Terahertz and sub-terahertz devices
One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.
1 . A semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz), the semiconducting device comprising:
a heterodimensional plasmonic structure; and
a periodically modulated active layer selected from the group consisting of a two-dimensional electron gas, a three-dimensional electron gas, a two-dimensional hole gas and a three-dimensional hole gas,
the heterodimensional plasmonic structure comprising at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency and fabricated with a material selected from the group comprising silicon (Si), gallium-nitride (GaN), indium gallium arsenide (InGaAs), and graphene.
2 . The semiconducting device of claim 1 , wherein the nanostructure is selected from the group comprising a nanodot, a nanoparticle, a nanocolumn, a nanocone, a nanowire, a nanotube, or a combination thereof.
3 . The semiconducting device of claim 1 , wherein the active layer is fabricated with a material selected from the group comprising silicon (Si), gallium-nitride (GaN), indium gallium arsenide (InGaAs), and graphene.
4 . The semiconducting device according to claim 1 , further comprising a gate coupled to the active layer, the gate configured receive a bias voltage, the bias voltage configured to tune the resonant plasmon frequency.
5 . The semiconducting device of claim 4 , further comprising a drain contact and a source contact contacting the active layer, a configuration of the drain contact and the source contact selected from the group comprising continuous side contacts, split side contacts, side contacts in an opposing configuration and side contacts in a cross configuration.
6 . The semiconducting device of claim 4 , wherein at least one of the heterodimensional plasmonic structure and the gate comprise an asymmetric feature configured to provide an asymmetry between the source and the drain.
7 . The semiconducting device according to claim 1 , wherein the heterodimensional plasmonic structure comprises a plurality of nanostructures, the plurality of nanostructures periodically modulated.
8 . A semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz), the semiconducting device comprising:
a heterodimensional plasmonic structure; and
an active layer selected from the group consisting of a two-dimensional electron gas, a three-dimensional electron gas, a two-dimensional hole gas and a three-dimensional hole gas,
wherein the heterodimensional plasmonic structure comprises at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency and fabricated with a material selected from the group comprising silicon (Si), gallium-nitride (GaN), indium gallium arsenide (InGaAs), and graphene, and
wherein the heterodimensional plasmonic structure comprises a plurality of nanostructures, a first portion of the plurality of nanostructures fabricated with a first set of parameters and a second portion of the plurality of nanostructures fabricated with a second set of parameters, a selected first parameter of the first set differing from a selected second parameter of the second set by at least one percent (%).
9 . A field effect device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz), the field effect device comprising:
a heterodimensional plasmonic structure;
a periodically modulated active layer selected from the group consisting of a two-dimensional electron gas, a three-dimensional electron gas, a two-dimensional hole gas and a three-dimensional hole gas; and
a gate, a drain, and a source coupled to the active layer,
the heterodimensional plasmonic structure comprising at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency and fabricated with a material selected from the group comprising silicon (Si), gallium-nitride (GaN), indium gallium arsenide (InGaAs), and graphene.
10 . The field effect device of claim 9 , wherein the nanostructure is selected from the group comprising a nanodot, a nanoparticle, a nanocolumn, a nanocone, a nanowire, a nanotube, or a combination thereof.
11 . The field effect device of claim 9 , wherein the active layer is fabricated with a material selected from the group comprising silicon (Si), gallium-nitride (GaN), indium gallium arsenide (InGaAs), and graphene.
12 . The field effect device of claim 9 , wherein the gate is configured receive a bias voltage, the bias voltage configured to tune the resonant plasmon frequency.
13 . The field effect device according to claim 9 , further comprising a drain contact contacting the drain and a source contact contacting the source, a configuration of the drain contact and the source contact selected from the group comprising continuous side contacts, split side contacts, side contacts in an opposing configuration and side contacts in a cross configuration.
14 . The field effect device according to claim 9 , wherein each nanostructure is capacitively coupled to the gate.
15 . The field effect device according to claim 9 , wherein at least one of the heterodimensional plasmonic structure and the gate comprise an asymmetric feature configured to provide an asymmetry between the source and the drain.
16 . The field effect device according to claim 9 , wherein the heterodimensional plasmonic structure comprises a plurality of nanostructures, a first portion of the plurality of nanostructures fabricated with a first set of parameters and a second portion of the plurality of nanostructures fabricated with a second set of parameters, a selected first parameter of the first set differing from a selected second parameter of the second set by at least one percent (%).