Modified emitter array
An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.
1. A vertical cavity surface emitting laser (VCSEL) array, comprising:
a first set of VCSELs; and
a second set of VCSELs,
wherein the second set of VCSELs includes at least one degraded VCSEL, the at least one degraded VCSEL comprising one or more of:
a central current blocking implant, having an implant width less than a width of an active region of the degraded VCSEL, positioned substantially centrally with respect to a current confinement aperture of the degraded VCSEL,
an etched surface extending around dielectric via openings of the degraded VCSEL and to a depth approximately at a top surface of a top mirror of the degraded VCSEL,
or
a reduced via, etched through a dielectric passivation/mirror layer of the degraded VCSEL to expose a metal layer, the reduced via having a reduced size relative to other vias of the VCSELs in the first set of VCSELs;
wherein the first set of VCSELs and the second set of VCSELs are interleaved with each other to form a two-dimensional regular pattern of VCSELs; and
wherein the second set of VCSELs forms a random pattern of VCSELs within the two-dimensional regular pattern of VCSELs.
2. The VCSEL array of claim 1 , wherein each of the first set of VCSELs has a nominal optical output power at an operating voltage of the VCSEL array; and
wherein each of the second set of VCSELs has substantially less than the nominal optical output power or no optical output power at the operating voltage.
3. The VCSEL array of claim 1 , wherein a bottom mirror of each of the first set of VCSELs includes a distributed Bragg reflector (DBR), and a top mirror of each of the first set of VCSELs includes a DBR.
4. The VCSEL array of claim 1 , wherein the active region of the at least one degraded VCSEL, and other active regions of the first set of VCSELs and the second set of VCSELS, comprise a quantum well.
5. The VCSEL array of claim 1 , wherein the central current blocking implant includes a proton implant.
6. The VCSEL array of claim 1 , wherein active regions of the first set of VCSELs and the second set of VCSELs are positioned between an oxidation layer and a bottom mirror.
7. The VCSEL array of claim 1 , wherein the first set of VCSELs and the second set of VCSELs are electrically connected in parallel.
8. A method of forming a vertical cavity surface emitting laser (VCSEL) array, comprising:
forming a plurality of VCSELs on or within a substrate,
wherein forming the plurality of VCSELs includes forming a first set of VCSELs and a second set of VCSELs that is randomly interleaved with the first set of VCSELS and that form a two-dimensional regular pattern of VCSELs; and
degrading a performance of the second set of VCSELs without degrading a performance of the first set of VCSELs,
wherein degrading the performance of the second set of VCSELs includes forming at least one degraded VCSEL in the second set of VCSELs, the at least one degraded VCSEL comprising one or more of:
a central current blocking implant, having an implant width less than a width of an active region of the degraded VCSEL, positioned substantially centrally with respect to a current confinement aperture of the degraded VCSEL,
an etched surface extending around dielectric via openings of the degraded VCSEL and to a depth approximately at a top surface of a top mirror of the degraded VCSEL,
or
a reduced via, etched through a dielectric passivation/mirror layer of the degraded VCSEL to expose a metal layer, the reduced via having a reduced size relative to other vias of the VCSELs in the first set of VCSELs.
9. The method of claim 8 , wherein each of the first set of VCSELs has a nominal optical output power at an operating voltage; and
wherein each of the second set of VCSELs has substantially less than the nominal optical output power or no optical output power at the operating voltage.
10. The method of claim 8 , wherein a bottom mirror of each of the first set of VCSELs includes a distributed Bragg reflector (DBR), and a top mirror of each of the first set of VCSELs includes a DBR.
11. The method of claim 8 , wherein the active region of the at least one degraded VCSEL, and other active regions of the first set of VCSELs and the second set of VCSELS, comprise a quantum well.
12. The method of claim 8 , wherein the central current blocking implant includes a proton implant.
13. The method of claim 8 , wherein active regions of the first set of VCSELs and the second set of VCSELs are positioned between an oxidation layer and a bottom mirror.
14. The method of claim 8 , wherein the first set of VCSELs and the second set of VCSELs are electrically connected in parallel.
15. An emitter array, comprising:
a first set of emitters; and
a second set of emitters;
wherein the first set of emitters and the second set of emitters are interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light; and
wherein the second set of emitters includes at least one degraded emitter, the at least one degraded emitter comprising one or more of:
a central current blocking implant, having an implant width less than a width of an active region of the degraded emitter, positioned substantially centrally with respect to a current confinement aperture of the degraded emitter,
an etched surface extending around dielectric via openings of the degraded emitter and to a depth approximately at a top surface of a top mirror of the degraded emitter,
or
a reduced via, etched through a dielectric passivation/mirror layer of the degraded emitter to expose a metal layer, the reduced via having a reduced size relative to other vias of the emitters in the first set of emitters.
16. The emitter array of claim 15 , wherein each of the first set of emitters has a nominal optical output power at an operating voltage of the emitter array; and
wherein each of the second set of emitters has substantially less than the nominal optical output power or no optical output power at the operating voltage.
17. The emitter array of claim 15 , wherein the active region of the at least one degraded emitter, and other active regions of the first set of emitters and the second set of emitters, comprise a quantum well.
18. The emitter array of claim 15 , wherein the central current blocking implant includes a proton implant.
19. The emitter array of claim 15 , wherein active regions of the first set of emitters and the second set of emitters are positioned between an oxidation layer and a bottom mirror.
20. The emitter array of claim 15 , wherein the first set of emitters and the second set of emitters are electrically connected in parallel.