Micro-LED structure and micro-LED chip including same
A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the first type conductive layer. An edge of the light emitting layer is aligned with an edge of the second type conductive layer. The edge of the second type conductive layer extends along the horizontal level away from the edge of the first type conductive layer.
1. A micro-LED structure, comprising:
a first type conductive layer;
a second type conductive layer stacked on the first type conductive layer; and
a light emitting layer formed between the first type conductive layer and the second type conductive layer,
wherein the light emitting layer extends along a horizontal level from an edge of the first type conductive layer,
an edge of the light emitting layer is aligned with an edge of the second type conductive layer, and
the edge of the second type conductive layer extends along the horizontal level away from the edge of the first type conductive layer.
2. The micro-LED structure according to claim 1 , further comprising:
a top spacer formed on a top surface of the light emitting layer; and
a bottom spacer formed on a bottom surface of the light emitting layer,
wherein an edge of the top spacer is aligned with the edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer.
3. The micro-LED structure according to claim 2 , wherein a thickness of the top spacer is larger than a thickness of the light emitting layer, and a thickness of the bottom spacer is larger than the thickness of the light emitting layer.
4. The micro-LED structure according to claim 2 , further comprising:
a top isolation layer surrounding the light emitting layer; and
a microlens formed on the second type conductive layer and a top surface of the top isolation layer.
5. The micro-LED structure according to claim 1 , wherein a top area of the second type conductive layer is smaller than a bottom area of the second type conductive layer, and
the edge of the light emitting layer is aligned with a bottom edge of the second type conductive layer.
6. The micro-LED structure according to claim 1 ,
wherein the light emitting layer includes only one pair of quantum well layers, or multiple pairs of quantum well layers.
7. The micro-LED structure according to claim 1 , further comprising a reflective structure formed surrounding the first type conductive layer.
8. The micro-LED structure according to claim 7 , wherein the reflective structure is attached on a sidewall of the first type conductive layer, and
the micro-LED structure further comprises a bottom connection structure 04 formed under the first type conductive layer and electrically connected with the first type conductive layer.
9. The micro-LED structure according to claim 8 , further comprising a substrate under the first type conductive layer and electrically connected with the bottom connection structure by a connecting pad in the substrate.
10. The micro-LED structure according to claim 9 , wherein the substrate includes an IC circuit.
11. The micro-LED structure according to claim 9 , wherein the reflective structure on the sidewall of the first type conductive layer is inclined relative to a top surface of the substrate, and an inclined angle of the reflective structure is approximately 30° to approximately 75° relative to the top surface of the substrate.
12. The micro-LED structure according to claim 8 , wherein the bottom connection structure is made of a reflective and electrically conductive material.
13. The micro-LED structure according to claim 8 , wherein the reflective structure on the sidewall of the first type conductive layer has a curved surface.
14. The micro-LED structure according to claim 8 , wherein the reflective structure at the sidewall of the first type conductive layer is made of an ODR (omnidirectional reflector) structure or a DBR (distributed bragg reflection) structure.
15. The micro-LED structure according to claim 7 , wherein the reflective structure is attached both on a sidewall surface and a bottom surface of the first type conductive layer.
16. The micro-LED structure according to claim 15 , wherein the reflective structure on the bottom surface of the first type conductive layer is electrically conductive, and
the micro-LED structure further comprises a bottom connection structure formed at a bottom of the reflective structure and is electrically connected with the reflective structure.
17. The micro-LED structure according to claim 7 , wherein the reflective structure is configured to focus light on the second type conductive layer.
18. The micro-LED structure according to claim 1 , further comprising a reflective structure attached on a bottom surface of the first type conductive layer.
19. The micro-LED structure according to claim 18 , wherein the reflective structure is electrically conductive, and
the micro-LED structure further comprises a bottom connection structure formed at a bottom of the reflective structure and electrically connected with the reflective structure.
20. The micro-LED structure according to claim 1 , further comprising an isolation layer formed surrounding the first type conductive layer and under the light emitting layer, the isolation layer being made of a light absorption material.