Semiconductor device
A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
1. A semiconductor device comprising:
a first member having a first surface and including a semiconductor region made from an elemental semiconductor;
a second member joined in surface contact with the first surface of the first member and including a radio-frequency amplifier circuit made from a compound semiconductor; and
a conductive protrusion projecting from the second member toward a side opposite to the first member,
wherein the first member includes a temperature measurement element configured to detect a temperature.
2. The semiconductor device according to claim 1 , wherein
the temperature measurement element is disposed at a location where the temperature measurement element overlaps the second member in plan view.
3. The semiconductor device according to claim 1 , wherein
the radio-frequency amplifier circuit includes a plurality of transistors interconnected in parallel,
the plurality of transistors are arranged in a first direction in plan view, and
the temperature measurement element is disposed, with respect to the first direction, in a range obtained by extending a range from a transistor at one end to a transistor at another end to both sides by distances between centers of the transistors at both ends and centers of transistors adjacent to the respective transistors at the both ends, and is disposed, with respect to a second direction orthogonal to the first direction in plan view, in a range where the plurality of transistors are disposed.
4. The semiconductor device according to claim 1 , wherein
the first member further includes a temperature detection circuit configured to convert a detected value provided by the temperature measurement element into a digital value and output the digital value to outside the semiconductor device.
5. The semiconductor device according to claim 1 , wherein
the first member further includes a bias control circuit configured to change, by using a detected value provided by the temperature measurement element, a bias current to be supplied to a transistor of the radio-frequency amplifier circuit.
6. The semiconductor device according to claim 5 , wherein
the bias control circuit is configured to perform control to increase the bias current as a temperature detected by the temperature measurement element increases.
7. The semiconductor device according to claim 5 , wherein
when a temperature detected by the temperature measurement element exceeds a predetermined acceptable upper limit, the bias control circuit is configured to stop supply of the bias current to the transistor of the radio-frequency amplifier circuit.
8. The semiconductor device according to claim 1 , wherein
the first member further includes
an input switch circuit configured to change, through switching of a switch, an attenuation ratio of a radio-frequency signal to be input to the radio-frequency amplifier circuit, and
an input switch control circuit configured to control the input switch circuit by using a detected value provided by the temperature measurement element.
9. The semiconductor device according to claim 1 , wherein
the first member further includes
an output switch circuit configured to output, from one output contact selected from among a plurality of output contacts, a radio-frequency signal output from the radio-frequency amplifier circuit, and
an output switch control circuit configured to control the output switch circuit by using a detected value provided by the temperature measurement element, and
wherein the output switch circuit includes an impedance adjustment circuit coupled to one of the output contacts.
10. The semiconductor device according to claim 1 , wherein
the radio-frequency amplifier circuit has a multi-stage configuration, and
the first member further includes
an interstage matching network inserted between stages of the radio-frequency amplifier circuit and having a variable impedance transformation ratio, and
an interstage matching control circuit configured to change an impedance transformation ratio of the interstage matching network by using a detected value provided by the temperature measurement element.
11. The semiconductor device according to claim 1 , wherein
the first member further includes
an output matching network coupled to an output port of the radio-frequency amplifier circuit and having a variable impedance transformation ratio, and
an output matching control circuit configured to change an impedance transformation ratio of the output matching network by using a detected value provided by the temperature measurement element.
12. The semiconductor device according to claim 2 , wherein
the radio-frequency amplifier circuit includes a plurality of transistors interconnected in parallel,
the plurality of transistors are arranged in a first direction in plan view, and
the temperature measurement element is disposed, with respect to the first direction, in a range obtained by extending a range from a transistor at one end to a transistor at another end to both sides by distances between centers of the transistors at both ends and centers of transistors adjacent to the respective transistors at the both ends, and is disposed, with respect to a second direction orthogonal to the first direction in plan view, in a range where the plurality of transistors are disposed.
13. The semiconductor device according to claim 2 , wherein
the first member further includes a temperature detection circuit configured to convert a detected value provided by the temperature measurement element into a digital value and output the digital value to outside the semiconductor device.
14. The semiconductor device according to claim 3 , wherein
the first member further includes a temperature detection circuit configured to convert a detected value provided by the temperature measurement element into a digital value and output the digital value to outside the semiconductor device.
15. The semiconductor device according to claim 2 , wherein
the first member further includes a bias control circuit configured to change, by using a detected value provided by the temperature measurement element, a bias current to be supplied to a transistor of the radio-frequency amplifier circuit.
16. The semiconductor device according to claim 6 , wherein
when a temperature detected by the temperature measurement element exceeds a predetermined acceptable upper limit, the bias control circuit is configured to stop supply of the bias current to the transistor of the radio-frequency amplifier circuit.
17. The semiconductor device according to claim 2 , wherein
the first member further includes
an input switch circuit configured to change, through switching of a switch, an attenuation ratio of a radio-frequency signal to be input to the radio-frequency amplifier circuit, and
an input switch control circuit configured to control the input switch circuit by using a detected value provided by the temperature measurement element.
18. The semiconductor device according to claim 2 , wherein
the first member further includes
an output switch circuit configured to output, from one output contact selected from among a plurality of output contacts, a radio-frequency signal output from the radio-frequency amplifier circuit, and
an output switch control circuit configured to control the output switch circuit by using a detected value provided by the temperature measurement element, and
wherein the output switch circuit includes an impedance adjustment circuit coupled to one of the output contacts.
19. The semiconductor device according to claim 2 , wherein
the radio-frequency amplifier circuit has a multi-stage configuration, and
the first member further includes
an interstage matching network inserted between stages of the radio-frequency amplifier circuit and having a variable impedance transformation ratio, and
an interstage matching control circuit configured to change an impedance transformation ratio of the interstage matching network by using a detected value provided by the temperature measurement element.
20. The semiconductor device according to claim 2 , wherein
the first member further includes
an output matching network coupled to an output port of the radio-frequency amplifier circuit and having a variable impedance transformation ratio, and
an output matching control circuit configured to change an impedance transformation ratio of the output matching network by using a detected value provided by the temperature measurement element.