Coupled guard rings for edge termination
A semiconductor device includes an active device region and a plurality of guard rings arranged in a first concentric pattern surrounding the active device region. The semiconductor device also includes a plurality of junctions arranged in a second concentric pattern surrounding the active device region. At least one of the plurality of junctions is arranged between two adjacent guard rings of the plurality of guard rings, and the plurality of junctions have a different resistivity than the plurality of guard rings. The semiconductor device further includes a plurality of coupling paths. At least one of the plurality of coupling paths is arranged to connect two adjacent guard rings of the plurality of guard rings.
1. A semiconductor device comprising:
a drift region characterized by a first conductivity type;
a field region coupled to the drift region and characterized by a second conductivity type opposite to the first conductivity type;
an active device region coupled to the drift region and surrounded by the field region;
a plurality of guard rings arranged in a first concentric pattern in the field region surrounding the active device region and characterized by the second conductivity type;
a plurality of junctions arranged in a second concentric pattern in the field region surrounding the active device region and characterized by the second conductivity type, wherein at least one of the plurality of junctions is arranged between two adjacent guard rings of the plurality of guard rings, and the plurality of junctions have a different resistivity than the plurality of guard rings; and
a plurality of coupling paths characterized by the second conductivity type, wherein at least one of the plurality of coupling paths is arranged to connect two adjacent guard rings of the plurality of guard rings.
2. The semiconductor device of claim 1 , wherein at least another one of the plurality of coupling paths is arranged to connect a first one of the plurality of guard rings with the active device region.
3. The semiconductor device of claim 1 , wherein a top surface of the at least one of the plurality of coupling paths is arranged parallel to a top surface of the plurality of guard rings.
4. The semiconductor device of claim 3 , wherein a width of the at least one of the plurality of coupling paths decreases from the top surface of the at least one of the plurality of coupling paths to a bottom of the at least one of the plurality of coupling paths.
5. The semiconductor device of claim 1 , wherein the plurality of junctions have a higher resistivity than the plurality of guard rings.
6. The semiconductor device of claim 1 , wherein a top surface of the at least one of the plurality of coupling paths is arranged below a top surface of the plurality of guard rings.
7. The semiconductor device of claim 6 , wherein a width of the at least one of the plurality of coupling paths decreases from the top surface of the at least one of the plurality of coupling paths to a bottom of the at least one of the plurality of coupling paths.
8. The semiconductor device of claim 1 , wherein a depth of the at least one of the plurality of coupling paths is smaller than a depth of the plurality of guard rings.
9. The semiconductor device of claim 1 , further comprising a plurality of metal regions that are arranged on a top surface of the plurality of guard rings.
10. A semiconductor device comprising:
a III-nitride drift region characterized by a first conductivity type;
a III-nitride field region coupled to the III-nitride drift region and characterized by a second conductivity type opposite to the first conductivity type;
a III-nitride active device region coupled to the III-nitride drift region and surrounded by the III-nitride field region;
a plurality of guard rings arranged in a first concentric pattern in the III-nitride field region surrounding the III-nitride active device region and characterized by the second conductivity type;
a plurality of junctions arranged in a second concentric pattern in the III-nitride field region surrounding the III-nitride active device region and characterized by the second conductivity type, wherein at least one of the plurality of junctions is arranged between two adjacent guard rings of the plurality of guard rings, and the plurality of junctions comprise a higher resistivity than the plurality of guard rings; and
a plurality of coupling paths characterized by the second conductivity type, wherein at least one of the plurality of coupling paths is arranged to connect two adjacent guard rings of the plurality of guard rings.
11. The semiconductor device of claim 10 , wherein:
each of the plurality of junctions are doped with a neutralization species that decreases conductivity of the plurality of junctions.
12. The semiconductor device of claim 10 , wherein a top surface of the at least one of the plurality of coupling paths is arranged below a top surface of the plurality of guard rings.
13. The semiconductor device of claim 10 , further comprising:
a substrate characterized by the first conductivity type;
wherein:
the III-nitride drift region comprises an n-GaN epitaxial layer coupled to the substrate; and
the III-nitride field region and the III-nitride active device region comprise a regrown p-GaN layer.