Transversely-excited film bulk acoustic resonator with multi-mark electrodes and optimized electrode thickness
Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern including a multi-mark interdigital transducer (IDT), with fingers of the IDT on the diaphragm. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.
1. An acoustic resonator, comprising:
a piezoelectric layer having front and back surfaces, a portion of the piezoelectric layer forming a diaphragm; and
a conductor pattern on the front surface, the conductor pattern comprising a multi-mark interdigital transducer (IDT), fingers of the IDT on the diaphragm,
wherein a thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric layer and less than or equal to 2.5 times the thickness of the piezoelectric layer.
2. The acoustic resonator of claim 1 , wherein the piezoelectric layer is lithium niobite or lithium tantalate.
3. The acoustic resonator of claim 2 , wherein the piezoelectric layer is one of Z-cut, rotated Z-cut, and rotated Y-cut.
4. The acoustic resonator of claim 1 , wherein the IDT is one or more of aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, and molybdenum.
5. The acoustic resonator of claim 1 , wherein a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer.
6. The acoustic resonator of claim 5 , wherein the primary shear acoustic mode is a bulk shear acoustic mode in which acoustic energy propagates along a direction substantially orthogonal to the front and back surfaces of the piezoelectric layer and is transverse to a direction of an electric field created by the fingers of the IDT.
7. The acoustic resonator of claim 1 further comprising the substrate, wherein the back surface is attached to a surface of the substrate either directly or via one or more intermediate layers, and wherein the diaphragm is over a cavity in at least one of the substrate and the one or more intermediate layers.
8. The acoustic resonator of claim 7 , wherein the substrate is one or more of silicon, sapphire, and quartz.
9. The acoustic resonator of claim 7 , wherein the cavity is a recess in the at least one of the substrate and the one or more intermediate layers.
10. The acoustic resonator of claim 7 , wherein the cavity extends through a thickness of the at least one of the substrate and the one or more intermediate layers.
11. A filter device, comprising:
a plurality of acoustic resonators that each comprise:
a piezoelectric layer having front and back surfaces and including a portion that forms a diaphragm; and
a conductor pattern on the front surface, the conductor pattern comprising a multi-mark interdigital transducer (IDT) having interleaved fingers on the diaphragm,
wherein a thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric layer and less than or equal to 2.5 times the thickness of the piezoelectric layer.
12. The filter device of claim 11 , wherein the piezoelectric layer of each of the plurality of acoustic resonators is lithium niobite or lithium tantalate.
13. The filter device of claim 12 , wherein the piezoelectric layer of each of the plurality of acoustic resonators is one of Z-cut, rotated Z-cut, and rotated Y-cut.
14. The filter device of claim 11 , wherein the IDT of each of the plurality of acoustic resonators is one or more of aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, and molybdenum.
15. The filter device of claim 11 , wherein a radio frequency signal applied to the IDT of each of the plurality of acoustic resonators excites a respective primary shear acoustic mode within the respective piezoelectric layer.
16. The filter device of claim 14 , wherein the primary shear acoustic mode is a bulk shear acoustic mode in which acoustic energy propagates along a direction substantially orthogonal to the front and back surfaces of the respective piezoelectric layer and is transverse to a direction of an electric field created by the fingers of the respective IDT.
17. The filter device of claim 11 , wherein each of the plurality of acoustic resonators further comprises a substrate, wherein the back surface is attached to a surface of the substrate either directly or via one or more intermediate layers, and wherein the diaphragm over a cavity in at least one of the substrate and the one or more intermediate layers.
18. The filter device of claim 17 , wherein the substrate of each of the plurality of acoustic resonators is one or more of silicon, sapphire, and quartz.
19. The filter device of claim 17 , wherein the respective cavities are recesses in the at least one of the substrate and the one or more intermediate layers.
20. The filter device of claim 17 , wherein the respective cavities extend through a thickness of the at least one of the substrate and the one or more intermediate layers.