Fabricating planarized coil layer in contact with magnetoresistance element

1. A method, comprising:

depositing electroconductive material on a substrate to form a coil layer;

forming a coil and a connector from the electroconductive material in the coil layer;

depositing an insulator material between the coil and the connector;

performing planarization on the coil layer to form a planarized coil layer; and

depositing a magnetoresistance (MR) element in direct contact with the connector in the planarized coil layer.

2. The method of claim 1 , further comprising:

depositing a hard mask on the MR element;

depositing a photoresist on the hard mask;

patterning the photoresist using photolithography to expose portions of the hard mask;

etching the exposed portions of the hard mask to expose portions of the MR element;

stripping the photoresist; and

etching the exposed portions of the MR element.

3. The method of claim 2 , further comprising, after etching the exposed portions of the MR element, depositing a capping barrier directly on the hard mask, sidewalls of the MR element and the planarized coil layer.

4. The method of claim 1 , wherein depositing the MR element comprises depositing at least one of a tunneling magnetoresistance (TMR) stack, a magnetic tunnel junction (MTJ) stack and/or a giant magnetoresistance (GMR) stack.

5. The method of claim 1 , further comprising forming vias in the substrate in direct contact with the connector.

6. A method, comprising:

forming a coil and a connector in a coil layer, wherein forming the coil comprises:

depositing an electroconductive material on a substrate;

depositing a first photoresist;

patterning the first photoresist using photolithography to expose portions of the electroconductive material; and

etching the exposed portions of the electroconductive material to form the coil and the connector;

stripping the first photoresist;

performing planarization on the coil layer to form a planarized coil layer;

depositing a magnetoresistance (MR) element directly on the connector in the planarized coil layer;

depositing insulator material on the substrate between the coil and the connector;

etching the insulator material; and

depositing a capping barrier over the MR element and the planarized coil layer.

7. The method of claim 6 , further comprising:

depositing a hard mask on the MR element;

depositing a second photoresist on the hard mask;

patterning the second photoresist using photolithography to expose portions of the hard mask;

etching the exposed portions of the hard mask to expose portions of the MR element;

stripping the second photoresist; and

etching the exposed portions of the MR element.

8. The method of claim 7 , wherein depositing the hard mask comprises depositing the hard mask comprising silicon dioxide.

9. The method of claim 7 , wherein etching the exposed portions of the hard mask comprises using a reactive ion etch process.

10. The method of claim 7 , wherein etching the MR element comprises using a reactive ion beam etching process.

11. The method of claim 7 , wherein depositing the capping barrier comprises depositing a capping barrier comprising silicon nitride.

12. The method of claim 6 , further comprising forming vias in the substrate before depositing the electroconductive material on the substrate.

13. The method of claim 6 , wherein depositing the electroconductive material on the substrate comprises depositing the electroconductive material on a silicon nitride substrate or a silicon dioxide substrate.

14. The method of claim 12 , wherein forming the vias comprises forming vias with tungsten.

15. The method of claim 6 , wherein depositing the electroconductive material comprises depositing titanium nitride.

16. The method of claim 6 , wherein depositing the electroconductive material comprises sputtering the electroconductive material on the substrate.

17. The method of claim 6 , wherein depositing the MR element comprises depositing at least one of a tunneling magnetoresistance (TMR) stack, a magnetic tunnel junction (MTJ) stack and/or a giant magnetoresistance (GMR) stack.

18. The method of claim 6 , wherein depositing the insulator material comprises depositing silicon dioxide.

19. The method of claim 6 , wherein performing planarization on the coil comprises performing chemical mechanical polishing.

20. The method of claim 6 , wherein depositing the insulator material on the coil comprises depositing the insulator material to completely cover the coil.

21. A magnetic field sensor, comprising:

a substrate;

a planarized coil layer comprising a coil and a connector on the substrate;

a magnetoresistance (MR) element in direct contact with the connector in the planarized coil layer; and

a capping layer deposited over the MR element and the planarized coil layer.

22. The magnetic field sensor of claim 21 , wherein the MR element comprises at least one of a tunneling magnetoresistance (TMR) element, a magnetic tunnel junction (MTJ) element and/or a giant magnetoresistance (GMR) element.

23. The magnetic field sensor of claim 21 , further comprising insulator material between portions of the coil.

24. The magnetic field sensor of claim 21 , wherein the substrate includes vias having an electroconductive material.

25. The magnetic field sensor of claim 21 , further comprising a hard mask between the capping layer and the MR element.

26. A magnetic field sensor, comprising:

a substrate;

a planarized coil layer comprising a coil on the substrate;

a magnetoresistance (MR) element in contact with the planarized coil layer, wherein no dielectric material is between the planarized coil layer and the MR element;

a capping layer deposited over the MR element and the planarized coil layer; and

a metal layer,

wherein the MR element is located on a first plane,

wherein the metal layer is on the first plane or on a plane parallel to the first plane, and

wherein the metal layer is configured to generate a magnetic field having a first direction in the MR element that is perpendicular to the first plane in response to a current being applied to the metal layer.

27. The magnetic field sensor of claim 26 , wherein the MR element is a first MR element,

further comprising a second MR element located on the first plane,

wherein the metal layer is configured to generate a magnetic field having a second direction in the second MR element that is perpendicular to the first plane in response to the current being applied to the metal layer, and

wherein the first direction is antiparallel to the second direction.

28. The magnetic field sensor of claim 26 , wherein the MR element is in direct contact with the planarized coil layer.