Bulk acoustic wave device with reduced non-linearities
A BAW device comprises a first BAW resonator ( 1 ) and a second BAW resonator ( 2 ). The first BAW resonator and the second BAW resonator each comprise a first electrode ( 11, 21 ), a second electrode ( 12, 22 ) and a piezoelectric layer ( 13, 23 ) being arranged in each case between the first electrode and the second electrode of the associated BAW resonator. The first electrodes, the second electrodes and the piezoelectric layers of both BAW resonators are designed essentially identically. A first conductor track ( 24 ) extends from the first electrode of the second BAW resonator to a third electric element ( 3 ) of the BAW device and electrically connects said first electrode with said third electric element. A first dummy conductor track ( 14 ) extends from the first electrode of the first BAW resonator, is electrically connected to said first electrode and, apart from said first electrode, is not electrically connected to any further electric element. The first dummy conductor track is designed such that it influences the acoustic and capacitive properties of the first BAW resonator essentially in the same way as the first conductor track influences the acoustic and capacitive properties of the second BAW resonator.
1. A BAW device, comprising:
a first BAW resonator; and
a second BAW resonator, wherein:
the first BAW resonator and the second BAW resonator each comprise a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer of the associated BAW resonator being arranged in each case between the first electrode and the second electrode of the associated BAW resonator,
a first conductor track extends from the first electrode of the second BAW resonator to a third electric element of the BAW device and electrically connects said first electrode of the second BAW resonator with said third electric element,
a first dummy conductor track extends from the first electrode of the first BAW resonator and is electrically connected to said first electrode of the first BAW resonator,
in a top view, the first dummy conductor track overlaps with the second electrode of the first BAW resonator in a first overlap region, and
in the top view, the first conductor track overlaps with the second electrode of the second BAW resonator in a second overlap region.
2. The BAW device according to claim 1 , wherein:
in the top view, the first electrode of the first BAW resonator together with a second conductor track extending from the first electrode of the first BAW resonator and the first dummy conductor track overlap with the second electrode of the first BAW resonator in a third overlap region,
in the top view, the first electrode of the second BAW resonator together with the first conductor track and a third conductor track extending from the first electrode of the second BAW resonator overlap with the second electrode of the second BAW resonator in a fourth overlap region.
3. The BAW device according to claim 1 , wherein the first dummy conductor track extends starting from and in a direction away from the first electrode of the first BAW resonator over a length of at least 0.5 μm.
4. The BAW device according to claim 2 , wherein;
the second conductor track extends from the first electrode of the first BAW resonator to a fourth electric element of the BAW device and electrically connects said first electrode of the first BAW resonator with said fourth electric element, and
the third conductor track extends from the first electrode of the second BAW resonator to a fifth electric element of the BAW device and electrically connects said first electrode of the second BAW resonator with said fifth electric element.
5. The BAW device according to claim 1 , wherein;
the third electric element is a third BAW resonator comprising a first electrode, a second electrode and a piezoelectric layer being arranged between the first electrode and the second electrode of said third BAW resonator, and
the first conductor track electrically connects the first electrode of the second BAW resonator with the first electrode of the third BAW resonator.
6. The BAW device according to claim 5 , wherein the third BAW resonator is a shunt resonator.
7. The BAW device according to claim 1 , wherein the third electric element is an electric terminal or an inductance or a capacitor.
8. The BAW device according to claim 1 , wherein the first BAW resonator and the second BAW resonator are cascaded in anti-series.
9. The BAW device according to claim 1 , wherein the first BAW resonator and the second BAW resonator are cascaded in anti-parallel.
10. BAW device according to claim 1 , wherein the first and the second BAW resonators are both solidly mounted BAW resonators or are both film BAW resonators.
11. The BAW device according to claim 1 , wherein the first electrodes and the second electrodes of the first and the second BAW resonator each have a rectangular shape.
12. The BAW device according to claim 11 , wherein:
a transverse edge of the first electrode of the first BAW resonator faces a transverse edge of the first electrode of the second BAW resonator, and
the first dummy conductor track and the first conductor track each extend from longitudinal edges of the associated first electrodes, said longitudinal edges running perpendicularly to said transverse edges.
13. The BAW device according to claim 1 , wherein the first and the second BAW resonator each have a resonant frequency of at least 1 GHz.
14. The BAW device according to claim 1 , wherein the piezoelectric layers of the first and second BAW resonator are integrally formed with each other.