FACET SUPPRESSION OF GALLIUM ARSENIDE SPALLING USING NANOIMPRINT LITHOGRAPHY AND METHODS THEREOF
Described herein are devices and methods for facet suppression in spalling of (100) GaAs by redirecting the fracture front along features created by buried nanoimprint lithography (NIL)-patterned SiO 2 . Successful facet suppression using patterns that result in favorable fracture along the SiO 2 /GaAs interface and/or through voids formed above the pattern in the coalesced layer is provided. These results allow for the design of patterns that would successfully interrupt the fracture front and suppress faceting that, combined with growth optimization, define a path forward for this technology to be used as a way to reduce the need for repreparation of the (100) GaAs substrate surface after spalling.
1 . A device for manufacturing a semiconductor comprising:
a patterned nanoimprint lithography layer capable of reducing faceting during controlled spalling.
2 . The device of claim 1 , wherein said semiconductor comprises GaAs.
3 . The device of claim 1 , wherein said patterned nanoimprint lithography layer comprises SiO 2 .
4 . The device of claim 1 , wherein said patterned nanoimprint lithography layer comprises elongated structures.
5 . The device of claim 1 , wherein said elongated structures are oriented parallel to a [110] direction of a substrate of said semiconductor.
6 . The device of claim 5 , wherein said elongated structures have a width selected from the range of 100 nm to 500 nm.
7 . The device of claim 5 , wherein said elongated structures have a width selected from the range of 200 nm to 300 nm.
8 . The device of claim 5 , wherein said elongated structures have a height selected from the range of 25 nm to 1000 nm.
9 . The device of claim 5 , wherein said elongated structures have a height selected from the range of 50 nm to 250 nm.
10 . The device of claim 5 , wherein said elongated structures have an offset selected from the range of 100 nm to 500 nm.
11 . The device of claim 5 , wherein said elongated structures have an offset selected from the range of 200 nm to 300 nm.
12 . The device of claim 5 , wherein said elongated structures have a substantially rectangular cross section.
13 . The device of claim 1 , wherein said patterned nanoimprint lithography layer is reusable.
14 . A method comprising:
providing a patterned nanoimprint lithography layer;
growing a semiconductor layer on a surface of the patterned nanoimprint lithography layer;
removing the patterned nanoimprint layer, wherein the step of reducing does not generate spalling.
15 . The method of claim 14 , wherein said patterned nanoimprint lithography layer comprises elongated structures.
16 . The method of claim 15 , wherein said elongated structures are oriented parallel to a direction of a substrate of said semiconductor.
17 . The method of claim 15 , wherein said elongated structures have a width selected from the range of 100 nm to 500 nm.
18 . The method of claim 15 , said elongated structures have a substantially rectangular cross section.
19 . The method of claim 14 , wherein said patterned nanoimprint lithography layer is reusable.