IP Library › Granted Patent US 12,426,426
Granted Patent B2
US 12,426,426 · App. 17/597,698 · Granted Sep 23, 2025

Arrays of LED structures extending through holes in a dielectric layer and independently activated

Inventor: Tao Wang (Sheffield, GB)
Assignee: Snap Inc.
H10H29/142
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Quick Facts
Patent No.
US 12,426,426
App. No.
17/597,698
Granted
Sep 23, 2025
Kind
B2
Abstract

A method of producing a light emitting diode (LED) array comprises: forming a semiconductor layer of group III nitride material; forming a dielectric mask layer over the semiconductor layer, the dielectric mask layer having an array of holes through it each exposing an area of the semiconductor layer; and growing an LED structure in each of the holes. The array of holes comprises a first set of holes each having a first cross sectional area and a second set of holes each having a second cross sectional area different from the first cross sectional area.

Claims (36)

1. An LED array comprising a semiconductor layer, a dielectric layer extending over the semiconductor layer, an array of LED structures extending through holes in the dielectric layer, and a plurality of contacts,

wherein:

the LED structures comprise a first set of LED structures each of the LED structures having a first cross sectional area and a second set of LED structures each of the LED structures having a second cross sectional area different from the first cross sectional area;

the LED structure extending through a respective hole comprises an active region having a cross sectional area bounded by the cross sectional area of the respective hole;

the LED structures are arranged in a plurality of groups, each of the groups of LED structures including at least one of the LED structures from each of the sets of LED structures; and

each of the contacts is connected to a respective one of the groups of LED structures, whereby each of the groups of LED structures can be activated independently of other of the groups of LED structures.

2. The LED array according to claim 1 wherein the second cross sectional area is at least 1% greater than the first cross sectional area.

3. The LED array according to claim 1 wherein the dielectric layer has a plurality of holes through it, each of the LED structures is formed in a respective one of the holes, and the holes comprise a first set of holes each of the holes having a first cross sectional area and a second set of holes each of the holes having a second cross sectional area, and the hole second cross sectional area is different from the hole first cross sectional area.

4. The LED array according to claim 1 wherein each of the groups of LED structures includes only the LED structures from one of the sets of LED structures.

5. The LED array according to claim 1 wherein each of the sets of LED structures is arranged in a regular array.

6. The LED array according to claim 1 wherein the first set of LED structures has each of the LED structures arranged to emit light having a first peak wavelength and the second set of LED structures has each of the LED structures arranged to emit light having a second peak wavelength, and the second peak wavelength is different from the first peak wavelength.

7. The LED array according to claim 6 wherein the LED structures further comprise a third set of LED structures each of the LED structures having a third cross sectional area, and the third cross sectional area is different from the first and second cross sectional areas.

8. The LED array according to claim 6 wherein the LED structures further comprise a third set of LED structures each of the LED structures having a third cross sectional area, and the third cross sectional area is different from the first and second cross sectional areas, and the third set of LED structures has each of the LED structures arranged to emit light having a third peak wavelength, and the third peak wavelength is different from the first peak wavelength and the second peak wavelength.

9. A method of producing the LED array of claim 1 , the method comprising:

forming the semiconductor layer of group III nitride material;

forming the dielectric layer;

forming the holes through the dielectric layer;

growing the array of LED structures in the holes; and

forming the plurality of contacts.

10. The method according to claim 9 wherein the first cross sectional area is at least 1% greater than the second cross sectional area.

11. The method according to claim 9 wherein each of the LED structures fills the hole in which it is grown whereby the LED structures comprise a first set of LED structures each of the LED structures having a first cross sectional area and a second set of LED structures each of the LED structures having a second cross sectional area, and the LED structure second cross sectional area is different from the LED structure first cross sectional area.

12. The method according to claim 9 wherein each of the sets of holes is arranged in a regular array.

13. The method according to claim 9 wherein each of the LED structures fills the hole in which it is grown whereby the LED structures comprise a first set of LED structures each of the LED structures having a first cross sectional area and a second set of LED structures each of the LED structures having a second cross sectional area, and the LED structure second cross sectional area is different from the LED structure first cross sectional area.

14. The method according to claim 13 wherein the LED structures of the first set of LED structures are each arranged to emit light having a first peak wavelength and the LED structures of the second set of LED structures are each arranged to emit light having a second peak wavelength, and the second peak wavelength is different from the first peak wavelength.

15. The method according to claim 14 wherein the array of holes further comprises a third set of holes each of the holes of the third set of holes having a third cross sectional area different from the first and second cross sectional areas of the holes of the first and second sets of holes.

16. The method according to claim 15 wherein the array of LED structures includes a third set of LED structures grown in the third set of holes, and the LED structures of the third set of LED structures are each arranged to emit light having a third peak wavelength, and the third peak wavelength is different from the first peak wavelength and the second peak wavelength.

17. A display comprising:

an LED array comprising a semiconductor layer, a dielectric layer extending over the semiconductor layer, an array of LED structures extending through holes in the dielectric layer, and a plurality of contacts,

wherein:

the LED structures comprise a first set of LED structures each of the LED structures having a first cross sectional area and a second set of LED structures each of the LED structures having a second cross sectional area different from the first cross sectional area;

the LED structure extending through a respective hole comprises an active region having a cross sectional area bounded by the cross sectional area of the respective hole;

the LED structures are arranged in a plurality of groups, each of the groups of LED structures including at least one of the LED structures from each of the sets of LED structures; and

each of the contacts is connected to a respective one of the groups of LED structures, whereby each of the groups of LED structures can be activated independently of other of the groups of LED structures.

18. The display according to claim 17 wherein the second cross sectional area is at least 1% greater than the first cross sectional area.

19. The display according to claim 17 wherein the dielectric layer has a plurality of holes through it, each of the LED structures is formed in a respective one of the holes, and the holes comprise a first set of holes each of the holes having a first cross sectional area and a second set of holes each of the holes having a second cross sectional area, and the hole second cross sectional area is different from the hole first cross sectional area.

20. The display according to claim 17 wherein the first set of LED structures has each of the LED structures arranged to emit light having a first peak wavelength and the second set of LED structures has each of the LED structures arranged to emit light having a second peak wavelength, and the second peak wavelength is different from the first peak wavelength.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ERRONEOULSY FILED APPLICATION NUMBERS 07823814, 17893696, 17887215, 77895449, 17821431 AND 63397172 PREVIOUSLY RECORDED AT REEL: 061092 FRAME: 0669. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 26, 2023
From: BAE SYSTEMS PLC
To: SNAP INC.
Reel/Frame 063789/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2023
From: THE UNIVERSITY OF SHEFFIELD
To: SNAP INC.
Reel/Frame 062343/0071 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO REMOVE THE ASSIGNMENT ERRONEOUSLY FILED FOR APPLICATION #S 09727095, 09727132, 09737418, 09792133, 09311804, AND 09369685 PREVIOUSLY RECORDED AT REEL: 061092 FRAME: 0669. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 7, 2022
From: BAE SYSTEMS PLC
To: SNAP INC.
Reel/Frame 062219/0544 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE THE ASSIGNMENT ERRONEOUSLY FILED FOR APPLICATION #S 09999093, 10217152, 17815831, 60062731, AND 17823810 PREVIOUSLY RECORDED AT REEL: 061092 FRAME: 0669. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 7, 2022
From: BAE SYSTEMS PLC
To: SNAP INC.
Reel/Frame 062219/0586 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ASSIGNMENT ERRONEOUSLY FILED FOR 17788985, 17939256, 17597699, 17939296, 17597698 AND 17250997. PREVIOUSLY RECORDED AT REEL: 061092 FRAME: 0669. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 7, 2022
From: BAE SYSTEMS PLC
To: SNAP INC.
Reel/Frame 062112/0237 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2022
From: BAE SYSTEMS PLC
To: SNAP INC.
Reel/Frame 061092/0669 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2022
From: WANG, TAO
To: THE UNIVERSITY OF SHEFFIELD
Reel/Frame 059043/0727 →
Priority Claims (1)
GB 1910348 · Jul 19, 2019 · national
Continuity (1)
Related Publication 20220262848A1 · Aug 18, 2022
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