Integrated circuit chip including gate electrode with oblique cut surface, and manufacturing method of the same

1. An integrated circuit chip comprising:

a substrate;

first channel active regions on the substrate, and extending in a first direction;

second channel active regions on the substrate, and extending in the first direction, the second channel active regions being spaced apart from the first channel regions in a second direction intersecting the first direction;

a first gate electrode and a second gate electrode which intersect the second channel active regions;

a third gate electrode and a fourth gate electrode which intersect the first channel active regions; and

a contact electrode between the first gate electrode and the second gate electrode and between the third gate electrode and the fourth gate electrode, the contact electrode including

a stem section in a vertical direction,

a first branch section extending from the stem section in one direction and contacting a source/drain region on the first channel active regions, and

a second branch section extending from the stem section in the other direction and contacting a source/drain region on the second channel active regions,

wherein the first gate electrode and the third gate electrode overlap with each other in the second direction, and include edge portions having widths decreasing gradually as the first gate electrode and the third gate electrode extend toward facing ends thereof, respectively.

2. The integrated circuit chip according to claim 1 , wherein the first gate electrode and the third gate electrode include edge surfaces having widths in a direction different from the first direction and the second direction at the edge portions, respectively.

3. The integrated circuit chip according to claim 2 , wherein a distance of each of the edge surfaces from the contact electrode in the first direction increases gradually as the edge surface extends toward a corresponding one of the facing ends.

4. The integrated circuit chip according to claim 2 , wherein the stem section is between the first channel active regions and the second channel active regions.

5. The integrated circuit chip according to claim 1 , wherein the second gate electrode and the fourth gate electrode overlap with each other in the second direction, and include edge portions having widths decreasing gradually as the second gate electrode and the fourth gate electrode extend toward facing ends thereof, respectively.

6. The integrated circuit chip according to claim 5 , wherein

the second gate electrode and the fourth gate electrode include edge surfaces having widths in a direction different from the first direction and the second direction at the edge portions thereof, respectively; and

a distance of each of the edge surfaces from the contact electrode in the first direction increases gradually as the edge surface extends toward a corresponding one of the facing ends.

7. The integrated circuit chip according to claim 1 , wherein

a first cutting area overlapping with the first gate electrode and the third gate electrode in the second direction is defined between the first gate electrode and the third gate electrode; and

a width of the first cutting area decreases gradually as the first cutting area extends away from the contact electrode in the first direction.

8. The integrated circuit chip according to claim 7 , wherein

a second cutting area overlapping with the second gate electrode and the fourth gate electrode in the second direction while having a width decreasing gradually as the second cutting area extends away from the contact electrode in the first direction is defined between the second gate electrode and the fourth gate electrode; and

the stem section is between the first cutting area and the second cutting area.

9. The integrated circuit chip according to claim 8 , wherein an entire portion of the stem section overlaps with the first cutting area and the second cutting area in the first direction.

10. The integrated circuit chip according to claim 1 , wherein a thickness of the stem section in a vertical direction is greater than each thickness of the first branch section and the second branch section.

11. The integrated circuit chip according to claim 10 , wherein

the first branch section includes a portion overlapping with a portion of the third gate electrode in the first direction, except for the edge portion at the third gate electrode; and

the second branch section includes a portion overlapping with a portion of the first gate electrode in the first direction, except for the edge portion at the first gate electrode.

12. An integrated circuit chip comprising:

a substrate;

a front-end-of-line (FEOL) structure on the substrate;

a back-end-of-line (BEOL) structure on the FEOL structure, the BEOL structure including a plurality of wiring layers; and

bumps on the BEOL structure,

wherein the FEOL structure includes

first channel active regions protruding from the substrate, and extending in a first direction,

second channel active regions protruding from the substrate, and extending in the first direction, the second channel active regions being spaced apart from the first channel regions in a second direction intersecting the first direction,

a first gate electrode and a second gate electrode which intersect the second channel active regions,

a third gate electrode and a fourth gate electrode which intersect the first channel active regions, and

a contact electrode between the first gate electrode and the second gate electrode and between the third gate electrode and the fourth gate electrode, the contact electrode including

a stem section in a vertical direction,

a first branch section extending from the stem section in one direction and contacting a source/drain region on the first channel active regions, and

a second branch section extending from the stem section in the other direction and contacting a source/drain region on the second channel active regions,

the first gate electrode and the third gate electrode overlapping with each other in the second direction, and include edge portions having widths decreasing gradually as the first gate electrode and the third gate electrode extend toward facing ends thereof, respectively.

13. The integrated circuit chip according to claim 12 , wherein the FEOL structure includes

a first interlayer insulating film between the first gate electrode and the third gate electrode and between the second gate electrode and the fourth gate electrode;

a second interlayer insulating film on the first interlayer insulating film while covering the first to fourth gate electrodes; and

a third interlayer insulating film on the second interlayer insulating film.

14. The integrated circuit chip according to claim 13 , wherein the stem section extends vertically through the second interlayer insulating film.

15. The integrated circuit chip according to claim 13 , wherein the FEOL structure contacts at least one of the first to fourth gate electrodes, and extends vertically through the second interlayer insulating film.

16. The integrated circuit chip according to claim 15 , wherein

the FEOL structure further includes

a first connecting electrode electrically connected to the stem section and the plurality of wiring layers of the BEOL structure; and

a second connecting electrode electrically connected to a second contact electrode and the plurality of wiring layers of the BEOL structure, and

the first connecting electrode and the second connecting electrode extend vertically through the third interlayer insulating film.

17. The integrated circuit chip according to claim 12 , wherein

the first gate electrode and the third gate electrode include edge surfaces having widths in a direction different from the first direction and the second direction at the edge portions, respectively; and

a distance of each of the edge surfaces from the contact electrode in the first direction increases gradually as the edge surface extends toward a corresponding one of the facing ends.

18. The integrated circuit chip according to claim 12 , wherein

the second gate electrode and the fourth gate electrode overlap with each other in the second direction, and include edge portions having widths decreasing gradually as the second gate electrode and the fourth gate electrode extend toward facing ends thereof, respectively;

the second gate electrode and the fourth gate electrode include edge surfaces having widths in a direction different from the first direction and the second direction at the edge portions thereof, respectively; and

a distance of each of the edge surfaces from the contact electrode in the first direction increases gradually as the edge surface extends toward a corresponding one of the facing ends.

19. The integrated circuit chip according to claim 12 , wherein

a first cutting area overlapping with the first gate electrode and the third gate electrode in the second direction is defined between the first gate electrode and the third gate electrode;

a width of the first cutting area in the second direction decreases gradually as the first cutting area extends away from the contact electrode in the first direction,

a second cutting area overlapping with the second gate electrode and the fourth gate electrode in the second direction while having a width decreasing gradually as the second cutting area extends away from the contact electrode in the first direction is defined between the second gate electrode and the fourth gate electrode;

the stem section is between the first cutting area and the second cutting area; and

an entire portion of the stem section overlaps with the first cutting area and the second cutting area in the first direction.

20. An integrated circuit chip comprising:

a substrate;

first channel active regions on the substrate, and extending in a first direction;

second channel active regions on the substrate, and extending in the first direction, the second channel active regions being spaced apart from the first channel regions in a second direction intersecting the first direction;

a first gate electrode and a second gate electrode which intersect the second channel active regions;

a third gate electrode and a fourth gate electrode which intersect the first channel active regions; and

a contact electrode between the first gate electrode and the second gate electrode and between the third gate electrode and the fourth gate electrode, the contact electrode includes

a stem section in a vertical direction,

a first branch section extending from the stem section in one direction and contacting a source/drain region on the first channel active regions, and

a second branch section extending from the stem section in the other direction and contacting a source/drain region on the second channel active regions,

wherein the first gate electrode and the third gate electrode overlap with each other in the second direction, and include edge portions having widths decreasing gradually as the first gate electrode and the third gate electrode extend toward facing ends thereof, respectively,

wherein the second gate electrode and the fourth gate electrode overlap with each other in the second direction, and include edge portions having widths decreasing gradually as the second gate electrode and the fourth gate electrode extend toward facing ends thereof, respectively,

wherein a distance of each of the edge surfaces of the first to fourth gate electrodes from the contact electrode in the first direction increases gradually as the edge surface extends toward a corresponding one of the facing ends,

wherein the first branch section includes a portion overlapping with a portion of the third gate electrode in the first direction, except for the edge portion at the third gate electrode,

wherein the second branch section includes a portion overlapping with a portion of the first gate electrode in the first direction, except for the edge portion at the first gate electrode.