High Adhesion Resistive Composition

1 . A resistive composition comprising, prior to firing:

an organic portion, and

a solid portion comprising:

from about 30 to about 70 vol % platinum (Pt) particles, and

from about 30 to about 70 vol % alumina (Al 2 O 3 ) particles,

wherein D50 of platinum particles is from about 0.3 micron to about 3.0 micron, and D50 of alumina particles is from about 0.05 micron to about 0.6 micron.

2 . The resistive composition of claim 1 , wherein

D10 of platinum particles is from about 0.1 micron to about 2.0 micron,

D90 of platinum particles is from about 5.0 micron to about 7.5 micron,

D10 of alumina particles is from about 0.01 micron to about 0.09 micron, and

D90 of alumina particles is from about 0.2 micron to about 0.8 micron.

3 . The resistive composition of claim 1 , wherein

D50 of platinum particles is from about 0.7 micron to about 2.0 micron, and

D50 of alumina particles is from about 0.05 micron to about 0.25 micron.

4 . The resistive composition of claim 3 , wherein

D10 of platinum particles is from about 0.1 micron to about 1.0 micron,

D90 of platinum particles is from about 4.0 micron to about 5.5 micron,

D10 of alumina particles is from about 0.01 micron to about 0.05 micron, and

D90 of alumina particles is from about 0.2 micron to about 0.5 micron.

5 . The resistive composition of claim 1 ,

wherein the resistive composition is devoid of at least one of glass compositions, metallic elements, alkali metals, and reducible oxides,

wherein the metallic elements include at least one of Fe, Ni, Mn, Co, Cu, and Cr,

wherein the alkali metals includes at least one of Na, K, and Li, and

wherein the reducible oxides includes at least one of ZnO, FeO, CoO, Cr 2 O 3 , PbO, CdO, and Bi 2 O 3 .

6 . The resistive composition of claim 1 , wherein the resistive composition is devoid of the glass compositions, the metallic elements, the alkali metals, and the reducible oxides.

7 . The resistive composition of claim 1 , further comprising at least one of Rh, Ir, Pd, Au, and Ag, wherein the amount of at least one of Rh, Ir, Pd, Au, and Ag ranges from about 0.01 and about 10 vol %.

8 . The resistive composition of claim 1 , wherein the solid portion comprises:

from about 30 to about 70 vol % platinum (Pt) particles, and

from about 30 to about 70 vol % mixture including alumina (Al 2 O 3 ) and cordierite, the mixture comprising:

from about 10 to about 90 vol % alumina (Al 2 O 3 ) particles of the mixture, and

from about 10 to about 90 vol % cordierite particles of the mixture.

9 . A resistor film formed on a substrate by firing the resistive composition of claim 1 ,

wherein the temperature coefficient of resistance (TCR) of the resistor film is from about 3685 to about 3925 ppm/° C.,

wherein the substrate is selected from alumina, zirconia toughened alumina, aluminum nitride, and silicon nitride, and

wherein no interface layer is formed between the film and substrate.

10 . The resistor film of claim 9 , wherein resistivity of the film ranges from about 0.05 to about 2 ohm per square.

11 . The resistor film of claim 9 , wherein the film thickness after the firing ranges from about 1 micron to about 25 micron.

12 . A method of forming a device comprising the steps of:

applying the resistive composition of claim 1 to a substrate,

applying a conductive composition for forming at least one of a lead line and a pad for welding, and

firing the resistive composition and the conductive composition applied on the substrate at a temperature from about 1250° C. to about 1500° C.

13 . The method of claim 12 , wherein the substrate with the resistive composition and conductive compositions applied is fired at a temperature about 1350° C.

14 . The method of claim 12 , wherein the substrate with the resistive composition and conductive compositions applied is co-fired.

15 . The method of claim 12 , wherein the substrate is selected from alumina, zirconia toughened alumina, aluminum nitride, and silicon nitride.