High luminance light emitting device and method for creating a high luminance light emitting device
A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.
1. A method for creating a light emitting device, the method comprising:
screen-printing an optically clear bonding layer onto a first surface of a light emitting semiconductor structure, the first surface being in a plane formed by a first dimension and a second dimension orthogonal to the first dimension, the light emitting semiconductor structure having a length extending in the first dimension and a length extending in the second dimension; and
bonding a wavelength converting structure using an optically clear bonding layer to the first surface of the light emitting semiconductor structure, the wavelength converting structure having a length extending in the first dimension longer than the length of the light emitting semiconductor structure in the first dimension, and the wavelength converting structure having a length extending in the second dimension shorter than the length of the light emitting semiconductor structure in the second dimension.
2. The method of claim 1 , further comprising:
pressing while bonding the wavelength converting structure to the first surface of the light emitting semiconductor structure to form optical extraction features formed of the optically clear bonding layer in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension or the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.
3. The method of claim 2 , further comprising:
controlling a size of the optical extraction features by controlling an amount of pressure applied when pressing the wavelength converting structure.
4. The method of claim 1 , further comprising:
dispensing an optical extraction feature in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension or the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension to form at least one optical extraction feature.
5. The method of claim 4 , further comprising:
flipping over the light emitting semiconductor structure and wavelength converting structure when dispensing the optical extraction feature.
6. The method of claim 4 , further comprising:
controlling a size of the at least one optical extraction feature by selecting the optical extraction material based on its viscosity and volume.
7. A method for creating an array of light emitting devices, the method comprising:
screen-printing an optically clear bonding layer onto a first surface of each of a plurality of light emitting semiconductor structures, the first surface being in a plane in a first dimension and a second dimension orthogonal to the first dimension, each of the plurality of light emitting semiconductor structures having a length extending in the first dimension and a length extending in the second dimension;
arranging the plurality of light emitting semiconductor structures linearly along the first dimension to form a linear array of light emitting semiconductor structures; and
bonding a wavelength converting structure using the optically clear bonding layer to the first surface of each of the plurality of light emitting semiconductor structures in the linear array of light emitting semiconductor structures, the wavelength converting structure having a length extending in the first dimension longer than the linear array of light emitting semiconductor structures, and the wavelength converting structure having a length extending in the second dimension shorter than the length of each of the plurality of light emitting semiconductor structures in the second dimension.
8. The method of claim 7 , further comprising:
pressing while bonding the wavelength converting structure to the first surface of each of the plurality of the light emitting semiconductor structure to form optical extraction features formed of the optically clear bonding layer 1 in at least one gap formed by the wavelength converting structure extending beyond the linear array of light emitting semiconductor structures in the first dimension or each of the plurality of the light emitting semiconductor structures extending beyond the wavelength converting structure in the second dimension.
9. The method of claim 7 , further comprising:
dispensing an optical extraction feature in at least one gap formed by the wavelength converting structure extending beyond the linear array of light emitting semiconductor structures in the first dimension or each of the plurality of the light emitting semiconductor structures extending beyond the wavelength converting structure in the second dimension.
10. The method of claim 9 , further comprising:
flipping over the linear array of light emitting semiconductor structures bonded to and wavelength converting structure when dispensing the optical extraction feature.