Semiconductor device interconnection systems and methods

1. A method of interconnecting a first substrate to a second substrate, the method comprising:

forming a first plurality of contacts on the first substrate;

forming an insulative layer on the first substrate;

forming a second plurality of contacts on the second substrate;

aligning the first plurality of contacts with the second plurality of contacts; and

joining the first plurality of contacts to the second plurality of contacts based on the aligning to form interconnects between the first substrate and the second substrate, wherein, when the first and second substrates are joined, at least a portion of each of the interconnects is surrounded by the insulative layer, wherein the joining comprises pressing each of the second plurality of contacts against a corresponding one of the first plurality of contacts, and wherein the first plurality of contacts is formed on the first substrate after the insulative layer is formed on the first substrate.

2. The method of claim 1 , wherein each of the first plurality of contacts provides a substantially flat surface to receive a corresponding one of the second plurality of contacts, and wherein each of the second plurality of contacts is harder than a corresponding one of the first plurality of contacts to penetrate the substantially flat surface of the corresponding one of the first plurality of contacts during the joining.

3. The method of claim 1 , wherein the joining comprises:

applying heat and/or pressure to the first plurality of contacts and/or the second plurality of contacts; and

placing the first plurality of contacts in contact with the second plurality of contacts to form the interconnects.

4. The method of claim 1 , further comprising forming a first plurality of pads on the first substrate, wherein each of the first plurality of contacts is on a corresponding one of the first plurality of pads, wherein the insulative layer is a dielectric layer or a photoresist layer, wherein the second plurality of contacts is harder than the first plurality of contacts, wherein the first substrate is part of a detector circuit, and wherein the second substrate is part of a readout circuit.

5. A system formed at least in part by the method of claim 1 , the system comprising:

a first semiconductor device comprising the first substrate; and

a second semiconductor device comprising the second substrate, wherein each of the interconnects between the first semiconductor device and the second semiconductor device is surrounded by a corresponding portion of the insulative layer.

6. The system of claim 5 , wherein:

the first semiconductor device further comprises the first plurality of contacts and the insulative layer,

the second semiconductor device further comprises the second plurality of contacts,

the first semiconductor device is a detector circuit, and

the second semiconductor device is a readout circuit.

7. The method of claim 1 , wherein the insulative layer comprises a plurality of cavities defined therein and a plurality of channels defined therein, the method further comprising disposing underfill material in the plurality of channels.

8. The method of claim 1 , wherein the insulative layer comprises:

a plurality of cavities defined therein and arranged in an array having a first direction and a second direction perpendicular to the first direction; and

a plurality of channels defined therein and arranged at an angle relative to the first and second directions.

9. A method of interconnecting a first substrate to a second substrate, the method comprising:

forming a first plurality of contacts on the first substrate;

forming an insulative layer on the first substrate, wherein the forming the insulative layer comprises:

depositing an insulative material on the second substrate; and

etching the insulative material to form the insulative layer having a plurality of cavities defined therein and a plurality of channels defined therein, wherein each of the first plurality of contacts is in a corresponding one of the plurality of cavities;

forming a second plurality of contacts on the second substrate; and

joining the first plurality of contacts to the second plurality of contacts to form interconnects between the first substrate and the second substrate, wherein, when the first and second substrates are joined, at least a portion of each of the interconnects is surrounded by the insulative layer.

10. The method of claim 9 , wherein each of the plurality of channels extends from and/or between one or more of the plurality of cavities.

11. The method of claim 9 , wherein the plurality of cavities are arranged in an array having a first direction and a second direction perpendicular to the first direction, and wherein the plurality of channels are arranged at an angle relative to the first and second directions.

12. The method of claim 9 , further comprising disposing underfill material in the plurality of channels.

13. The method of claim 12 , wherein the underfill material comprises epoxy, and wherein the disposing comprises wicking the epoxy through the plurality of channels, and wherein the method further comprises disposing the underfill material at least partially in the plurality of cavities.

14. An imaging system comprising:

a first semiconductor device comprising a first substrate, a first plurality of pads, and an insulative layer, wherein the insulative layer comprises a plurality of cavities defined therein and a plurality of channels defined therein;

a second semiconductor device comprising a second substrate and a second plurality of pads; and

a plurality of interconnects connected to the first semiconductor device and the second semiconductor device, wherein each of the plurality of interconnects is surrounded by a corresponding one of the plurality of cavities, wherein each of the plurality of interconnects couples one of the first plurality of pads to one of the second plurality of pads,

wherein:

the first semiconductor device comprises a detector circuit; and

the second semiconductor device comprises a readout circuit.

15. The imaging system of claim 14 , wherein the first semiconductor device further comprises a first plurality of contacts, wherein the second semiconductor device further comprises a second plurality of contacts, and wherein each of the first plurality of contacts is in contact with a corresponding one of the second plurality of contacts to form a corresponding one of the plurality of interconnects.

16. The imaging system of claim 14 , wherein each of the plurality of channels extends from and/or between one or more of the plurality of cavities.

17. The imaging system of claim 14 , wherein the plurality of cavities are arranged in an array having a first direction and a second direction perpendicular to the first direction, and wherein the plurality of channels are arranged along a direction diagonal relative to the first and second directions.

18. The imaging system of claim 14 , further comprising an underfill material disposed in the plurality of channels, wherein the underfill material comprises epoxy, and wherein the insulative layer is a dielectric layer or a photoresist layer.

19. The imaging system of claim 14 , further comprising an underfill material disposed in the plurality of channels and at least partially in the plurality of cavities.

20. The imaging system of claim 14 , wherein the insulative layer is disposed on the first substrate, and wherein no insulative layer is disposed on the second substrate such that a surface of the insulative layer disposed on the first substrate faces a surface of the second substrate.