Method and device for addressing qubits, and method for producing the device
A method of addressing at least one qubit to be addressed in a set of two or more qubits includes exposing the qubit to be addressed to an electromagnetic field; and at a same time exposing another qubit of the set of two or more qubits to an electromagnetic counter field in such a way that the electromagnetic field has no effect on the other qubit or that the electromagnetic field has a different effect on the other qubit than on the qubit to be addressed. A device for performing the method includes the set of two or more qubits and electromagnetic sources for generating the electromagnetic field and electromagnetic counter field.
1. A device comprising:
a set of two or more qubits; and electromagnetic sources; wherein: the electromagnetic sources are electrically conductive structures; and the device is configured to carry out a method of addressing at least one qubit to be addressed in the set of two or more qubits, comprising:
exposing the qubit to be addressed to an electromagnetic field; and at a same time exposing another qubit of the set of two or more qubits to an electromagnetic counter field in such a way that the electromagnetic field has no effect on the other qubit or that the electromagnetic field has a different effect on the other qubit than on the qubit to be addressed;
wherein the electrically conductive structures are lines, wires, or metallizations;
wherein the electrically conductive structures generate the electromagnetic field and the electromagnetic counter field;
wherein each qubit is assigned to at least one electromagnetic source;
wherein the electromagnetic sources are arranged in a layer; and
wherein the qubits have a distance perpendicular to the layer from the respectively associated electromagnetic source of at most 30 nm, and/or the qubits projected onto this layer have a distance from the respectively associated electromagnetic source of at most 20 nm.
2. The device according to claim 1 , wherein: the qubits have a distance perpendicular to the layer from the respectively associated electromagnetic source in a range of 0 nm to 10 nm; and/or the qubits projected onto this layer have a distance from the respectively associated electromagnetic source in a range of 0 nm to 5 nm.
3. The device according to claim 1 , wherein at least a first electrically conductive structure of the electrically conductive structures is connected to an electromagnetic excitation element and a photoelectron detection element.
4. The device according to claim 3 , wherein: at least a second electrically conductive structure of the electrically conductive structures forms a ground for reading out the qubits; and the second electrically conductive structure is arranged adjacent to the first electrically conductive structure at a distance in a plane of at most 40 nm.
5. The device according to claim 4 , wherein the first electrically conductive structure and/or the second electrically conductive structure has a cross-section with a longitudinal dimension of less than 50 nm.
6. The device according to claim 1 , wherein:
the qubits are arranged one-, two-or three-dimensions and/or the electrically conductive structures are arranged in one, two or three dimensions;
there are two or more layers in which electrically conductive structures are arranged;
the electrically conductive structures are parallel to one another; and
the electrically conductive structures of different layers are arranged differently to each other; whereby an electrical insulator is arranged between two layers.