Visually undistorted thin film electronic devices

1. A thin film semiconductor device, the device comprising:

a stack of thin film material layers deposited onto a substrate, the stack of thin film material layers subdivided into a plurality of semiconductor device cells divided by one or more scribes into an active region and an inactive region, wherein the stack of thin film material layers comprise at least one active semiconductor layer, wherein a first semiconductor device cell of the plurality of semiconductor device cells defines an active region of the thin film semiconductor device, wherein the active region comprises a color characteristic defined by a first optical characteristics spectrum; and

wherein the inactive region is formed on the substrate adjacent to the active region, the inactive region comprising at least one scribe fill material embedded with at least one coloring element, the inactive region having a color characteristic defined by a second optical characteristics spectrum;

wherein the first optical characteristics spectrum and the second optical characteristics spectrum match within a minimum perceptible difference for an industry defined standard observer.

2. The device of claim 1 , wherein the at least one active semiconductor layer comprises an organic photovoltaic semiconductor absorber layer.

3. The device of claim 1 , wherein the second optical characteristics spectrum of the inactive region obtains the first optical characteristics spectrum of the active region within a <5% deviation across the visual light spectrum and <2% deviation for at least one wavelength within the visual light spectrum.

4. The device of claim 1 , wherein the second optical characteristics spectrum of the inactive region obtains the first optical characteristics spectrum of the active region within a ΔE2000<3.

5. The device of claim 1 , wherein the at least one scribe fill material comprises either an electrically insulating material or an electrically conducing material; and

the at least one coloring element comprises either a pigment material or a dye material.

6. The device of claim 1 , wherein the at least one coloring element comprises a sample of a same semiconductor material as comprised in the at least one active semiconductor layer.

7. The device of claim 1 , wherein the substrate is opaque in the visual spectrum.

8. The device of claim 1 , wherein the at least one scribe fill material comprises a ceramic.

9. The device of claim 1 , wherein the inactive region comprises one of:

at least a portion of an electrical monolithic interconnect, or

at least a portion of an edge isolation seal.

10. A method for producing a thin film semiconductor device, the method comprising:

depositing a stack of thin film material layers onto a substrate, the stack of thin film material layers subdivided into a plurality of semiconductor device cells divided by one or more scribes into an active region and an inactive region, wherein the stack of thin film material layers comprise at least one active semiconductor layer, wherein a first semiconductor device cell of the plurality of semiconductor device cells defines an active region of the thin film semiconductor device, wherein the active region comprises a color characteristic defined by a first optical characteristics spectrum; and

forming the inactive region on the substrate adjacent to the active region, the inactive region comprising at least one scribe fill material embedded with at least one coloring element, the inactive region having a color characteristic defined by a second optical characteristics spectrum, wherein the first optical characteristics spectrum and the second optical characteristics spectrum match within a minimum perceptible difference for an industry defined standard observer.

11. The method of claim 10 , further comprising:

applying a post deposition process after forming the inactive region, wherein the post deposition process causes changes to spectral qualities of the at least one scribe fill material to obtain the minimum perceptible difference.

12. The method of claim 10 , wherein the at least one active semiconductor layer comprises an organic photovoltaic semiconductor absorber layer.

13. The method of claim 10 , wherein the second optical characteristics spectrum of the inactive region obtains the first optical characteristics spectrum of the active region within a <5% deviation across the visual light spectrum and <2% deviation for at least one wavelength within the visual light spectrum.

14. The method of claim 10 , wherein the second optical characteristics spectrum of the inactive region obtains the first optical characteristics spectrum of the active region within a ΔE2000<3.

15. The method of claim 10 , wherein the at least one scribe fill material comprises either an electrically insulating material or an electrically conducting material; and

the at least one coloring element comprises either a pigment material or a dye material.

16. The method of claim 10 , wherein the at least one coloring element comprises a sample of a same semiconductor material as comprised in the at least one active semiconductor layer.

17. The method of claim 10 , wherein the substrate is opaque in the visual spectrum.

18. The method of claim 10 , wherein the at least one scribe fill material comprises a ceramic.

19. The method of claim 10 , wherein the inactive region comprises one of:

at least a portion of an electrical monolithic interconnect, or

at least a portion of an edge isolation seal.

20. The method of claim 10 , wherein forming the inactive region includes depositing a scribe fill material ink.