Electric component with pad for a bump and manufacturing method thereof

1. A bump pad enclosure, comprising:

an electrode pad having an electrode pad center surface and a first perimeter area on a surface of the electrode pad, wherein the first perimeter area surrounds the electrode pad center surface;

an under bump metallization on or above the electrode pad center surface;

a first shield configured to shield the first perimeter area from a detrimental influence of an environment, wherein the first shield covers at least the first perimeter area of the electrode pad; and

a covering element formed on the first shield, wherein the first shield is positioned between the first perimeter area and the covering element, and wherein the first shield is positioned between the electrode pad and the covering element.

2. The bump pad enclosure of claim 1 , wherein the first shield is a moisture shield.

3. The bump pad enclosure of claim 1 , wherein the first shield has a thickness t with t≤500 nm or t≤400 nm or t≤300 nm.

4. The bump pad enclosure of claim 1 , wherein the first shield comprises a material selected from SiNx, SixNy (with 2.5≤x≤3.5; 3.5≤y≤4.5), Si3N4, Al2O3, SiO2, ZrO2, TiO2 and SiO2, Al2O3 and SiO2, Al2O3 and ZrO2, Al2O3 and TiO2.

5. The bump pad enclosure of claim 1 , wherein the first shield comprises a single-layer construction or a multi-layer construction.

6. The bump pad enclosure of claim 1 , wherein the covering element comprises a material selected from SiNx, SixNy (with 2.5≤x≤3.5; 3.5≤y≤4.5), Si3N4, Al2O3, SiO2, ZrO2, TiO2, SixNy (with 2.5≤x≤3.5; 3.5≤y≤4.5) and SiO2, Si3N4 and SiO2, Al2O3 and SiO2, Al2O3 and ZrO 2 , Al2O3 and TiO2.

7. The bump pad enclosure of claim 1 , wherein the covering element comprises at least one of SiO2 or a silicon nitride.

8. The bump pad enclosure of claim 1 , further comprising a second shield, wherein:

the second shield covers at least a second perimeter area of the electrode pad, and

the second shield is provided and configured to shield the second perimeter area from a detrimental influence of the environment.

9. The bump pad enclosure of claim 8 , wherein the second shield is a moisture shield.

10. The bump pad enclosure of claim 8 , wherein the second shield has a thickness t 2 with t 2 ≤500 nm or t 2 ≤400 nm or t 2 ≤300 nm.

11. The bump pad enclosure of claim 8 , wherein the second shield comprises a material selected from SiNx, SixNy (with 2.5≤x≤3.5; 3.5≤y≤4.5), Si3N4, Al2O3, SiO2, ZrO2, TiO2, SixNy (with 2.5≤x≤3.5; 3.5≤y≤4.5) and SiO2, Si3N4 and SiO2, Al2O3 and SiO2, Al2O3 and ZrO2, Al2O3 and TiO2.

12. The bump pad enclosure of claim 8 , wherein the second shield comprises a single-layer construction or a multi-layer construction.

13. The bump pad enclosure of claim 8 , wherein the second shield is provided and configured to shield at least partially a vertical flank of the first shield from a detrimental influence of the environment.

14. The bump pad enclosure of claim 1 , wherein the bump pad enclosure is part of a bump connector, the bump connector including solder material provided and configured to establish a bump connection.

15. The bump pad enclosure of claim 14 , wherein the bump connector is part of an electric component.

16. The bump pad enclosure of claim 15 , wherein the electric component is part of an electric device.

17. A method of manufacturing an electric component comprising a bump pad enclosure including an electrode pad, an under bump metallization, a covering element, and a first shield, wherein the first shield covers at least a first perimeter area of the electrode pad and the first shield is provided and configured to shield the first perimeter area from a detrimental influence of an environment, the method comprising:

providing the electrode pad with an electrode pad center surface and the first perimeter area on a surface of the electrode pad, wherein the first perimeter area surrounds the electrode pad center surface;

depositing material of the first shield on or over at least in the first perimeter area;

depositing material of the under bump metallization on or over at least the electrode pad center surface; and

forming material of the covering element on or over the material of the first shield, wherein the covering element is formed with the first shield positioned between the first perimeter area and the covering element.