistance or a capacitance of at least one of the multiple signal lines.
9. The method of claim 7 , wherein the electrical characteristic of the array of memory cells comprises a range of resistances across the multiple signal lines.
10. The method of claim 6 , wherein determining the functional compensation profile comprises determining the functional compensation profile across the array of memory cells in a number of segments greater than two.
11. The method of claim 6 , wherein determining the functional compensation profile comprises determining the functional compensation profile across the array of memory cells in the number of separate linear segments, greater than one but less than N/2.
12. The method of claim 6 , wherein determining the functional compensation profile comprises determining the functional compensation profile across the array of memory cells in the number of segments,
wherein at least one of the number of segments includes the polynomial segment, wherein the number of segments is greater than one but less than N/3.
13. A system comprising:
a compensation circuit configured to:
provide a number of different bias signals to each of multiple signal lines of an array of memory cells, each signal line configured to provide access to a group of memory cells of the array of memory cells, each bias signal having an overdrive voltage above a target voltage by a selected increment and an overdrive period;
determine settling times of each of the multiple signal lines to the target voltage for the number of different bias signals;
determine a functional compensation profile for the array of memory cells comprising a relationship between the different bias signals and the determined settling times across the multiple signal lines in a number of segments, wherein at least one of the number of segments includes a polynomial segment, wherein the number of segments is greater than one but less than N/3, and wherein N is the number of multiple signal lines; and
store a representation of the determined functional compensation profile to compensate for variance in an electrical parameter across the signal lines of the array of memory cells.
14. The system of claim 13 , comprising the array of memory cells including the multiple signal lines,
wherein the compensation circuit is configured to:
determine an electrical characteristic of the array of memory cells; and
provide a respective bias signal to each of the multiple signal lines according to the determined functional compensation profile and the determined electrical characteristic of the array of memory cells to compensate for variance in the electrical parameter across the signal lines.
15. The system of claim 14 , wherein the electrical characteristic of the array of memory cells comprises at least one of a resistance or a capacitance of at least one of the multiple signal lines.
16. The system of claim 14 , wherein the electrical characteristic of the array of memory cells comprises a range of resistances across the multiple signal lines.
17. The system of claim 13 , wherein the compensation circuit is configured to determine the functional compensation profile across the array of memory cells in a number of segments greater than two.