IP Library Granted Patent US 12,007,693
Granted Patent B2
US 12,007,693 · App. 17/600,763 · Granted Jun 11, 2024

Laser focussing module

Inventors: Ruud Antonius Catharina Maria Beerens (Roggel, NL); Nico Johannes Antonius Hubertus Boonen (Geldrop, NL); Stefan Michael Bruno Bäumer (Eindhoven, NL); Tolga Mehmet Ergin (Bietigheim-Bissingen, DE); Andreas Kristian Hopf (Stuttgart, DE); Derk Jan Wilfred Klunder (Geldrop, NL); Martin Anton Lambert (Korb, DE); Stefan Piehler (Stuttgart, DE); Manisha Ranjan (Eindhoven, NL); Frank Bernhard Sperling (Nuenen, NL); Andrey Sergeevich Tychkov (Eindhoven, NL); Jasper Witte (Eindhoven, NL); Jiayue Yuan (Eindhoven, NL)
Assignees: ASML Netherlands B. V.; Trumpf Lasersystems For Semiconductor Manufacturing GmbH
G03F7/70033H01S3/0071H05G2/008
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Quick Facts
Patent No.
US 12,007,693
App. No.
17/600,763
Granted
Jun 11, 2024
Kind
B2
Abstract

A laser focusing system ( 330 ) for use in an EUV radiation source is described, the laser focusing system comprising: •—a first curved mirror ( 330.1 ) configured to receive a laser beam from a beam delivery system ( 320 ) and generate a first reflected laser beam ( 316 ); •—a second curved mirror ( 330.2 ) configured to receive the first reflected laser beam ( 316 ) and generate a second reflected laser beam ( 317 ), wherein the laser focusing system ( 330 ) is configured to focus the second reflected laser beam ( 317 ) to a target location ( 340 ) in a vessel ( 350 ) of the EUV radiation source ( 360 ).

Claims (49)

1. A laser focusing system comprising:

a first curved mirror configured to receive a laser beam from a beam delivery system and generate a first reflected laser beam; and

a second curved mirror configured to receive the first reflected laser beam and generate a second reflected laser beam,

wherein the second reflected laser beam is focused onto a target location in a vessel of an EUV radiation source, wherein the vessel comprises a collector mirror,

wherein an angle between an optical axis of the second reflected laser beam and a horizontal axis is smaller than 25 degrees,

wherein the horizontal axis is defined by the optical axis of the collector mirror,

wherein the laser beam is received by one or more additional mirrors that redirect the laser beam towards the first curved mirror; and

wherein the one or more additional mirrors are configured to overcome a difference in location between the received laser beam and the redirected laser beam, and to translate the laser beam in a substantially vertical direction.

2. The laser focusing system of claim 1 , wherein:

the first curved mirror is configured to receive the laser beam at an incidence angle that is smaller than 30 degrees; and

the second curved mirror is configured to receive the laser beam at an incidence angle that is smaller than 30 degrees.

3. The laser focusing system of claim 1 ,

wherein the one or more additional mirrors comprises a periscope system.

4. The laser focusing system of claim 3 , wherein:

the periscope system comprises a first periscope mirror configured to receive the laser beam and reflect the laser beam towards a second periscope mirror, and

the second periscope mirror is configured to reflect the laser beam towards the first curved mirror.

5. The laser focusing system of claim 3 , wherein the periscope system and the first and second curved mirror are configured so that the laser beam that is redirected towards the first curved mirror, the first reflected laser beam, and the second reflected laser beam are configured in substantially a same plane.

6. The laser focusing system of claim 3 , wherein the periscope system and the first and second curved mirror are configured so that the laser beam that is redirected towards the first curved mirror, the first reflected laser beam, and the second reflected laser beam are configured in substantially a different plane.

7. The laser focusing system of claim 1 , wherein the one or more curved additional mirrors form a telescope system configured to change a diameter of the laser beam and/or to change a divergence of the laser beam.

8. The laser focusing system of claim 1 , wherein:

the laser beam and the redirected laser beam define a first plane, and the first reflected laser beam and the second reflected laser beam define a second plane, the second plane being different from the first plane.

9. The laser focusing system of claim 8 , wherein the first plane is substantially perpendicular to the second plane.

10. The laser focusing system of claim 8 , wherein the second plane is non-perpendicular to the first plane.

11. The laser focusing system of claim 8 , wherein the second plane is parallel to the first plane.

12. The laser focusing system of claim 8 , wherein the laser beam that is redirected towards the first curved mirror is configured in both the first plane and the second plane.

13. The laser focusing system of claim 8 , wherein the laser beam that is redirected towards the first curved mirror is not configured in the second plane.

14. The laser focusing system of claim 1 , wherein the angle between the optical axis of the second reflected laser beam and the horizontal axis is smaller than 20 degrees.

15. A laser source comprising:

a laser focusing system configured to be used in the EUV radiation source, the laser focusing system comprising:

a first curved mirror configured to receive a laser beam from a beam delivery system and generate a first reflected laser beam; and

a second curved mirror configured to receive the first reflected laser beam and generate a second reflected laser beam,

wherein the second reflected laser beam is focused onto a target location in a vessel of the EUV radiation source,

wherein the vessel comprises a collector mirror,

wherein an angle between an optical axis of the second reflected laser beam and a horizontal axis is smaller than 25 degrees,

wherein the horizontal axis is defined by the optical axis of the collector mirror,

wherein the laser beam is received by one or more additional mirrors that redirect the laser beam towards the first curved mirror; and

wherein the one or more additional mirrors are configured to overcome a difference in location between the received laser beam and the redirected laser beam, and to translate the laser beam in a substantially vertical direction.

16. The laser source of claim 15 , wherein the angle between the optical axis of the second reflected laser beam and the horizontal axis is smaller than 20 degrees.

17. An EUV radiation source comprising:

a laser source comprising:

a laser focusing system configured to be used in the EUV radiation source, the laser focusing system comprising:

a first curved mirror configured to receive a laser beam from a beam delivery system and generate a first reflected laser beam; and

a second curved mirror configured to receive the first reflected laser beam and generate a second reflected laser beam,

wherein the second reflected laser beam is focused onto a target location in a vessel of the EUV radiation source,

wherein the vessel comprises a collector mirror,

wherein an angle between an optical axis of the second reflected laser beam and a horizontal axis is smaller than 25 degrees,

wherein the horizontal axis is defined by the optical axis of the collector mirror,

wherein the laser beam is received by one or more additional mirrors that redirect the laser beam towards the first curved mirror; and wherein the one or more additional mirrors are configured to overcome a difference in location between the received laser beam and the redirected laser beam, and to translate the laser beam in a substantially vertical direction.

18. The EUV radiation source of claim 17 , wherein the angle between the optical axis of the second reflected laser beam and the horizontal axis is smaller than 20 degrees.

Assignments (4)
CHANGE OF NAME Recorded Jan 27, 2025
From: TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING AG
To: TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE
Reel/Frame 070014/0571 →
CHANGE OF NAME Recorded Jan 27, 2025
From: TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING GMBH
To: TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING AG
Reel/Frame 070015/0125 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2022
From: BEERENS, RUUD ANTONIUS CATHARINA MARIA; YUAN, JIAYUE; BOONEN, NICO JOHANNES ANTONIUS HUBERTUS; BÄUMER, STEFAN MICHAEL BRUNO; KLUNDER, DERK JAN WILFRED; RANJAN, MANISHA; SPERLING, FRANK BERNHARD; TYCHKOV, ANDREY SERGEEVICH; WITTE, JASPER
To: ASML NETHERLANDS B.V.
Reel/Frame 061975/0364 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2022
From: LAMBERT, MARTIN ANTON; HOPF, ANDREAS KRISTIAN; PIEHLER, STEFAN; ERGIN, TOLGA MEHMET
To: TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING GMBH
Reel/Frame 061976/0198 →