Semiconductor device
A semiconductor device has an off transistor ( 10 ) in which a gate electrode ( 3 ) and a source region ( 6 ) of an N-type MOS transistor are connected to a ground terminal and a drain region ( 5 ) is connected to an external signal terminal ( 100 b ). In the off transistor ( 10 ), the gate electrode ( 3 ) is extensively provided over a portion or entirety of the drain region ( 5 ) in addition to a channel region. A capacitance (C 2 ) formed between the gate electrode ( 3 ) and the drain region ( 5 ) may be greater than a capacitance (C 1 ) generated between the gate electrode ( 3 ) and a ground potential.
1. A semiconductor device, comprising:
an off transistor in which a gate electrode and a source region of a MOS transistor are connected to a first power terminal or a second power terminal, and a drain region is connected to an external signal terminal,
wherein in the off transistor, the gate electrode is extensively provided over a portion or entirety of the drain region in addition to a channel region, and
a capacitance formed between the gate electrode and the drain region is greater than a capacitance generated between the gate electrode and a ground potential.
2. The semiconductor device according to claim 1 , wherein the gate electrode is provided with an opening at a place covering the drain region.
3. The semiconductor device according to claim 2 , wherein a shape of the opening is a rectangular shape in plan view.
4. The semiconductor device according to claim 3 , wherein the shape of the opening in plan view has a recess part in a portion of the rectangular shape.
5. The semiconductor device according to claim 1 , wherein the gate electrode is provided with an opening at a place covering the drain region.
6. The semiconductor device according to claim 5 , wherein a shape of the opening is a rectangular shape in plan view.
7. The semiconductor device according to claim 6 , wherein the shape of the opening in plan view has a recess part in a portion of the rectangular shape.