BAW RESONATOR WITH REDUCED LATERAL MODES
A BAW resonator (RN) with reduced lateral modes is provided. The resonator has an active stack of bottom electrode (BE), piezoelectric material (PM) and top electrode (TE) and at least one element of this active stack has a curved side wall (CSW). Two or more curved side walls may be arranged on spheres, on cylinders or prisms with an elliptical footprint with different radii.
1 . A BAW resonator with reduced lateral modes, comprising an active stack including
a bottom electrode in a bottom electrode layer,
a top electrode in a top electrode layer,
a piezoelectric material in a piezoelectric layer between the bottom electrode layer and the top electrode layer,
wherein
at least one element selected from the active stack has a curved side wall.
2 . The BAW resonator of claim 1 , wherein two or all side walls of the active stack have a curved side wall.
3 . The BAW resonator of claim 1 , wherein the number of side walls of one or more element of the active stack is an odd number.
4 . The BAW resonator of claim 1 , wherein the one or more curved side walls are arranged on a sphere, on a cylinder or on a prism.
5 . The BAW resonator of claim 1 , wherein two or more curved side walls are arranged on spheres, on cylinders or prisms with an elliptical footprint with different radii.
6 . The BAW resonator of claim 1 , wherein two or more curved side walls of the same element of the active stack have different radii.
7 . The BAW resonator of claim 1 , wherein two or more curved side walls of different elements of the active stack have different radii.
8 . The BAW resonator of claim 1 , wherein the BAW resonator is part of an RF filter comprising one or more BAW resonators.
9 . The BAW resonator of claim 8 , wherein the RF filter is part of a multiplexer comprising one or more RF filters.