Laser diode and method for manufacturing a laser diode

1. A laser diode comprising:

a surface emitting semiconductor laser configured to emit electromagnetic radiation; and

an optical element arranged downstream of the semiconductor laser in a radiation direction,

wherein the optical element comprises a diffractive structure or a meta-optical structure or a lens structure,

wherein the optical element and the semiconductor laser are cohesively connected to each other,

wherein the semiconductor laser and the optical element are integrated with the laser diode,

wherein the semiconductor laser and the optical element are laterally enclosed by a cladding,

wherein the semiconductor laser and the optical element remain uncovered from the cladding in plan view, and

wherein the cladding is configured to reflect or absorb the electromagnetic radiation.

2. The laser diode according to claim 1 , wherein the optical element is in direct contact with a radiation exit surface of the semiconductor laser facing the optical element.

3. The laser diode according to claim 1 , wherein the optical element and the semiconductor laser are cohesively connected by a connector.

4. The laser diode according to claim 3 , wherein the optical element is formed with a material having the same refractive index as the connector.

5. The laser diode according to claim 1 , wherein the optical element and the semiconductor laser are cohesively connected by a connector, and wherein the connector surrounds the semiconductor laser and the optical element in lateral directions.

6. The laser diode according to claim 1 , wherein a region between the optical element and the semiconductor laser is filled with non-gaseous material.

7. The laser diode according to claim 1 , wherein the optical element does not completely cover a radiation exit surface of the semiconductor laser facing the optical element.

8. The laser diode according to claim 1 , wherein the optical element terminates flush with the semiconductor laser in lateral directions.

9. The laser diode according to claim 1 , wherein the diffractive structure or the meta-optical structure or the lens structure is arranged at a distance from a radiation exit surface of the semiconductor laser facing the optical element.

10. The laser diode according to claim 1 , further comprising an anti-reflection layer exclusively arranged on an outwardly exposed surface of the optical element.

11. The laser diode according to claim 1 , further comprising an electrical contact surface on a surface of the semiconductor laser facing the optical element, wherein the contact surface is not covered by the optical element.

12. The laser diode according to claim 1 , wherein the semiconductor laser comprises electrical contact surfaces exclusively on a side facing away from the optical element.

13. The laser diode according to claim 1 , further comprising:

a mask,

wherein the mask is formed in a vertical direction between the optical element and the semiconductor laser, and

wherein the mask is configured to generate a pictogram.

14. The laser diode according to claim 13 , further comprising:

a spacer,

wherein the spacer is arranged in the vertical direction between the optical element and the semiconductor laser,

wherein the spacer is transparent for the electromagnetic radiation,

wherein the spacer sets a predetermined distance between the mask and the semiconductor laser, and

wherein the semiconductor laser, the spacer and the optical element are cohesively connected to each other.

15. The laser diode according to claim 1 ,

wherein the cladding comprises a material which is radiation-absorbing at least for visible light or for light in an infrared spectral range,

wherein the cladding completely laterally encloses the semiconductor laser and the optical element, and

wherein the cladding partially covers side surfaces of the optical element such that the side surfaces of the optical element remain uncovered by the cladding at least from a vertical height or at least from an upper edge of the diffractive structure, the meta-optical structure or the lens structure.

16. The laser diode according to claim 1 ,

wherein the cladding completely covers side surfaces of the semiconductor laser,

wherein the cladding at least partially covers side surfaces of the optical element,

wherein the semiconductor laser and the optical element are covered in plan view by a cover layer transmissive for the electromagnetic radiation, and

wherein the cover layer adjoins the cladding.

17. The laser diode according to claim 16 ,

wherein the cladding comprises a material not transmissive for the electromagnetic radiation and the cladding is configured to be not transmissive for light in an infrared spectral range, and

wherein a material and a layer thickness of the cover layer are selected such that the cover layer is not transmissive for light in a visible spectral range and transmissive for the light in the infrared spectral range.

18. A laser diode comprising:

a surface emitting semiconductor laser configured to emit electromagnetic radiation; and

an optical element arranged downstream of the semiconductor laser in a radiation direction,

wherein the optical element comprises a diffractive structure or a meta-optical structure or a lens structure,

wherein the optical element and the semiconductor laser are cohesively connected to each other,

wherein the semiconductor laser and the optical element are integrated with the laser diode,

wherein a peak wavelength of the electromagnetic radiation is a wavelength in an infrared spectral range,

wherein the semiconductor laser and the optical element are laterally enclosed by a cladding,

wherein the semiconductor laser and the optical element remain uncovered from the cladding in plan view, and

wherein the cladding is configured to reflect or absorb the electromagnetic radiation.

19. The laser diode according to claim 18

wherein the optical element and the semiconductor laser are cohesively connected by a connector,

wherein the connector surrounds the semiconductor laser and the optical element in lateral directions,

wherein the semiconductor laser and the optical element are covered in plan view by a cover layer transmissive for the electromagnetic radiation, and

wherein a material and a layer thickness of the cover layer are selected such that the cover layer is not transmissive for light in a visible spectral range and transmissive for light in the infrared spectral range.