Semiconductor device
A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.
1. A semiconductor device comprising:
a first insulating layer;
a second insulating layer;
a semiconductor layer; and
a first conductive layer,
wherein the semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer,
wherein the first insulating layer has a stacked-layer structure including a first insulating film and a second insulating film that are stacked in this order,
wherein the second insulating layer includes an oxide,
wherein the semiconductor layer includes indium and oxygen,
wherein the second insulating film includes a part in contact with the semiconductor layer,
wherein the second insulating film includes silicon and oxygen,
wherein the first insulating film includes silicon, nitrogen, and oxygen,
wherein a thickness of the first insulating film is greater than or equal to twice and less than or equal to 20 times as large as a thickness of the second insulating film,
wherein an amount of the oxygen included in the first insulating film is smaller than an amount of the oxygen included in the second insulating film, and
wherein an amount of the nitrogen included in the first insulating film is larger than an amount of nitrogen included in the second insulating film.
2. The semiconductor device according to claim 1 , further comprising a second conductive layer,
wherein the first insulating layer is positioned between the second conductive layer and the semiconductor layer,
wherein the second conductive layer includes a region overlapping with the semiconductor layer and the first conductive layer, and
wherein the first insulating film includes a part in contact with the second conductive layer.
3. The semiconductor device according to claim 1 ,
wherein the second insulating layer has a stacked-layer structure including a third insulating film, a fourth insulating film, and a fifth insulating film that are stacked in this order,
wherein the third insulating film includes a region in contact with the semiconductor layer, and
wherein the third insulating film, the fourth insulating film, and the fifth insulating film each include an oxide.
4. The semiconductor device according to claim 1 ,
wherein the semiconductor layer includes M and zinc,
wherein the M is one or more of aluminum, gallium, yttrium, and tin, and
wherein the semiconductor layer includes a region in which an indium content is higher than an M content.
5. The semiconductor device according to claim 1 , further comprising a metal oxide layer between the second insulating layer and the first conductive layer,
wherein the metal oxide layer includes one or more elements selected from aluminum, hafnium, tin, indium, gallium, and zinc.
6. A semiconductor device comprising:
a first insulating layer;
a second insulating layer;
a semiconductor layer; and
a first conductive layer,
wherein the semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer,
wherein the first insulating layer has a stacked-layer structure including a first insulating film and a second insulating film that are stacked in this order,
wherein the second insulating layer includes an oxide,
wherein the semiconductor layer includes indium and oxygen,
wherein the second insulating film includes a part in contact with the semiconductor layer,
wherein the first insulating film includes silicon and oxygen,
wherein the second insulating film includes silicon, nitrogen, and oxygen,
wherein a thickness of the second insulating film is greater than or equal to twice and less than or equal to 20 times as large as a thickness of the first insulating film,
wherein an amount of the oxygen included in the second insulating film is smaller than an amount of the oxygen included in the first insulating film, and
wherein an amount of the nitrogen included in the second insulating film is larger than an amount of nitrogen included in the first insulating film.
7. The semiconductor device according to claim 6 , further comprising a second conductive layer,
wherein the first insulating layer is positioned between the second conductive layer and the semiconductor layer,
wherein the second conductive layer includes a region overlapping with the semiconductor layer and the first conductive layer, and
wherein the first insulating film includes a part in contact with the second conductive layer.
8. The semiconductor device according to claim 6 ,
wherein the second insulating layer has a stacked-layer structure including a third insulating film, a fourth insulating film, and a fifth insulating film that are stacked in this order,
wherein the third insulating film includes a region in contact with the semiconductor layer, and
wherein the third insulating film, the fourth insulating film, and the fifth insulating film each include an oxide.
9. The semiconductor device according to claim 6 , further comprising a metal oxide layer between the second insulating layer and the first conductive layer,
wherein the metal oxide layer includes one or more elements selected from aluminum, hafnium, tin, indium, gallium, and zinc.