Semiconductor device
A semiconductor device includes: a semiconductor module including a switching device, a first wiring connected to the switching device, a second wiring positioned adjacent to the first wiring and generating induced electromotive force according to a change in an electric current flowing in the first wiring, and a sealing material sealing the switching device, the first wiring and the second wiring, wherein both of one end and the other end of the second wiring are exposed from the sealing material; a substrate including a GND electrode connected to the one end and on which the semiconductor module is mounted; and a diode rectifying the induced electromotive force output from the other end.
1. A semiconductor device comprising:
a semiconductor module including a switching device, a first wiring connected to the switching device, a second wiring positioned adjacent to the first wiring and generating induced electromotive force according to a change in an electric current flowing in the first wiring, and a sealing material sealing the switching device, the first wiring and the second wiring, wherein both of one end and the other end of the second wiring are exposed from the sealing material;
a substrate including a GND electrode connected to the one end and on which the semiconductor module is mounted; and
a diode rectifying the induced electromotive force output from the other end.
2. The semiconductor device according to claim 1 , wherein the first wiring is a positive electrode terminal or a negative electrode terminal of the semiconductor module.
3. The semiconductor device according to claim 1 , wherein the second wiring includes two or more wirings having different distances from the first wiring.
4. The semiconductor device according to claim 1 , wherein the second wiring includes an inductor.
5. The semiconductor device according to claim 1 , further comprising a capacitor accumulating output power of the diode.
6. The semiconductor device according to claim 1 , further comprising a rechargeable battery charging output power of the diode.
7. The semiconductor device according to claim 1 , wherein the diode is provided on an inside of the semiconductor module.
8. The semiconductor device according to claim 5 , wherein the GND electrode is a GND electrode on a control side to which the capacitor is connected.
9. The semiconductor device according to claim 1 , wherein the GND electrode is a GND electrode on a power side to which a negative electrode terminal of the semiconductor module is connected.
10. The semiconductor device according to claim 1 , wherein the switching device is formed of a wide-band-gap semiconductor.