Plasma chamber with multiphase rotating independent gas cross-flow with reduced volume and dual VHF
Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.
1. A plasma treatment chamber, comprising:
one or more sidewalls;
a support surface within the one or more sidewalls to hold a workpiece;
a first gas injector along the one or more sidewalls to inject a first gas flow in a first direction generally parallel to and across a surface of the workpiece;
a first pump port along the one or more sidewalls generally opposite of the first gas injector to pump out the first gas flow, the first pump port including a first plasma screen and a first pressure control valve;
a second gas injector along the one or more sidewalls to inject a second gas flow in a second direction generally parallel to and across the surface of the workpiece, the second direction different from the first direction;
a second pump port along the one or more sidewalls generally opposite of the second gas injector to pump out the second gas flow, the second pump port including a second plasma screen and a second pressure control valve;
a third gas injector formed in an opening through the one or more sidewalls below the first plasma screen of the first pump port and over the first pressure control valve to inject a third gas flow from below the surface of the workpiece from the first pump port; and
a controller configured to control the injection of the first gas flow, the second gas flow, and the third gas flow as a process gas mixture, an independent gas injection (IGI) mixture, or both, the process gas mixture and the IGI mixture comprising one or more of an etchant gas or deposition gas, a diluent gas, an oxidizer gas, a reducing gas, and a halogen-containing gas.
2. The plasma treatment chamber of claim 1 , wherein the first gas flow, the second gas flow, or the third gas flow further comprises the deposition gas or the etchant gas, the deposition gas comprising a high carbon-to-fluorine ratio or a high hydrogen-to-fluorine ratio gas, and the etchant gas comprisinga lower carbon-to-fluorine ratio or a lower hydrogen-to-fluorine ratio gas.
3. The plasma treatment chamber of claim 1 , wherein the one or more sidewalls is divided into two more zones, the first gas injector is in a first zone and the second gas injector is in a second zone.
4. The plasma treatment chamber of claim 3 , wherein the first gas injector and the second gas injector comprise a portion of a gas injector array comprising a plurality of gas injectors assigned to two or more zones from which gas flows are injected across the workpiece, and wherein one or more of the zones is subdivided into one or more sub-zones to define narrow regions from which the first gas flow or the second gas flow is injected.
5. The plasma treatment chamber of claim 4 , wherein the process gas mixture is injected from a first one of the one or more sub-zones and the IGI mixture is simultaneously injected from a second one of the one or more sub-zones.
6. The plasma treatment chamber of claim 1 , further comprising a chamber lid over the workpiece where an interface between the one or more sidewalls and chamber lid surrounds a processing region containing the workpiece, the plasma treatment chamber further comprising a liner added at a corner of the chamber lid and the one or more sidewalls that reduces a volume of the processing region and reduces gas residency time.
7. The plasma treatment chamber of claim 1 , further comprising dual very high frequency (VHF) RF plasma source power generators having VHF-high frequency f1 and VHF-low frequency f2 coupled to at least one of a top electrode and a bottom electrode, where f1 is sufficiently high to produce a center-high non-uniform plasma ion or electron density or reactive species density distribution over the workpiece, and f2 is sufficiently low to produce a center-low non-uniform plasma ion or electron density or reactive species density distribution.
8. The plasma treatment chamber of claim 7 , wherein the dual VHF RF plasma source power generators power either respective ones of the top electrode and bottom electrode or a common one of the top electrode and bottom electrode.
9. The plasma treatment chamber of claim 8 , further comprising a machine learning model to control at least one of timing of the first gas flow and the second gas flow or VHF-low and VHF-high power levels of the dual VHF RF plasma source power generators.
10. The plasma treatment chamber of claim 1 , further comprising a showerhead plate that injects a fourth gas flow over the workpiece with a vertical velocity component.
11. A plasma treatment chamber, comprising:
one or more sidewalls;
a support within the one or more sidewalls to hold a workpiece;
a first gas injector along the one or more sidewalls at a first location;
a first pump port along the one or more sidewalls at a second location generally opposing the first gas injector, the first pump port including a first plasma screen and a first pressure control valve;
a second gas injector along the one or more sidewalls at a third location;
a second pump port along the one or more sidewalls at a fourth location generally opposing the second gas injector, the second pump port including a second plasma screen and a second pressure control valve;
a third gas injector formed in an opening through the one or more sidewalls below the first plasma screen of the first pump port and over the first pressure control valve to inject a third gas flow from below a surface of the workpiece from the first pump port; and
dual very high frequency (VHF) RF plasma source power generators having VHF-high frequency f1 and VHF-low frequency f2 coupled to at least one of a top electrode and a bottom electrode, where f1 is sufficiently high to produce a center-high non-uniform plasma ion density or electron density or reactive species density distribution over the workpiece, and f2 is sufficiently low to produce a center-low non-uniform plasma ion density or electron density or reactive species density distribution; and
a controller configured to operate a multiphase rotating cross-flow operation comprising at least:
a first phase comprising controlling the injection of, by the first gas injector, a first gas flow in a first direction generally parallel to and across a surface of the workpiece, and pumping out, by the first pump port, the first gas flow; and
a second phase comprising controlling the injection of, by the second gas injector, a second gas flow in a second direction generally parallel to and across the surface of the workpiece, and pumping out, by the second pump port, the second gas flow, wherein the second direction is different than the first direction.
12. The plasma treatment chamber of claim 11 , wherein the first gas flow, the second gas flow, and the third gas flow comprise a process gas mixture, an independent gas injection (IGI) mixture, or both, the process gas mixture and the IGI mixture comprising one or more of an etchant gas or deposition gas, a diluent gas, an oxidizer gas, a reducing gas, and a halogen-containing gas.