Nanostructured devices having perovskite nanocrystal layer for photodetection, optical memory, and neuromorphic functionality

1. A device comprising:

a perovskite nanocrystal (NC) layer;

a charge separating layer;

an insulating layer;

a gate electrode;

a cathode, and an anode, wherein:

the charge separating layer is positioned between the perovskite NC layer and the insulating layer,

the insulating layer is positioned between the charge separating layer and the gate electrode, and

the cathode and the anode both electrically contact the charge separating layer and the insulating layer.

2. The device of claim 1 , wherein the perovskite NC layer comprises a plurality of perovskite nanocrystals where each perovskite nanocrystal has an average characteristic width between about 1 nm and about 100 nm.

3. The device of claim 2 , wherein the plurality of perovskite nanocrystals comprise at least one of a formamidinium lead halide (FAPbX 3 ) or a cesium lead halide (CsPbX 3 ).

4. The device of claim 2 , wherein the plurality of perovskite nanocrystals comprise at least one of CsPbI 3 , CsPbBr 3 , or FAPbBr 3 .

5. The device of claim 1 , wherein the charge separating layer comprises at least one of a carbonaceous material, a semiconductor, a polymer, or a small molecule.

6. The device of claim 5 , wherein the carbonaceous material comprises at least one of a carbon nanotube, graphene, a graphene oxide, a fullerene, a carbon fiber, or graphite.

7. The device of claim 6 , wherein the carbon nanotube comprises at least one of a single-walled carbon nanotube (SWCNT), a double-walled carbon nanotube (DWCNT), or a multi-walled carbon nanotube (MWCNT).

8. The device of claim 1 , wherein the insulating layer comprises a metal oxide.

9. The device of claim 1 , wherein the device is configured to generate a current when the perovskite NC layer is exposed to a light.

10. The device of claim 9 , further comprising a light source configured to provide the light.

11. The device of claim 10 , wherein the light has a wavelength between about 200 nm and about 1500 nm.

12. The device of claim 10 , wherein the light provides a pulse energy between about 73 fJ and about 250 μJ.

13. The device of claim 1 , wherein device is characterized by an optical responsivity between about 2.57×10 3 A/W and about 1.1×10 9 A/W.

14. The device of claim 13 , wherein the optical responsivity corresponds to a fluence between about 30.7 mW/cm 2 and about 10 −8 mW/cm 2 , respectively.

15. The device of claim 1 , further comprising a source drain voltage electrically connecting the cathode and the anode.

16. The device of claim 15 , wherein the source drain voltage is configured to provide a voltage between about 0.01 V and about 10 V.

17. The device of claim 1 , further comprising a gate voltage electrically connected to the gate electrode.

18. The device of claim 17 , wherein the gate voltage is configured to provide a voltage between about −60 V and about 60 V.

19. The device of claim 1 , wherein the device is configured to operate as at least one of a photodetector, an optical switching device, or a neuromorphic switching device.

20. A method comprising:

applying at least one of a source drain voltage, a gate voltage, or a light pulse to a device, and

measuring a photocurrent generated by the device as a result of the applying, wherein the device comprises:

a perovskite nanocrystal (NC) layer;

a charge separating layer;

an insulating layer;

a gate electrode;

a cathode, and an anode.