Electro-absorption modulator
Provided is an electro-absorption modulator that includes a substrate, a mesa structure, a first conductivity type electrode, and a second conductivity type electrode. The first conductivity type electrode includes a mesa-top electrode, a pad electrode, and a lead-out wire electrode. The mesa structure has a light input end, to which light is to be input from outside, and a light output end, which is on a side of the mesa structure that is opposite of the light input end. A connection position between a center position in a short-side direction of the lead-out wire electrode and the mesa-top electrode is closer to the light output end side in a long-side direction of the mesa-top electrode. The connection position is a position that is less than 50% from the light output end side with respect to a length in the long-side direction of the mesa-top electrode.
1. An electro-absorption modulator, comprising:
a substrate;
a mesa structure, which is provided on a first surface of the substrate, and includes a first conductivity type cladding layer, a multiple quantum well layer, and a second conductivity type cladding layer;
a first conductivity type electrode to be electrically connected to the first conductivity type cladding layer; and
a second conductivity type electrode provided on a second surface of the substrate, wherein:
the first conductivity type electrode includes a mesa-top electrode arranged along a direction in which the mesa structure extends, a pad electrode, to which an electric signal from an outside source is to be input, and a lead-out wire electrode, which connects the mesa-top electrode and the pad electrode,
the mesa structure has a light input end, to which light is to be input from outside, and a light output end, which is on a side of the mesa structure that is opposite of the light input end,
the mesa-top electrode has a first end closer to the light input end than the light output end and a second end closer to the light output end than the light input end,
a connection position between a center position in a short-side direction of the lead-out wire electrode and the mesa-top electrode is closer to the second end of the mesa-top electrode than the first end of the mesa-top electrode,
the connection position is a position that is less than 50% away from the second end of the mesa-top electrode with respect to a length in a long-side direction of the mesa-top electrode.
2. The electro-absorption modulator according to claim 1 , wherein the connection position is a position that is 33% or less from the second end of the mesa-top electrode with respect to the length in the long-side direction of the mesa-top electrode.
3. The electro-absorption modulator according to claim 1 , wherein the connection position is a position that is 20% or less from the second end of the mesa-top electrode with respect to the length in the long-side direction of the mesa-top electrode.
4. The electro-absorption modulator according to claim 1 , wherein the connection position is a position that is 10% or less from the second end of the mesa-top electrode with respect to the length in the long-side direction of the mesa-top electrode.
5. The electro-absorption modulator according to claim 1 , wherein the connection position is an end portion on the second end of the mesa-top electrode.
6. The electro-absorption modulator according to claim 1 , wherein the multiple quantum well layer has a length in a long-side direction of 100 μm or more and 150 μm or less.
7. The electro-absorption modulator according to claim 1 , wherein the lead-out wire electrode is arranged to be perpendicular to the long-side direction of the mesa-top electrode.
8. The electro-absorption modulator according to claim 1 , wherein the lead-out wire electrode is arranged to be inclined to the long-side direction of the mesa-top electrode.
9. The electro-absorption modulator according to claim 1 , wherein the lead-out wire electrode has a shape that is curved toward the first end of the mesa-top electrode.
10. The electro-absorption modulator according to claim 1 , further comprising a buried layer so that the buried layer sandwiches the mesa structure.
11. The electro-absorption modulator according to claim 1 , wherein the mesa structure further includes a contact layer on the first conductivity type cladding layer.