Solidly-mounted transversely-excited film bulk acoustic device

1. An acoustic resonator device comprising:

an acoustic resonator chip comprising:

a substrate;

a piezoelectric layer having front and back surfaces;

a first conductor pattern on the front surface of the piezoelectric layer, the first conductor pattern comprising a first plurality of contact pads and an interdigital transducer (IDT), the IDT and the piezoelectric layer configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the piezoelectric layer; and

an acoustic Bragg reflector between a surface of the substrate and the back surface of the piezoelectric layer, the acoustic Bragg reflector configured to reflect the shear primary acoustic mode;

an interposer comprising a second conductor pattern that includes a second plurality of contact pads on a surface of the interposer that faces the acoustic resonator chip; and

a continuous metal seal around a perimeter of the piezoelectric layer and perimeter of the interposer, the continuous metal seal being spaced apart from the first and second plurality of contact pads and configured to seal the IDT in a cavity of the acoustic resonator device,

wherein the interposer comprises a plurality of conductor layers with vias connecting the second plurality of contact pads to a third plurality of contact pads on a surface of the interposer that is not facing the IDT,

wherein each contact pad of the first plurality of contact pads is connected to a respective contact pad of the second plurality of contact pads, and

wherein at least one of the contact pads of the first plurality of contact pads is connected to at least one of the contact pads of the second plurality of contact pads by thermocompression or ultrasonic bonding.

2. The acoustic resonator device of claim 1 , wherein the acoustic Bragg reflector is configured to reflect the primary shear acoustic mode over a frequency range comprising a resonance frequency and an anti-resonance frequency of the acoustic resonator device.

3. The acoustic resonator device of claim 1 , wherein the seal comprises an adhesive material.

4. The acoustic resonator device of claim 1 , wherein the interposer comprises a silicon base; and the vias are through silicon vias.

5. The acoustic resonator device of claim 1 , wherein the interposer is a low temperature co-fired ceramic circuit card.

6. The acoustic resonator device of claim 1 , wherein the interposer is a printed circuit board.

7. The acoustic resonator device of claim 1 , wherein the interposer further comprises a recess facing the IDT.

8. A filter device comprising:

an acoustic resonator chip comprising:

a substrate;

a piezoelectric layer having front and back surfaces;

a first conductor pattern on the front surface of the piezoelectric layer, the first conductor pattern comprising a first plurality of contact pads and interdigital transducers (IDTs) of a plurality of acoustic resonators comprising a shunt resonator and a series resonator;

an acoustic Bragg reflector between a surface of the substrate and the back surface of the piezoelectric layer;

a first dielectric layer on and between interleaved fingers of the IDT of the shunt resonator and having a first thickness; and

a second dielectric layer on and between the interleaved fingers of the IDT of the series resonator and having a second thickness less than the first thickness;

an interposer comprising a second conductor pattern having a second plurality of contact pads on a surface of the interposer that faces the acoustic resonator chip; and

a continuous metal seal around a perimeter of the piezoelectric layer and a perimeter of the interposer, the continuous metal seal being spaced apart from the first and second plurality of contact pads and configured to seal the IDT in a cavity of the acoustic resonator device,

wherein the interposer comprises a plurality of conductor layers,

wherein each contact pad of the first plurality of contact pads is connected to a respective contact pad of the second plurality of contact pads, and

wherein at least one of the contact pads of the first plurality of contact pads is connected to at least one of the contact pads of the second plurality of contact pads by thermocompression or ultrasonic bonding.

9. The filter device of claim 8 , wherein:

the piezoelectric layer and all of the IDTs are configured such that radio frequency signals applied to the IDTs excite respective primary shear acoustic modes in the piezoelectric layer, and

the acoustic Bragg reflector is configured to reflect the respective primary shear acoustic modes excited by all of the IDTs.

10. The filter device of claim 9 , wherein the acoustic Bragg reflector is configured to reflect the primary shear acoustic modes excited by all of the IDTs over a frequency range comprising a resonance frequency and an anti-resonance frequency of all of the plurality of acoustic resonators.

11. The filter device of claim 8 , wherein the seal comprises an adhesive material.

12. The filter device of claim 8 , wherein the interposer further comprises vias connecting the second plurality of contact pads to a third plurality of contact pads on a surface of the interposer that is not facing the IDTs.

13. The filter device of claim 12 , wherein the interposer comprises a silicon base; and the vias are through silicon vias.

14. The filter device of claim 12 , wherein the interposer is a low temperature co-fired ceramic circuit card.

15. The filter device of claim 12 wherein the interposer is a printed circuit board.

16. The filter device of claim 8 , wherein the interposer further comprises a plurality of recesses in the surface of the interposer facing the IDTs of the plurality of acoustic resonators.

17. A filter device comprising:

an acoustic resonator chip comprising:

a substrate;

a piezoelectric layer having front and back surfaces;

a first conductor pattern on the front surface of the piezoelectric layer, the first conductor pattern comprising a first plurality of contact pads and interdigital transducers (IDTs) of a plurality of acoustic resonators comprising a shunt resonator and a series resonator;

an acoustic Bragg reflector between a surface of the substrate and the back surface of the piezoelectric layer;

a first dielectric layer on and between interleaved fingers of the IDT of the shunt resonator and having a first thickness; and

a second dielectric layer on and between the interleaved fingers of the IDT of the series resonator and having a second thickness less than the first thickness;

an interposer comprising a second conductor pattern that includes a second plurality of contact pads on a surface of the interposer that faces the acoustic resonator chip; and

a seal connecting the piezoelectric layer to the interposer to seal the shunt resonator and the series resonator within an internal cavity of filter device,

wherein each contact pad of the first plurality of contact pads is connected to a respective contact pad of the second plurality of contact pads,

wherein the interposer comprises a plurality of recesses in the surface of the interposer facing the IDTs of the plurality of acoustic resonators, and

wherein each of the plurality of recesses has a depth such that a distance from a bottom of each recess to the respective IDT is greater than or equal to 15 microns and less than or equal to 100 microns.