Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
Acoustic resonator devices and acoustic filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern comprising an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.
1. A bulk acoustic wave resonator, comprising:
a piezoelectric layer; and
an interdigital transducer (IDT) having interleaved fingers on the piezoelectric layer,
wherein a ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.45, wherein the pitch is a center-to-center spacing between two adjacent interleaved fingers, and
wherein a thickness of at least one the interleaved fingers is less than 0.5 times the thickness of the piezoelectric layer.
2. The bulk acoustic wave resonator of claim 1 , wherein the piezoelectric layer is lithium niobite or lithium tantalate.
3. The bulk acoustic wave resonator of claim 2 , wherein the piezoelectric layer is one of Z-cut, rotated Z-cut, and rotated Y-cut.
4. The bulk acoustic wave resonator of claim 1 , wherein the IDT is one or more of aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, and molybdenum.
5. The bulk acoustic wave resonator of claim 1 , wherein a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the piezoelectric layer.
6. The bulk acoustic wave resonator of claim 5 , wherein at least a portion of the piezoelectric layer forms a diaphragm over a cavity of the bulk acoustic wave resonator, and wherein the IDT is disposed on the diaphragm.
7. The bulk acoustic wave resonator of claim 1 , further comprising the substrate, wherein the piezoelectric layer is attached to the substrate either directly or via one or more intermediate layers.
8. The bulk acoustic wave resonator of claim 7 , wherein the substrate is one or more of silicon, sapphire, and quartz.
9. The bulk acoustic wave resonator of claim 7 , wherein the cavity is formed in any combination of the substrate and the one or more intermediate layers.
10. The bulk acoustic wave resonator of claim 7 , wherein the one or more intermediate layers comprises one or more dielectric layers.
11. A filter device, comprising:
a plurality of bulk acoustic wave resonators, wherein at least one of the plurality of bulk acoustic resonators comprises:
a piezoelectric layer; and
an interdigital transducers (IDT) having interleaved fingers on the piezoelectric layer,
wherein a duty factor is greater than or equal to 0.12 and less than or equal to 0.45, and
wherein a thickness of at least one of the interleaved fingers is less than 0.5 times a thickness of the piezoelectric layer.
12. The filter device of claim 11 , wherein the piezoelectric layer is lithium niobite or lithium tantalate.
13. The filter device of claim 12 , wherein the piezoelectric layer is one of Z-cut, rotated Z-cut, and rotated Y-cut.
14. The filter device of claim 11 , wherein the plurality of IDTs are each one or more of aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, and molybdenum.
15. The filter device of claim 11 , wherein a radio frequency signal applied to each of the plurality of IDTs excites a primary shear acoustic mode within the respective piezoelectric layer.
16. The filter device of claim 11 , wherein, for the at least one bulk acoustic resonator, at least a portion of the piezoelectric layer forms a diaphragm over a cavity of the at least one bulk acoustic wave resonator.
17. The filter device of claim 11 , wherein the at least one bulk acoustic resonator further comprises a substrate and a back surface of the piezoelectric layer is attached to a surface of the substrate either directly or via one or more intermediate layers.
18. The filter device of claim 17 , wherein the substrate is one or more of silicon, sapphire, and quartz.
19. The filter device of claim 17 , wherein a cavity is disposed below the respective IDT in each of the at least one bulk acoustic wave resonators.
20. The filter device of claim 11 , wherein the plurality of bulk acoustic resonators are connected in a ladder filter circuit.
21. The bulk acoustic wave resonator of claim 1 , wherein the two adjacent interleaved fingers extend from different busbars of the IDT.