Apparatus and method for a multi-layer pixel structure

1. A pixel structure comprising a plurality of layers for providing a touch sensitive pixel of a sensing array, the layers comprising:

a thin film transistor;

a gate layer of the pixel structure comprising a gate region of the thin film transistor; and

a conductive layer deposited on a dielectric shield to be touched by an object to be sensed and arranged to provide a capacitive sensing electrode coupled to the thin film transistor,

wherein the dielectric shield provides a substrate on which the layers of the pixel structure are disposed,

wherein the thin film transistor comprises a plurality of layers deposited on the capacitive sensing electrode,

wherein the gate layer is connected to the capacitive sensing electrode.

2. The pixel structure of claim 1 wherein the dielectric shield comprises a first surface to be touched by the object to be sensed; and

wherein the capacitive sensing electrode is disposed on a second surface of the dielectric shield.

3. The pixel structure of claim 1 wherein an insulating layer separates the capacitive sensing electrode from the thin film transistor.

4. The pixel structure of claim 3 wherein the capacitive sensing electrode is connected to the thin film transistor by a conductive via through the insulating layer.

5. The pixel structure of claim 1 wherein a source-drain layer of the pixel structure comprises a source region and a drain region of the thin film transistor.

6. The pixel structure of claim 5 comprising a channel region comprising a semiconductor, which connects the source region and the drain region of the thin film transistor in an “on” state.

7. The pixel structure of claim 1 comprising a reference capacitor.

8. The pixel structure of claim 7 comprising an input for coupling a bias voltage to a first plate of the reference capacitor for pre charging the pixel.

9. A method of manufacturing a pixel structure comprising a plurality of layers for providing a touch sensitive pixel of a touch sensitive array, the method comprising:

depositing a conductive layer on a first surface of a dielectric shield and arranged to provide a capacitive sensing electrode, wherein the dielectric shield comprises a second surface, opposite to the first surface, and arranged to be touched by an object to be sensed by the pixel; and

fabricating a thin film transistor wherein the thin film transistor is connected to the capacitive sensing electrode,

depositing a gate layer of the pixel structure, the gate layer comprising a gate region of the thin film transistor, and connecting the gate layer to the capacitive sensing electrode,

wherein the thin film transistor is fabricated over the capacitive sensing electrode.

10. The method of claim 9 comprising:

depositing a passivation layer between the capacitive sensing electrode and the thin film transistor.

11. The method of claim 10 wherein a connection between the capacitive sensing electrode and the thin film transistor comprises a conductive via through the passivation layer.

12. The method of claim 9 wherein fabricating the thin film transistor comprises:

depositing a source-drain layer;

wherein the source-drain layer comprises a source region and a drain region of the thin film transistor.

13. The method of claim 12 wherein fabricating the thin film transistor further comprises depositing a channel region adjacent the source-drain layer and a gate-insulator layer between the channel region and the gate layer.

14. The method of claim 9 further comprising fabricating a reference capacitor arranged to be connected to the thin film transistor and the capacitive sensing electrode.

15. A pixel structure comprising a plurality of layers for providing a touch sensitive pixel of a sensing array, the layers comprising:

a thin film transistor; and

a conductive layer deposited on a dielectric shield to be touched by an object to be sensed and arranged to provide a capacitive sensing electrode coupled to the thin film transistor,

wherein a source-drain layer of the pixel structure comprises a source region and a drain region of the thin film transistor,

further comprising a gate layer of the pixel structure comprising a gate region of the thin film transistor,

wherein the gate layer is connected to the capacitive sensing electrode.