Domain-based access in a memory device
Methods, systems, and devices related to domain-based access in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory array may be organized according to domains, which may refer to various configurations or collections of access lines, and selections thereof, of different portions of the memory array. In various examples, a memory device may determine a plurality of domains for a received access command, or an order for accessing a plurality of domains for a received access command, or combinations thereof, based on an availability of the signal development cache.
1. A method, comprising:
receiving, at a memory device, a read access command;
obtaining, by the memory device in response to receiving the read access command, signal states of respective memory cells associated with the read access command, wherein each memory cell is associated with a respective domain of a plurality of domains of a memory array;
developing, by the memory device, a plurality of memory signals at respective signal development components associated with the plurality of domains, wherein each memory signal is associated with a corresponding signal state of the respective memory cell, and wherein the plurality of memory signals occur over overlapping time intervals; and
generating, by the memory device, a plurality of output signals associated with the plurality of memory signals, wherein each output signal is associated with a respective one of the memory signals, and wherein the plurality of output signals occur over non-overlapping time intervals.
2. The method of claim 1 , wherein each output signal is shorter in duration than the memory signal associated with the output signal.
3. The method of claim 1 , wherein developing the plurality of memory signals comprises selectively coupling a respective signal development component with a memory cell of a domain of the plurality of domains.
4. The method of claim 1 , wherein developing the plurality of memory signals comprises sharing charge between a memory cell, a digit line, and a respective signal development component associated with a domain of the plurality of domains.
5. The method of claim 1 , wherein generating the plurality of output signals comprises:
selectively coupling the respective signal development components with a sense amplifier; and
outputting an output signal from the sense amplifier.
6. The method of claim 5 , wherein generating the plurality of output signals comprises selectively sharing charge between the respective signal development components and the sense amplifier.
7. The method of claim 5 , wherein during the development of each memory signal of the plurality of memory signals, the respective signal development component is selectively decoupled from the sense amplifier.
8. The method of claim 5 , wherein the respective signal development components are multiplexed with the sense amplifier.
9. The method of claim 1 , further comprising:
performing, by the memory device, a rewrite operation of a memory cell associated with a domain of the plurality of domains.
10. The method of claim 9 , wherein performing the rewrite operation comprises sharing charge between a memory cell, a digit line, and the respective signal development component of the domain.
11. A method, comprising:
receiving, at a memory device, a write access command;
generating, by the memory device, a plurality of data signals associated with data corresponding to the write access command, wherein each data signal is associated with a respective domain of a plurality of domains, and wherein the plurality of data signals occur over non-overlapping time intervals;
developing, by the memory device, a plurality of cell access signals using respective signal development components based at least in part on the plurality of data signals, wherein each cell access signal is associated with a respective domain of the plurality of domains, and wherein the plurality of cell access signals occur over overlapping time intervals; and
storing, by the memory device, signal states to respective memory cells of the respective domains, based at least on the plurality of cell access signals.
12. The method of claim 11 , wherein each data signal is shorter in duration than the cell access signal associated with the data signal.
13. The method of claim 11 , wherein developing the plurality of cell access signals comprises selectively coupling a respective signal development component with a memory cell of a domain of the plurality of domains.
14. The method of claim 11 , wherein developing the plurality of cell access signals comprises sharing charge between a memory cell, a digit line, and a respective signal development component associated with a domain of the plurality of domains.
15. The method of claim 11 , wherein generating the plurality of data signals comprises:
inputting an input signal associated with the data corresponding to the write access command into a sense amplifier; and
selectively coupling the sense amplifier to the respective signal development components.
16. The method of claim 15 , wherein generating the plurality of data signals comprises selectively sharing charge between the sense amplifier and the respective signal development components.
17. The method of claim 15 , wherein during the development of each memory signal of the plurality of memory signals, the respective signal development component is selectively decoupled from the sense amplifier.
18. The method of claim 15 , wherein the respective signal development components are multiplexed with the sense amplifier.
19. An apparatus, comprising:
a memory array; and
a controller coupled with the memory array and configured to cause the apparatus to:
obtain, in response to receiving a read access command, signal states of respective memory cells associated with the read access command, wherein each memory cell is associated with a respective domain of a plurality of domains of the memory array;
develop a plurality of memory signals at respective signal development components associated with the plurality of domains, wherein each memory signal is associated with a corresponding signal state of the respective memory cell, and wherein the plurality of memory signals occur over overlapping time intervals; and
generate a plurality of output signals associated with the plurality of memory signals, wherein each output signal is associated with a respective one of the memory signals, and wherein the plurality of output signals occur over non-overlapping time intervals.
20. The apparatus of claim 19 , wherein, to develop the plurality of memory signals, the controller is configured to cause the apparatus to selectively couple a respective signal development component with a memory cell of a domain of the plurality of domains.